Abstract: According to one embodiment, a solid-state imaging device comprises a photoelectric conversion film provided over a semiconductor substrate; a storing electrode provided under part of the photoelectric conversion film; an insulating film provided under the photoelectric conversion film so as to cover a top and a side wall of the storing electrode; a transfer electrode provided between the other part of the photoelectric conversion film and the insulating film; and an upper electrode provided on the photoelectric conversion film.

Abstract: According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.

Abstract: A control apparatus is provided in a rotary electric machine driving system that includes a rotary electric machine for a vehicle and a control unit that controls driving of the rotary electric machine. The apparatus includes a malfunction determination section determining whether or not a system malfunction that requires torque limitation has occurred, a to-be-avoided state determination section determining whether or not the vehicle is in a to-be-avoided state, a torque limitation section limiting an output torque outputted from the rotary electric machine to a limiting torque smaller than a command torque, when the system malfunction is determined to have occurred and the vehicle is not in the to-be-avoided state, and a torque limitation relaxation section permitting the output torque to be a limitation relaxation torque larger than the limiting torque, when the system malfunction is determined to have occurred and the vehicle is in the to-be-avoided state.

Abstract: According to one embodiment, in a solid-state imaging device, a signal storage portion in each of a plurality of pixels includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductive type. The first semiconductor region coveres a side wall of an element isolation portion on a side of the signal storage portion. The second semiconductor region is of a second conductive type. The second conductive type is an opposite conductive type to the first conductive type. The second semiconductor region is arranged vertically in a depth direction from a deeper position than a front surface in a semiconductor substrate and extending in a plate shape along the first semiconductor region.

Abstract: According to one embodiment, a solid-state imaging device includes unit cells including a photoelectric conversion element, a signal detector and the amplifier transistor, respectively; a vertical signal line supplied with a reset signal and a pixel signal of the cell; a first interconnect connected to the signal detectors via a capacitance element; a second interconnect connected between the signal detectors and the amplifier transistors; and a switch element between the vertical signal line and the first interconnects. Unit cells arranged in a column direction is connected to a common vertical line and a common first interconnect.

Abstract: According to one embodiment, a method of manufacturing a back-illuminated solid-state imaging device including forming a mask with apertures corresponding to a pixel pattern on the surface of a semiconductor layer, implanting second-conductivity-type impurity ions into the semiconductor layer from the front side of the layer to form second-conductivity-type photoelectric conversion parts and forming a part where no ion has been implanted into a pixel separation region, forming at the surface of the semiconductor layer a signal scanning circuit for reading light signals obtained at the photoelectric conversion parts after removing the mask, and removing the semiconductor substrate and a buried insulating layer from the semiconductor layer after causing a support substrate to adhere to the front side of the semiconductor layer.

Abstract: According to one embodiment, in a solid-state imaging device, a signal storage portion in each of a plurality of pixels includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductive type. The first semiconductor region coveres a side wall of an element isolation portion on a side of the signal storage portion. The second semiconductor region is of a second conductive type. The second conductive type is an opposite conductive type to the first conductive type. The second semiconductor region is arranged vertically in a depth direction from a deeper position than a front surface in a semiconductor substrate and extending in a plate shape along the first semiconductor region.

Abstract: According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.

Abstract: According to one embodiment, a pixel array unit includes a matrix of first and second two-pixel green photoelectric conversion layers that are arranged obliquely with respect to a column direction, a two-pixel blue photoelectric conversion that is arranged adjacent to the first and second green photoelectric conversion layers, and a red photoelectric conversion layer that overlaps the blue photoelectric conversion layer in a depth direction. A green filter that is provided consecutively for two pixels on the first and second green photoelectric conversion layers, and a magenta filter or a white filter is provided consecutively for two pixels on the blue photoelectric conversion layer.

Abstract: The present disclosure provides a jet-black multilayer coating film having excellent properties in high appearance, water resistance, and humidity resistance and comprising a base coating film and a clear coating film formed by a coating composition containing a plant-derived aliphatic polyester mainly and a method for forming the same. A jet-black multilayer coating film comprising a base coating film layer formed by a base coating composition which contains a polyester polyol (A-1) containing a polyol having three or more functions and lactic acid as a consisting component of 80 mol % or more and having a hydroxyl value of 140 to 240 mgKOH/g wherein 70 mol % or more of the hydroxyl groups are secondary hydroxyl groups, an acrylic resin (A-2) with a hydroxyl value of 30 to 80 mgKOH/g and a glass transition point of 40 to 80° C.

