Abstract: [Problem to be solved] To reduce a loss according to an operating condition of high-frequency use or low-frequency use. [Solution] A trench gate type IGBT includes: a gate trench 120G, which extends from the front surface toward the back surface side of a semiconductor substrate, and causes a current to flow through a channel region formed in the periphery by an applied voltage; a switch trench 120SW, which extends from the front surface toward the back surface side of the semiconductor substrate and has no channel region formed therearound; and a setting terminal for externally controlling the voltage of the switch trench 120SW. A switching between a first state, in which a voltage drop at on-time is relatively small and an energy loss at turn-off time is relatively large, and a second state, in which the voltage drop at on-time is relatively large and the energy loss at turn-off time is relatively small, can be performed, according to a voltage applied to the setting terminal.

Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.

Abstract: [Problem to be solved] To reduce recovery loss. [Solution] A semiconductor device 10 includes: an anode electrode 20, formed on a front surface of a semiconductor substrate 12; a cathode electrode 22, formed on a back surface; a P layer 16, formed on the anode electrode 20 side; an N layer 14, formed on the cathode electrode 22 side; an N+ layer 26, arranged between the P layer 16 and the N layer 14 and having a higher carrier concentration than the N layer 14; and an anode trench 30, which extends from the front surface of the semiconductor substrate 12 toward the back surface side thereof and extends to the N+ layer 26 through the P layer 16, and in which an insulating film 32 is formed between the peripheral N+ layer 26, and a conductive material 34 arranged inside is connected to the anode electrode 20.

Abstract: A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first secon

Abstract: The steel material according to the present disclosure has a chemical composition consisting of, in mass %, C: 0.15 to 0.45%, Si: 0.05 to 1.00%, Mn: 0.01 to 1.00%, P: 0.030% or less, S: 0.0050% or less, Al: 0.005 to 0.100%, Cr 0.60 to 1.80%, Mo: 0.80 to 2.30%, Ti: 0.002 to 0.020%, V: 0.05 to 0.30%, Nb: 0.002 to 0.100%, B: 0.0005 to 0.0040%, Cu: 0.01 to 0.50%, Ni: 0.01 to 0.50%, N: 0.0020 to 0.0100% and O: 0.0020% or less, with the balance being Fe and impurities. The number density of BN in the steel material is 10 to 100 particles/100 ?m2. The yield strength of the steel material is 758 MPa or more.

Abstract: A film formation method comprising: placing a substrate on a substrate table provided in a treatment container, discharging air inside the treatment container to reduce pressure therein; producing plasma by applying a combination of a high-frequency power and a direct-current pulsed voltage to the substrate table while supplying a treatment gas containing a carbon-containing gas into the pressure-reduced treatment container, to form a carbon film on the substrate.

Abstract: A polyacetal resin composition contains a polyacetal copolymer resin (A) in an amount of 100 parts by mass, the polyacetal copolymer resin having a hemiformal terminal group amount of 0.8 mmol/kg or less, a hindered phenol-based antioxidant (B) in an amount of 0.2 to 2.0 parts by mass, at least one of magnesium oxide or zinc oxide (C) in an amount of more than 2.0 parts by mass and 20 parts by mass or less, a carbon-based conductive additive (D) in an amount of 0.3 to 2.5 parts by mass, and polyalkylene glycol (E) in an amount of 0.5 to 3.0 parts by mass, wherein the carbon-based conductive additive (D) is one selected from a group consisting of only a carbon nano-structure (D1) and a combination of the carbon nano-structure (D1) and carbon black (D2) having a BET specific surface area of 300 m2/g or more.

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

Abstract: A trench gate type IGBT includes a plurality of trenches, including a plurality of gate trenches having a gate region inside, and a plurality of emitter trenches having an emitter region connected to an emitter electrode. A mesa section adjacent to the trench has a second mesa region, which does not function as a channel; and a contact, which connects the emitter electrode; the second mesa region being sandwiched between the gate trench and the emitter trench.

Abstract: The present invention provides a cationic electrodeposition coating composition that has both good anti-cissing property and good coating film appearance. This is a cationic electrodeposition coating composition containing a silicone compound (A) having an SP value of more than 10.5 and 15.0 or less, and a film forming resin (B), wherein the silicone compound (A) is contained in an amount of 0.01 parts by mass or more and 4.5 parts by mass or less per 100 parts by mass of the resin solid content of the film forming resin (B). For example, the silicone compound (A) is at least one species selected from the group consisting of a polyether modified silicone compound (A-1), a polyester modified silicone compound (A-2), and a polyacrylic modified silicone compound (A-3).

Abstract: The present invention provides a cationic electrodeposition coating composition that has both good anti-cissing property and good coating film appearance. This is a cationic electrodeposition coating composition containing a silicone compound (A) having an SP value of more than 10.5 and 15.0 or less, and a film forming resin (B), wherein the silicone compound (A) is contained in an amount of 0.01 parts by mass or more and 4.5 parts by mass or less per 100 parts by mass of the resin solid content of the film forming resin (B). For example, the silicone compound (A) is at least one species selected from the group consisting of a polyether modified silicone compound (A-1), a polyester modified silicone compound (A-2), and a polyacrylic modified silicone compound (A-3).

