Abstract: A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.

Abstract: An electromagnetic block and a movable block are attached onto a base in an inclination attitude. Contact mechanisms press-fitted from above the base are laterally arranged in the inclination attitude, and the contact mechanisms are arranged in parallel in upper and lower stages. Idle end portions of movable contact pieces in the contact mechanisms are latched in a card which is linearly moved in a lateral direction. Terminals are projected downward from a bottom surface of the base, one of the terminals is connected to the fixed contact pieces of the contact mechanism, and the other terminal is connected to the movable contact pieces of the contact mechanism. The upper contact mechanism and the lower contact mechanism are alternately arranged in the lateral direction.

Abstract: The present invention provides a reinforcing bar material coated with a high adhesion anticorrosion film that enables to increase adhesion strength to concrete, which comprises forming two layers of anticorrosion films on a surface of a reinforcing bar material by means of spraying an epoxy powder coating material under a temperature condition where performance of the epoxy resin can be retained, so as to solve a pin hole problem that inevitably occurs in an anticorrosion film, and also to exhibit firm projections in a state coated with the epoxy resin on the second layer of anticorrosion film. The present invention comprises heating a reinforcing bar material, spraying and melt-adhering an epoxy powder coating material onto the reinforcing bar material while a temperature on a surface of the reinforcing bar material is between 200 and 250° C.

Abstract: The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.

Abstract: A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

Abstract: In the information processing device of the invention, the region to be scanned is divided and assigned into as many parts as there are CPUs installed in the information processing device, each CPU scans hardware resources under its control respectively, and the main CPU integrates the scanning result at the end. According to the invention, the time necessary to scan the hardware resource can be reduced, and the startup time of the information processing device can also be reduced.

Abstract: An electromagnetic block and a movable block are attached onto a base in an inclination attitude. Contact mechanisms press-fitted from above the base are laterally arranged in the inclination attitude, and the contact mechanisms are arranged in parallel in upper and lower stages. Idle end portions of movable contact pieces in the contact mechanisms are latched in a card which is linearly moved in a lateral direction. Terminals are projected downward from a bottom surface of the base, one of the terminals is connected to the fixed contact pieces of the contact mechanism, and the other terminal is connected to the movable contact pieces of the contact mechanism. The upper contact mechanism and the lower contact mechanism are alternately arranged in the lateral direction.

Abstract: In a method of forming a fine pattern, a silicon-oxide-based film is formed directly or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based film is formed such that nitrogen content of the surface thereof assumes a value of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified photoresist layer upon exposure through the mask. Thus, there is prevented generation of a tapered corner in a portion of a resist pattern in the vicinity of a boundary area between the resist pattern and a substrate.

Abstract: A shower plate 122 has protrusions 22 formed on the front face used with a first electrode in a plasma CVD apparatus. A plane-surface portion 23 is left around apertures of gas inlet holes 21 formed in the shower plate 122. With protrusions 22 being formed, a surface area of the first electrode is increased.

Abstract: A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

Abstract: A plasma treatment apparatus for thin-film deposition includes a reactor chamber; a pair of parallel-plate electrodes disposed inside the chamber; and a radio-frequency power supply system used for transmitting radio-frequency power to one of the parallel-plate electrodes via multiple supply points provided on the one of the parallel-electrodes. The radio-frequency power supply system includes a radio-frequency transmission unit which includes an inlet transmission path and multiple branches branched off from the inlet transmission path multiple times. Each branch is connected to the supply point and has a substantially equal characteristic impedance value.

Abstract: A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.

Abstract: There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.

Abstract: In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

Abstract: A substrate-supporting apparatus, wherein a substrate is not warped or distorted and a film with uniform thickness is formed, is a semiconductor substrate-supporting apparatus which supports and heats semiconductor substrates inside a vacuum-pumped reaction chamber. On the substrate-supporting surface of the semiconductor substrate-supporting apparatus, a concave portion which includes a depression slanting from the peripheral portion to the center is provided, the semiconductor substrate is supported in a position where the peripheral portion of the back surface of the substrate contacts the slanting surface of the concave portion, and the concave portion is formed so that an interval between the center of the concave portion and the semiconductor substrate becomes the designated distance. The slanting surface of the concave portion may include a portion of a spherical surface or a conical surface.

Abstract: A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH4) and a nitrogen gas (N2) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.

Abstract: In a plasma CVD apparatus including a reaction chamber and a susceptor to form a thin film on a semiconductor substrate, a pretreatment step is conducted to form a surface layer on the surface of the susceptor so that the surface layer can prevent the semiconductor substrate from electrostatically adhering to the surface of the susceptor. The pretreatment step includes steps of introducing into the reaction chamber a gas containing, e.g., the same gas as the gas for use in a film-forming treatment, and forming a surface layer on the susceptor surface by a CVD process.

Abstract: A thin film is formed on a substrate in a film-forming apparatus which has upper and lower electrodes between which radio-frequency power is applied in a processing chamber, and a heater is used to heat the lower electrode on which the substrate is loaded. In one lot, at least one substrate is processed. The electrode is heated at the end of a stand-by period between lots and before starting the film-forming process.