Patents by Inventor Hirokazu Sakakibara
Hirokazu Sakakibara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8669042Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: GrantFiled: March 30, 2012Date of Patent: March 11, 2014Assignee: JSR CorporationInventors: Yusuke Anno, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi
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Publication number: 20130337385Abstract: A negative pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The photoresist composition includes a first polymer and an organic solvent. The first polymer includes a first structural unit having an acid-generating capability. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: August 22, 2013Publication date: December 19, 2013Applicant: JSR CORPORATIONInventors: Taiichi FURUKAWA, Koji ITO, Hiromu MIYATA, Hirokazu SAKAKIBARA
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Publication number: 20130323653Abstract: A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value ? of from 5.0 to 30.0. The contrast value ? is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.Type: ApplicationFiled: August 8, 2013Publication date: December 5, 2013Applicant: JSR CORPORATIONInventors: Hirokazu SAKAKIBARA, Hiromu MIYATA, Koji ITO, Taiichi FURUKAWA
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Publication number: 20130316287Abstract: A photoresist composition includes a base polymer, a polymer and an acid generator. The base polymer includes a first structural unit that includes an acid-labile group. The polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the base polymer. The photoresist composition is developed using an organic solvent. The second structural unit is represented by a formula (1) or a formula (2). R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Z1 is a divalent monocyclic hydrocarbon group having 5 or 6 carbon atoms or a divalent polycyclic hydrocarbon group having 7 to 10 carbon atoms. R2 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R3 is an alicyclic hydrocarbon group having 5 to 20 carbon atoms.Type: ApplicationFiled: July 31, 2013Publication date: November 28, 2013Applicant: JSR CORPORATIONInventors: Hirokazu SAKAKIBARA, Hiromu MIYATA, Taiichi FURUKAWA, Koji ITO
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Patent number: 8580482Abstract: A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which includes at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000.Type: GrantFiled: December 28, 2011Date of Patent: November 12, 2013Assignee: JSR CorporationInventors: Takashi Chiba, Toru Kimura, Tomohiro Utaka, Hiroki Nakagawa, Hirokazu Sakakibara, Hiroshi Dougauchi
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Publication number: 20130295506Abstract: A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the is like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.Type: ApplicationFiled: July 11, 2013Publication date: November 7, 2013Inventors: Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Masafumi HORI, Koji ITO, Hiromu MIYATA
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Patent number: 8530146Abstract: A radiation-sensitive resin composition includes an acid-labile group-containing polymer and photoacid generator. The radiation-sensitive resin composition is used to form a resist pattern using a developer that includes an organic solvent in an amount of 80 mass % or more. The radiation-sensitive resin composition has a contrast value ? of 5.0 to 30.0. The contrast value ? is calculated from a resist dissolution contrast curve obtained when developing the radiation-sensitive resin composition using the organic solvent.Type: GrantFiled: January 25, 2012Date of Patent: September 10, 2013Assignee: JSR CorporationInventors: Hirokazu Sakakibara, Hiromu Miyata, Koji Ito, Taiichi Furukawa
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Patent number: 8530692Abstract: A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.Type: GrantFiled: August 23, 2011Date of Patent: September 10, 2013Assignee: JSR CorporationInventors: Nobuji Matsumura, Yuusuke Asano, Hirokazu Sakakibara, Yukio Nishimura, Takehiko Naruoka
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Publication number: 20130230803Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.Type: ApplicationFiled: April 19, 2013Publication date: September 5, 2013Applicant: JSR CorporationInventors: Koji ITO, Hirokazu SAKAKIBARA, Masafumi HORI, Taiichi FURUKAWA
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Publication number: 20130230804Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A? represents —N?—SO2—RD, —COO?, —O? or —SO3?. —SO3? does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation.Type: ApplicationFiled: April 19, 2013Publication date: September 5, 2013Applicant: JSR CorporationInventors: Hirokazu SAKAKIBARA, Masafumi HORI, Taiichi FURUKAWA, Koji ITO
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Publication number: 20120308938Abstract: A pattern-forming method includes forming a resist film on a substrate using a photoresist composition, exposing the resist film, and developing the exposed resist film using a negative developer that includes an organic solvent. The photoresist composition includes (A) a polymer that includes a structural unit (I) including an acid-labile group that dissociates due to an acid, the solubility of the polymer in the developer decreasing upon dissociation of the acid-labile group, and (B) a photoacid generator. The developer includes a nitrogen-containing compound.Type: ApplicationFiled: July 6, 2011Publication date: December 6, 2012Applicant: JSR CorporationInventors: Taiichi FURUKAWA, Hirokazu Sakakibara
