Abstract: A method for manufacturing a thin-film transistor that includes a source electrode and a drain electrode at least one of which has a layered structure of a plurality of metal layers including an Al layer and at least one layer made of a metal other than Al and a channel layer made of an oxide semiconductor includes forming a conductive film for the source electrode and the drain electrode, patterning the conductive film to form the source electrode and the drain electrode, forming a passivation film, and conducting heat treatment. The method includes preliminary heat treatment prior to the heat treatment, the preliminary heat treatment being conducted between the patterning of the conductive film and the formation of the passivation film.

Abstract: Provided are an active-matrix substrate having a reliable line connection structure, a method for producing the same, and a display device including the same. A first metal line 122 and a second metal line 125 are electrically connected via an IGZO layer 124 rendered conductive. In this case, the second metal line 125 is isolated from an ITO layer 109 without contacting the ITO layer 109 because there are a passivation layer 107 and an organic insulating film 108 formed between the second metal line 125 and the ITO layer 109. Thus, no contact fault due to electric corrosion occurs between an aluminum layer 125a of the second metal line 125 and the ITO layer 109, whereby a reliable line connection structure is achieved.

Abstract: An organic EL display apparatus includes a substrate, and a pixel circuit provided for each pixel. The pixel circuit includes a first oxide semiconductor TFT having a first oxide semiconductor layer, and a second oxide semiconductor TFT having a second oxide semiconductor layer. The first oxide semiconductor TFT has a top-gate structure. The second oxide semiconductor TFT has a bottom-gate structure. The second oxide semiconductor TFT has a shield electrode that is disposed on an insulating layer disposed on the second oxide semiconductor layer, facing the second oxide semiconductor layer.

Abstract: Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350° C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

Abstract: A wiring delay is prevented or reduced by lowering a wiring resistance without making a wire wider. The present invention includes: a light blocking film (102); a light-transmitting film (106); and a first wiring layer (105A) which serves as part of a wire configured to electrically control an amount of transmitted light for each pixel, the first wiring layer (105A) being provided over the light blocking film (102), and the light-transmitting film (106) being provided over the first wiring layer (105A) so as to cover a side surface of the first wiring layer.

Abstract: Disclosed is an active matrix substrate that includes a plurality of TFTs. The active matrix substrate 11 includes a substrate 100, TFTs, a light transmission film 204, and a protection film Cap4. The TFTs are provided on the substrate 100 so as to correspond to a plurality of pixels, respectively. The light transmission film 204 is provided between the TFTs and the substrate 100. The protection film Cap4 covers an end surface 204b of the light transmission film 204, the end surface 204b being not parallel with the substrate 100. The TFT includes a gate electrode, a gate insulating film, a semiconductor film, a drain electrode, and a source electrode. The protection film Cap4 is arranged between the light transmission film 204 and the semiconductor film of the TFT.

Abstract: An active matrix substrate includes an insulating substrate in which light-transmitting areas and a light-shielding area are formed. The active matrix substrate further includes: a light-shielding film formed in the light-shielding area on the insulating substrate, with a transparent base material containing carbon particles, the light shielding film being colored with the carbon particles; an inorganic film formed on the light-shielding film; light-transmitting films formed in the light-transmitting areas on the insulating substrate, with a transparent base material containing transparent oxidized carbon particles; gate lines provided on the inorganic film; a gate insulating film provided on the gate lines; thin film transistors provided in matrix on the gate insulating film; and data lines provided on the light-shielding film to intersect with the gate lines. The data lines are electrically connected with the thin film transistors.

Abstract: An active matrix substrate 10 includes: an insulating substrate 110; a first conductive film 130 formed on the insulating substrate 110; a light-transmitting film 114 formed on the insulating substrate 110 so that the light-transmitting film 114 covers the first conductive film 130; a second conductive film 140 formed on the light-transmitting film 114; a first insulating layer 115 formed on the light-transmitting film 114 so that the first insulating layer 115 covers the second conductive film 140; a semiconductor film 170 formed on the first insulating layer 115; and a third conductive film 150 formed on the first insulating layer 115 and the semiconductor film 170. The first conductive film 130 and the second conductive film 140 are electrically connected via the third conductive film 150.

Abstract: A display device includes: a translucent substrate; a light-shielding film provided on the translucent substrate; first transparent insulating films that are provided on the translucent substrate so as to cover the covering the light-blocking film; and a plurality of thin film transistors (TFTs) that are provided on the first transparent insulation films and include a portion of lines made of conductive films. The light-shielding film is arranged so as to overlap at least the TFTs, when viewed in a direction vertical to the translucent substrate.

Abstract: An active matrix substrate includes an insulating substrate 100 in which light-transmitting areas and a light-shielding area are formed. The active matrix substrate further includes: a light-shielding film 201 formed in the light-shielding area on the insulating substrate 100, with a transparent base material containing carbon particles, the light shielding film being colored with the carbon particles; an inorganic film 202 formed on the light-shielding film; light-transmitting films 204 formed in the light-transmitting areas on the insulating substrate, with a transparent base material containing transparent oxidized carbon particles; gate lines 111 provided on the inorganic film; a gate insulating film 101 provided on the gate lines; thin film transistors 300 provided in matrix on the gate insulating film; and data lines provided on the light-shielding film to intersect with the gate lines. The data lines are electrically connected with the thin film transistors 300.

