Patents by Inventor Hiroki Murakami

Hiroki Murakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190190056
    Abstract: A nonaqueous electrolyte secondary battery in accordance with an embodiment of the present invention includes: a separator including a polyolefin porous film; a porous layer containing a polyvinylidene fluoride-based resin; and a positive electrode plate and a negative electrode plate each of which has a capacitance in a specific range, the polyolefin porous film having a parameter X of not more than 20, and the polyvinylidene fluoride-based resin containing not less than 35.0 mol % of an ?-form polyvinylidene fluoride-based resin.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 20, 2019
    Inventors: Ichiro ARISE, Toshihiko OGATA, Chikara MURAKAMI, Hiroki HASHIWAKI
  • Publication number: 20190190076
    Abstract: A nonaqueous electrolyte secondary battery in accordance with an embodiment of the present invention includes: a separator including a polyolefin porous film having a parameter X of not more than 20; a porous layer containing a polyvinylidene fluoride-based resin in which a content of an ?-form polyvinylidene fluoride-based resin is not less than 35.0 mol %; a positive electrode plate, a bend number of which being not less than 130, the bend number indicating how many times the positive electrode plate bends before peeling of a positive electrode active material layer occurs; and a negative electrode plate, a bend number of which being not less than 1650, the bend number indicating how many times the negative electrode plate bends before peeling of a negative electrode active material layer occurs.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 20, 2019
    Inventors: Kosuke KURAKANE, Toshihiko OGATA, Chikara MURAKAMI, Hiroki HASHIWAKI
  • Publication number: 20190190078
    Abstract: The present invention provides a nonaqueous electrolyte secondary battery in which degradation of electrode plates after charge-discharge cycles is prevented. The nonaqueous electrolyte secondary battery in accordance with an aspect of the present invention includes: (i) a combination of a positive electrode plate and a negative electrode plate in which the sum of interface barrier energies is not less than a predetermined value, (ii) a nonaqueous electrolyte secondary battery separator that includes a porous film whose parameter X falls within a predetermined range, the parameter X being calculated from a tan ? which is obtained through a viscoelasticity measurement, and (iii) a porous layer that contains an ?-form polyvinylidene fluoride-based resin of a polyvinylidene fluoride-based resin at a predetermined proportion. The porous layer is provided between the nonaqueous electrolyte secondary battery separator and at least one of the positive electrode plate and the negative electrode plate.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 20, 2019
    Inventors: Ichiro ARISE, Toshihiko OGATA, Chikara MURAKAMI, Hiroki HASHIWAKI
  • Patent number: 10323027
    Abstract: The present invention provides a compound having a cholinergic muscarinic M1 receptor positive allosteric modulator activity, which may be useful as a prophylactic or therapeutic drug for Alzheimer's disease, schizophrenia, pain, sleep disorder, Parkinson's disease dementia, dementia with Lewy bodies and the like. The present invention relates to a compound represented by the formula (I) or a salt thereof: wherein each symbol is as defined in the attached DESCRIPTION.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: June 18, 2019
    Assignee: Takeda Pharmaceutical Company Limited
    Inventors: Takahiro Sugimoto, Shinkichi Suzuki, Hiroki Sakamoto, Masami Yamada, Minoru Nakamura, Makoto Kamata, Kenichiro Shimokawa, Masataka Murakami, Jinichi Yonemori, Takuto Kojima
  • Publication number: 20190172710
    Abstract: A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.
    Type: Application
    Filed: February 7, 2019
    Publication date: June 6, 2019
    Inventor: Hiroki MURAKAMI
  • Patent number: 10312078
    Abstract: There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: June 4, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroki Murakami, Daisuke Suzuki, Takahiro Miyahara
  • Publication number: 20190162339
    Abstract: A metal seal can be crushed evenly without forming wrinkles and scratches due to sliding against first and second flat surfaces. The seal comprises a first/second end surface arranged to face the first/second flat surface, respectively. The first end surface comprises a first convex part having a curved or flat surface that contacts the first flat surface, and a first projection that is formed shifted in a radial direction from the first convex part and has a ridge line that contacts the first flat surface. Prior to deformation, when the second end surface contacts the second flat surface and the first flat surface is separated from the first end surface, a point where a vertical distance between the first convex part and the second flat surface is the greatest and the ridge line are located on the same surface that is parallel to the first flat surface.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 30, 2019
    Inventors: Makoto Uemura, Hiroki Miyaji, Keiichi Murakami
  • Patent number: 10304676
    Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: May 28, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takahiro Miyahara, Daisuke Suzuki, Hiroki Murakami
  • Publication number: 20190156899
    Abstract: A semiconductor storage device with a smaller chip size than prior art and a readout method are provided. The semiconductor storage device includes a memory cell array; a page buffer/sense circuit having a sensing node for sensing readout data from a selected page of the memory cell array and a latch circuit for holding data sensed by the sensing node; and a controller controls operations on the memory cell array. The sensing node includes an NMOS capacitor.