Abstract: A substrate processing method includes forming a carbon film on a substrate by plasma CVD using a processing gas including a carbon-containing gas; and performing a plasma post-processing on the formed carbon film, thereby reducing film stress of the carbon film by plasma of the processing gas including helium gas or a mixture of helium gas and argon gas but not including hydrogen.

Abstract: A polyacetal resin composition contains a polyacetal copolymer (A) in an amount of 100 parts by mass, the polyacetal copolymer resin having a hemiformal terminal group amount of 0.8 mmol/kg or less, an antioxidant (B) in an amount of 0.5 to 3.0 parts by mass, at least one of zinc oxide or magnesium oxide (C) having an average particle diameter of 5 ?m or less in an amount of more than 2.0 parts by mass and 12 parts by mass or less, carbon black (D) having a BET specific surface area of 300 to 400 m2/g in an amount of 5.0 to 16 parts by mass, and polyalkylene glycol (E) in an amount of 0.5 to 3.0 parts by mass.

Abstract: A polyacetal resin composition contains a polyacetal copolymer (A) in an amount of 100 parts by mass, the polyacetal copolymer resin having a hemiformal terminal group amount of 0.8 mmol/kg or less, an antioxidant (B) in an amount of 0.5 to 3.0 parts by mass, at least one of zinc oxide or magnesium oxide (C) having an average particle diameter of 5 ?m or less in an amount of more than 2.0 parts by mass and 12 parts by mass or less, carbon black (D) having a BET specific surface area of 300 to 400 m2/g in an amount of 5.0 to 16 parts by mass, and polyalkylene glycol (E) in an amount of 0.5 to 3.0 parts by mass.

Abstract: A polyacetal resin composition contains a polyacetal copolymer resin (A) in an amount of 100 parts by mass, the polyacetal copolymer resin having a hemiformal terminal group amount of 0.8 mmol/kg or less, a hindered phenol-based antioxidant (B) in an amount of 0.2 to 2.0 parts by mass, at least one of magnesium oxide or zinc oxide (C) in an amount of more than 2.0 parts by mass and 20 parts by mass or less, a carbon-based conductive additive (D) in an amount of 0.3 to 2.5 parts by mass, and polyalkylene glycol (E) in an amount of 0.5 to 3.0 parts by mass, wherein the carbon-based conductive additive (D) is one selected from a group consisting of only a carbon nano-structure (D1) and a combination of the carbon nano-structure (D1) and carbon black (D2) having a BET specific surface area of 300 m2/g or more.

Abstract: A polyacetal resin composition that allows molded articles to be inhibited from being deteriorated by contact with acidic detergents, and in which the portions that have contacted the detergents are inhibited from being deteriorated by light. The polyacetal resin composition includes 100 parts by mass of a polyacetal polymer, 0.1-2.0 parts by mass of a hindered-phenol-based antioxidant, 2.0-20 parts, excluding 2.0 parts, by mass of at least one of magnesium oxide and zinc oxide,0.5-3.0 parts by mass of a polyalkylene glycol, 0.2-1.5 parts by mass of a hindered amine compound, and 0.2-1.5 parts by mass of an ultraviolet absorber.

Abstract: A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.

Abstract: Disclosed herein is a resin composition including an ethylene-acrylic acid alkyl ester copolymer (L), a graft copolymer (M), and a styrene-based elastomer (N), wherein the graft copolymer (M) is obtained by a reaction among an ethylene-acrylic acid alkyl ester copolymer (A), a monomer component (B) containing at last one monomer selected from the group consisting of a (meth)acrylic acid alkyl ester monomer and an aromatic vinyl monomer, and t-butyl peroxymethacryloyloxyethyl carbonate (C), and a weight ratio between the ethylene-acrylic acid alkyl ester copolymer (A) and the monomer component (B) ((A)/(B)) is 50/50 to 98/2. The resin composition is capable of reducing squeaking noises generated by contact between a thermoplastic resin molded body and leather.

Abstract: An object of the present invention is to demonstrate the existence of a heterodimer of somatostatin receptor subtype 1 (SSTR1) and somatostatin receptor subtype 4 (SSTR4) and also to provide a method for screening a factor that binds to such a heterodimer and the heterodimer that can be used in the screening method. A transformant expressing a heterodimer of somatostatin receptor subtype 1 and somatostatin receptor subtype 4, into which DNA encoding somatostatin receptor subtype 1 and DNA encoding somatostatin receptor subtype 4 have been introduced. A method for screening a compound that interacts with a heterodimer of somatostatin receptor subtype 1 and somatostatin receptor subtype 4, comprising selecting the compound that interacts with the heterodimer from test compounds.

Abstract: Underpants-type disposable wearing articles are provided wherein transverse tearing is hard to develop at a stacked sheet number change part in the outer member. This problem is solved by an underpants-type disposable wearing article, in which cuts 61 each extending longitudinally across a stacked sheet number change part 62 where the number of stacked sheets constituting the outer member 20 varies are formed adjacent on the central side in the width direction of a side seal 21 formed by joining the front and body sections together along the opposed lateral portions, and which is free of a perforated line formed from the waist opening toward the leg opening.