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Publication number: 20120202150Abstract: A radiation-sensitive resin composition includes an acid-labile group-containing polymer and photoacid generator. The radiation-sensitive resin composition is used to form a resist pattern using a developer that includes an organic solvent in an amount of 80 mass % or more. The radiation-sensitive resin composition has a contrast value ? of 5.0 to 30.0. The contrast value ? is calculated from a resist dissolution contrast curve obtained when developing the radiation-sensitive resin composition using the organic solvent.Type: ApplicationFiled: January 25, 2012Publication date: August 9, 2012Applicant: JSR CorporationInventors: Hirokazu SAKAKIBARA, Hiromu MIYATA, Koji ITO, Taiichi FURUKAWA
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Publication number: 20120183908Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.Type: ApplicationFiled: March 30, 2012Publication date: July 19, 2012Applicant: JSR CorporationInventors: Yusuke ANNO, Takashi Mori, Hirokazu Sakakibara, Taiichi Furukawa, Kazunori Takanashi, Hiromitsu Tanaka, Shin-ya Minegishi
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Publication number: 20120100480Abstract: A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.Type: ApplicationFiled: August 23, 2011Publication date: April 26, 2012Applicant: JSR CorporationInventors: Nobuji MATSUMURA, Yuusuke Asano, Hirokazu Sakakibara, Yukio Nishimura, Takehiko Naruoka
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Publication number: 20120101205Abstract: A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which includes at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000.Type: ApplicationFiled: December 28, 2011Publication date: April 26, 2012Applicant: JSR CorporationInventors: Takashi CHIBA, Toru KIMURA, Tomohiro UTAKA, Hiroki NAKAGAWA, Hirokazu SAKAKIBARA, Hiroshi DOUGAUCHI
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Publication number: 20120082936Abstract: A radiation-sensitive resin composition includes an acid-labile group-containing resin, and a compound shown by the following general formula (i). R1 represents a hydrogen atom or the like, R2 represents a single bond or the like, R3 represents a linear or branched unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the like, and X+ represents an onium cation.Type: ApplicationFiled: December 15, 2011Publication date: April 5, 2012Applicant: JSR CorporationInventors: Ryuichi Serizawa, Nobuji Matsumura, Hirokazu Sakakibara
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Publication number: 20120070783Abstract: A radiation sensitive resin composition capable of forming a photoresist film which has excellent basic resist performances concerning sensitivity, LWR, development defects, etc., gives a satisfactory pattern shape, has an excellent depth of focus, is reduced in the amount of components dissolving in a liquid for immersion exposure which is in contact with the film during immersion exposure, has a large receding contact angle with the liquid for immersion exposure, and is capable of forming a microfine resist pattern with high accuracy. The radiation sensitive resin composition contains (A) a polymer that comprises a repeating unit represented by formula (1) and a repeating unit having a fluorine atom and has an acid dissociable group in the side chain, and (B) a solvent. [In the formula (1), R1 represents a hydrogen atom, methyl, or trifluoromethyl; and Z represents a group including a structure that generates an acid upon light irradiation.Type: ApplicationFiled: October 21, 2011Publication date: March 22, 2012Applicant: JSR CorporationInventors: Hirokazu SAKAKIBARA, Takehiko NARUOKA
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Publication number: 20120045719Abstract: A radiation-sensitive resin composition includes an acid-dissociable group-containing resin, and a compound shown by the following general formula (1). wherein Z? represents a monovalent anion shown by a general formula (2), M+ represents a monovalent onium cation, R1 represents a linear or branched alkyl group having 1 to 12 carbon atoms substituted or unsubstantiated with a fluorine atom, or a linear or branched alkoxy group having 1 to 12 carbon atoms, and n is 1 or 2.Type: ApplicationFiled: November 4, 2011Publication date: February 23, 2012Applicant: JSR CorporationInventors: Ken Maruyama, Kota Nishino, Kazuki Kasahara, Hirokazu Sakakibara
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Publication number: 20110151378Abstract: A radiation-sensitive resin composition for liquid immersion lithography includes a resin component, a photoacid generator and a solvent. The resin component includes an acid-dissociable group-containing resin in an amount of more than 50% by mass. The acid-dissociable group-containing resin includes a repeating unit that includes a fluorine atom and an acid-dissociable group in a side chain of the repeating unit.Type: ApplicationFiled: November 19, 2010Publication date: June 23, 2011Applicant: JSR CorporationInventors: Nobuji MATSUMURA, Akimasa Soyano, Yuusuke Asano, Takehiko Naruoka, Hirokazu Sakakibara, Makoto Shimizu, Yukio Nishimura
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Publication number: 20110104611Abstract: A compound is shown by a following formula (1), wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents a methylene group, an ethylene group, a 1-methylethylene group, a 2-methylethylene group, a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, or a derivative thereof, each of R3 represents at least one of a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms, a derivative thereof, and a linear or branched alkyl group having 1 to 4 carbon atoms, provided that two of R3 may bond to form a divalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof together with the carbon atom that is bonded thereto, and X represents a linear or branched fluoroalkylene group having 1 to 20 carbon atoms.Type: ApplicationFiled: November 19, 2010Publication date: May 5, 2011Applicant: JSR CorporationInventors: Hirokazu Sakakibara, Takehiko Naruoka, Makoto Shimizu, Yukio Nishimura, Nobuji Matsumura, Yuusuke Asano