Abstract: According to one embodiment, a solid-state imaging device includes unit cells including a photoelectric conversion element, a signal detector and the amplifier transistor, respectively; a vertical signal line supplied with a reset signal and a pixel signal of the cell; a first interconnect connected to the signal detectors via a capacitance element; a second interconnect connected between the signal detectors and the amplifier transistors; and a switch element between the vertical signal line and the first interconnects. Unit cells arranged in a column direction is connected to a common vertical line and a common first interconnect.

Abstract: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

Abstract: A solid-state imaging device includes a pixel region and a driving circuit region which are disposed on a semiconductor substrate, the pixel region being configured such that a photoelectric conversion unit and a signal scanning circuit unit are included and a matrix of unit pixels is disposed, and the driving circuit region being configured such that a driving circuit for driving the signal scanning circuit unit is disposed, a first pad which is provided on a peripheral region on the semiconductor substrate on a side of a light receiving surface, the light receiving surface being formed on a substrate surface which is opposite to a substrate surface where the signal scanning circuit unit is formed, and a second pad which is provided on a side where the signal scanning circuit unit is formed, and which is disposed only at a position overlapping the pixel region.

Abstract: According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.

Abstract: According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.

Abstract: A throttle passage is formed by providing a step portion by expanding an open end side of a refrigerant passage of the refrigeration cycle, placing a throttle passage member on the step portion, and squashing the throttle passage member using a columnar squashing jig to widen a rim of the outer periphery, thereby causing the throttle passage member to be fixedly engaged to an inner wall of the refrigerant passage. The throttle passage member has a simple shape formed only by machining a circular plate having a hole formed in a center thereof into a truncated conical shape, and therefore can be made at low cost. Throttle passage member is only squashed to be fixedly engaged in the refrigerant passage, and therefore can be easily formed.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel region which is configured such that a photoelectric conversion unit and a signal scanning circuit unit are included in a semiconductor substrate, and a matrix of unit pixels is disposed, and a driving circuit region which is configured such that a device driving circuit for driving the signal scanning circuit unit is disposed on the semiconductor substrate, wherein the photoelectric conversion unit is provided on a back surface side of the semiconductor substrate, which is opposite to a front surface of the semiconductor substrate where the signal scanning circuit unit is formed, and the unit pixel includes an insulation film which is provided in a manner to surround a boundary part with the unit pixel that neighbors and defines a device isolation region.

Abstract: According to one embodiment, a solid-state imaging device includes a semiconductor region, a first diffusion layer, a second diffusion layer, a third diffusion layer, an insulating film, a potential layer, and a read electrode. The semiconductor region includes first and second surfaces. The first diffusion layer is formed in the first surface. The first diffusion layer's concentration is a maximum value in a position at a first depth. The charge accumulation layer has a second depth. The second diffusion layer contacts the first diffusion layer. The third diffusion layer is formed in a position which faces the second diffusion layer in respect to the first diffusion layer. The insulating film is formed on the first surface. The potential layer is formed on the insulating film and has a predetermined potential. The read electrode is formed on the insulating film.

Abstract: There are provided: a bio-based coating composition which is a bio-based ingredient coating composition in consideration of environment and does not need any expensive ingredient and is also excellent in hydrolysis resistance; and an article coated with the coating composition. The bio-based coating composition is characterized by comprising the following film-forming ingredients: a lactic acid polymer (A) which contains a polyfunctional compound having a hydroxyl group and/or a carboxyl group in a functionality of not less than 3 and lactic acid as essential monomer ingredients and has a specific SP value; and a resin (B) which contains a hydroxyl group and/or a carboxyl group and has a specific SP value; wherein the difference (?SP) between the SP values of the lactic acid polymer (A) and the resin (B) is in the range of 0.2 to 4.0. The coated article is characterized by being obtained by being coated with the aforementioned coating composition.

Abstract: The object of the present disclosure is to provide a crosslinked resin fine particle which has a particle diameter small enough to be used suitably for the purpose of viscosity control and can be produced inexpensively. Crosslinked resin fine particles obtained by reacting a vinyl monomer composition comprising: 5 to 50% by weight of a (meth)acrylamide-based monomer (A), 5 to 50% by weight of a crosslinkable unsaturated monomer (B), and 10 to 90% by weight of a (meth)acrylate having an alkyl group containing 8 to 24 carbon atoms (C) in an organic solvent, and having a number average particle diameter of 10 to 250 nm.