Abstract: An active matrix substrate includes an insulating substrate (100); a surface coating film (110) that covers at least a part of a surface of the insulating substrate; an insulating light-transmitting film (204) provided on the insulating substrate including the surface coating film; gate lines; a gate insulating film; thin film transistors; data lines; and lead-out lines (115). In a peripheral portion of the insulating substrate, an area where the insulating light-transmitting film is not provided is formed. The lead-out line is provided so as to intersect with an outer circumference end of the insulating light-transmitting film, when viewed in a direction vertical to the insulating substrate. In the area where the insulating light-transmitting film is not provided, the surface coating film is also provided on a part in contact with the outer circumference end of the insulating light-transmitting film.

Abstract: This semiconductor device is provided with: a semiconductor film that comprises an oxide semiconductor, and includes a channel region; a first inorganic insulating film formed on the semiconductor film; a first organic insulating film formed on the first inorganic insulating film; and an inorganic film group. The inorganic film group has: a first electrode comprising an inorganic conductive film formed on the first organic insulating film; a second inorganic insulating film formed on the first electrode; and a second electrode that comprises an inorganic conductive film formed on the second inorganic insulating film, and is electrically connected to the semiconductor film via openings formed in such a manner as to penetrate the first inorganic insulating film, the first organic insulating film, the first electrode and the second inorganic insulating film. The first organic insulating film is disposed between the first inorganic insulating film and the inorganic film group.

Abstract: A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).

Abstract: A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).

Abstract: A liquid crystal display device, which includes: a liquid crystal layer; and a first substrate and a second substrate that are arranged so as to face each other with the liquid crystal layer being sandwiched therebetween. On the liquid crystal layer side of the first substrate, there are provided: a plurality of first thin film transistors that are arranged in a display region; a peripheral drive circuit which includes a plurality of second thin film transistors and is arranged in the periphery of the display region so as to supply drive signals to the plurality of first thin film transistors; an organic insulating film that is formed so as to cover the plurality of first thin film transistors and the plurality of second thin film transistors; and an inorganic insulating film that is formed on the organic insulating film.

Abstract: A semiconductor device is provided with an oxide semiconductor thin-film transistor (TFT); a calibration electrode that is positioned so as to face an oxide semiconductor layer with an insulating layer therebetween, and, when viewed from the direction of the substrate normal line, overlaps at least part of a gate electrode with the oxide semiconductor layer interposed therebetween; and a calibration voltage setting circuit that determines the voltage to be applied to the calibration electrode. The calibration voltage setting circuit is provided with: a monitor TFT that is configured using a second oxide semiconductor layer, which is substantially the same as the oxide semiconductor layer of the oxide semiconductor TFT; a detection circuit that is configured so as to be able to measure the device characteristics of the monitor TFT; and a voltage determination circuit that determines the voltage to be applied to the calibration electrode on the basis of the measured device characteristics.

Abstract: A semiconductor device includes: a plurality of thin film transistors including a gate electrode, a gate dielectric layer, a semiconductor layer formed on the gate dielectric layer, and a source electrode and a drain electrode provided on the semiconductor layer; a source metal layer including a global line which supplies a common signal to the plurality of thin film transistors, the global line being made of the same electrically conductive film as the source electrode and drain electrode; and a dielectric protection layer covering the plurality of thin film transistors and the source metal layer. The source metal layer includes a lower layer and an upper layer stacked on a portion of the lower layer. The global line has a first layer structure including the lower layer and the upper layer, and at least a portion of each source electrode and of each drain electrode that is located on the semiconductor layer has a second layer structure including the lower layer but not including the upper layer.

Abstract: An array board (a semiconductor device) 11b includes a display area TFT (a display area transistor) 17, a non-display area TFT (a non-display area transistor) 29, an upper insulator 31, and a lower insulator 30. The display area TFT 17 is arranged in a display area AA. The non-display area TFT 29 is arranged in a non-display area NAA. The upper insulator 31 is arranged in the non-display area NAA and formed from a second interlayer insulation film 41. The lower insulator 30 is arranged in the non-display area and formed from a first interlayer insulation film 39. The lower insulator 30 is arranged below the upper insulator 31 such that they are layered.

Abstract: This semiconductor device (101) includes: a substrate (1); a thin-film transistor (10) which includes an oxide semiconductor layer (6) as its active layer; a protective layer (11) covering the thin-film transistor; a metal layer (9d, 9t) interposed between the protective layer (11) and the substrate (1); a transparent conductive layer (13, 13t) formed on the protective layer (11); and a connecting portion (20, 30) to electrically connect the metal layer (9d, 9t) and the transparent conductive layer (13, 13t) together. The connecting portion (20, 30) includes an oxide connecting layer (6a, 6t) which is formed out of a same oxide film as a oxide semiconductor layer (6) and which has a lower electrical resistance than the oxide semiconductor layer (6). The metal layer (9d, 9t) is electrically connected to the transparent conductive layer (13, 13t) via the oxide connecting layer (6a, 6t).

Abstract: Provided is a liquid crystal display panel, including: a circuit substrate and an opposite substrate disposed to face each other; a liquid crystal layer sandwiched between the circuit substrate and the opposite substrate; a display region provided on a surface of the circuit substrate facing the liquid crystal layer and having at least a plurality of pixel electrodes; a peripheral region provided in a periphery of the display region and having at least a plurality of thin film transistors; a first light-shielding layer provided on a side of the opposite substrate so as to shield at least a region corresponding to the peripheral region from light; and a second light-shielding layer provided on a surface of the first substrate on a side opposite to the surface facing the liquid crystal layer so as to shield at least a region corresponding to the peripheral region from light.