    Type: Application
    Filed: November 15, 2018
    Publication date: May 23, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Kazuki Yamauchi, Makoto Senoo, Hiroki Murakami
  • Patent number: 10297295
    Abstract: A semiconductor memory device which is capable of high-speed operation in synchronization with external control signals is provided. The semiconductor memory device has a data input portion, a memory array, a data output portion, and a control portion. The data input portion receives command and address input data in response to the external control signals. The memory array has a plurality of memory elements. The data output portion outputs data read from the memory array in response to the external control signals. The control portion has the function of delay-compensation. During the time interval for receiving the input data, the function of delay-compensation estimates the delay time of the internal circuits, stores the estimated delay-time in a memory unit, and adjusts the output timing of the data output portion.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: May 21, 2019
    Assignee: WINBOND ELECTRONICS CORP.
    Inventors: Hiroki Murakami, Makoto Senoo
  • Patent number: 10269561
    Abstract: A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: April 23, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hiroki Murakami
  • Patent number: 10269409
    Abstract: A non-volatile semiconductor memory device and a driving method for word lines thereof are provided. A flash memory of the invention includes a memory cell array including blocks and a block selection element selecting the block of the memory cell array based on row address information and including a block selection transistor, a level shifter, a boost circuit and a voltage supplying element. The block selection transistor is connected to each word line of the block. The level shifter supplies a voltage to a node connected to a gate of the block selection transistor. The boost circuit boosts a potential of the node. The voltage supplying element supplies an operation voltage to one of the terminals of the block selection transistor. The node, after performing first boosting by the operating voltage supplied by the supplying element, performs second boosting by the second circuit.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: April 23, 2019
    Assignee: Winbond Electronics Corp.
    Inventor: Hiroki Murakami
  • Publication number: 20190115204
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: December 11, 2018
    Publication date: April 18, 2019
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Publication number: 20190096750
    Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.
    Type: Application
    Filed: September 27, 2018
    Publication date: March 28, 2019
    Inventors: Yumiko KAWANO, Shuji AZUMO, Hiroki MURAKAMI, Michitaka AITA, Tadahiro ISHIZAKA, Koji AKIYAMA, Yusaku KASHIWAGI, Hajime NAKABAYASHI
  • Publication number: 20190096658
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: November 28, 2018
    Publication date: March 28, 2019
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Patent number: 10240837
    Abstract: An outdoor unit includes at least a compressor, a gas-liquid separator, and an outdoor heat exchanger of a refrigerant circuit, the refrigerant circuit being formed by connecting, by pipes, the compressor, a condenser, a pressure reducing device, the gas-liquid separator, and the outdoor heat exchanger that acts as an evaporator including at least a plurality of heat transfer tubes and an inlet header that distributes incoming refrigerant to the heat transfer tubes. The outdoor unit further includes a gas-liquid-separator bypass pipe, a gas-liquid-separator-side flow control valve, a header bypass pipe, a header-side flow control valve, and a determination device.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: March 26, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yoji Onaka, Takashi Matsumoto, Mizuo Sakai, Hiroki Murakami, Hiroaki Nakamune
  • Publication number: 20190047611
    Abstract: A power steering apparatus according to the present invention comprises: a steering mechanism having a steering shaft and a rack bar which steers steer steerable wheels by a movement in an axial direction of the rack bar in association with a rotation of steering shaft; an electrically driven motor having a stator, a rotor, and a drive shaft integrally rotated with the rotor; a worm gear transmitting the rotation of the drive shaft to the steering mechanism; a housing member having a reduction gear housing section, a rack bar housing section, and a motor ECU housing section in which the electrically driven motor and the control circuit are housed; and a moisture detection sensor having a moisture detection section disposed within the reduction gear housing section and a transmission section connected with the control circuit passing through an inner part of the motor ECU housing from the moisture detection section.
    Type: Application
    Filed: January 20, 2017
    Publication date: February 14, 2019
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Hiroki MURAKAMI, Kohtaro SHIINO
  • Publication number: 20190041756
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Application
    Filed: October 11, 2018
    Publication date: February 7, 2019
    Inventors: Kazuhide HASEBE, Shigeru NAKAJIMA, Jun OGAWA, Hiroki MURAKAMI
  • Patent number: 10191378
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: January 29, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhide Hasebe, Shigeru Nakajima, Jun Ogawa, Hiroki Murakami
  • Patent number: 10176992
    Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
    Type: Grant
    Filed: March 22, 2013
    Date of Patent: January 8, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhide Hasebe, Shigeru Nakajima, Jun Ogawa, Hiroki Murakami