Abstract: A radiation-sensitive resin composition includes a solvent and a polymer. The polymer includes a first repeating unit shown by a general formula (1) in which R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, and Z represents a monovalent group that generates an acid upon exposure to radiation.

Abstract: A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which has a recurring unit (I) having a carboxyl group, a recurring unit (II) having a sulfo group and a recurring unit obtained by copolymerizing fluoroalkyl(meth)acrylates having 1 to 20 carbon atoms in a fluoroalkyl group thereof other than a recurring unit having a side chain that includes an alcoholic hydroxyl group having a fluoroalkyl group at least in an ?-position thereof, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000.

Abstract: A radiation-sensitive resin composition includes a polymer, an acid-labile group-containing resin, a radiation-sensitive acid generator, and a solvent, the polymer including repeating units shown by following general formulas (1) and (2). wherein R1 and R2 represent a hydrogen atom, a methyl group, or a trifluoromethyl group, R3 represents a linear or branched alkyl group having 1 to 6 carbon atoms or an alicyclic hydrocarbon group having 4 to 20 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom, or a derivative thereof, and Z represents a group that includes a group that generates an acid upon exposure to light. The radiation-sensitive resin composition produces an excellent pattern shape, reduces the amount of elution into an immersion liquid upon contact during liquid immersion lithography, ensures that a high receding contact angle is formed by a resist film and an immersion liquid, and rarely causes development defects.

Abstract: A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which comprises at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000, wherein at least one of R1 and R2 is a fluoroalkyl group having 1 to 4 carbon atoms and R3 in the formula (2) represents a fluoroalkyl group having 1 to 20 carbon atoms.

Abstract: A radiation-sensitive resin composition includes a resin (A1) that includes a repeating unit shown by the following formula (1-1) and a repeating unit shown by the following formula (1-2), and a radiation-sensitive acid generator (B). The radiation-sensitive resin composition exhibits excellent sensitivity, and can reduce a mask error factor (MEEF). wherein R1, R2, and R3 individually represent a linear or branched alkyl group having 1 to 4 carbon atoms, R4 represents a hydrogen atom, a linear or branched alkyl group having 2 to 4 carbon atoms, a linear or branched fluoroalkyl group having 1 to 4 carbon atoms, or a linear or branched alkoxy group having 1 to 4 carbon atoms, and q represents an integer from 0 to 3.

Abstract: A resin composition for forming a top coat which can be formed on a photoresist film without causing intermixing with the photoresist film, can maintain a stable film coating which is not eluted into a medium during immersion lithography, does not impair pattern profiles during dry exposure (which is not immersion lithography), and can be easily dissolved in an alkaline developer. The resin is a copolymer which comprises at least one recurring unit (I) selected from the group consisting of a recurring unit having a group shown by the following formula (1), a recurring unit having a group shown by the following formula (2), and a recurring unit having a carboxyl group, and a recurring unit (II) having a sulfo group, the copolymer having a weight average molecular weight determined by gel permeation chromatography of 2,000 to 100,000, wherein at least one of R1 and R2 is a fluoroalkyl group having 1 to 4 carbon atoms and R3 in the formula (2) represents a fluoroalkyl group having 1 to 20 carbon atoms.

Abstract: A resin composition which, in forming a fine pattern by a heat treatment of a resist pattern formed by using a photoresist, can be applied onto the resist pattern, can cause the resist pattern to smoothly shrink by heat treatment, and can be easily washed away by a treatment with an alkaline aqueous solution, and a method for efficiently forming a fine resist pattern using the resin composition are provided. The resin composition comprises a resin containing a hydroxyl group, a crosslinking component, and an alcohol solvent containing water in an amount of 10 wt % or less for the total solvent, wherein the alcohol in the alcohol solvent is a monovalent alcohol having 1 to 8 carbon atoms.

Abstract: A radiation-sensitive resin composition which is a resist having properties such as excellent sensitivity, a small degree of line edge roughness of patterns, capability of inhibiting pattern collapsing, and the like is provided. The radiation-sensitive resin composition comprises an acid-dissociable group-containing polymer having recurring units of the following formulas (1-1) and (1-2), an additive of the following formula (1-3), and an acid generator, in the formula (1-1), R1 represents a methyl group and the like and X represents a specific polycyclic alicyclic hydrocarbon group and the like, in the formula (1-2), R1 represents a methyl group and the like and Z represents an acid-dissociable group which is dissociable by the action of an acid, and in the formula (1-3), n is an integer from 1-8 and A individually represents a hydroxyl group and the like.