Abstract: A vehicle loads at least one of a plurality of upper units having space to store a person or an object on an under unit including a drive mechanism that rotates wheels in the vehicle. The vehicle includes an under unit including a drive mechanism that rotates wheels and the at least one of the plurality of upper units loaded on the under unit. The under unit includes a loading unit, on which the at least one of the plurality of upper units as described above can be loaded. Each of the plurality of upper units includes a joint that joins to a different upper unit that is adjacently loaded.

Abstract: A numerical controller includes a reading analysis unit that reads a CNC program and additional information, a path generation unit that determines a movement path of a tool, and a velocity control unit that determines a velocity for moving the tool according to the movement path of the tool, and machining errors, deterioration of a machined surface quality, or an increase in a cycle time are reduced without increasing a CNC program size and a calculation time associated with control more than necessary.

Abstract: A liquid ejecting head supported by a support body includes: a first head chip; a holder having a holding portion holding the first head chip and a flange portion; and a heater heating the holding portion, in which the holding portion has a heat receiving portion receiving heat from the heater, and a shortest path of heat transferred through the holder from the heat receiving portion to the flange portion is bent or curved at two or more points.

Abstract: A liquid ejecting head includes: head chips including a first-head-chip and a second-head-chip; a holder holding the head chips; and a heater along a direction parallel to a nozzle surface. The first-head-chip and the second-head-chip are disposed to be offset from each other in both a first-direction and a second-direction parallel to the nozzle surface and intersecting with each other. When a first-side is one of the four sides of a virtual rectangle circumscribing the aggregate of the head chips and a second-side and a third-side are coupled to both ends of the first-side, the first-head-chip is in contact with the first-side and the third-side and the second-head chip is in contact with the second-side. The heater overlaps the head chips. A first-region surrounded by the first-side, the second-side, the first-head-chip, and the second-head-chip includes a first-outside-part positioned outside the outer edge of the heater.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A film forming method includes: preparing a substrate having a surface on which a first film containing boron and a second film made of a material different from that of the first film are formed; supplying a raw material gas, which contains halogen and an element X other than halogen, to the surface of the substrate; and supplying a plasmarized reaction gas, which contains oxygen, to the surface of the substrate, wherein a third film as an oxide film of the element X is selectively formed on the second film with respect to the first film by alternately supplying the raw material gas and the plasmarized reaction gas.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract: A substrate processing method includes: a catalyst component supplying process of supplying a catalyst component, which is to be adsorbed on a substrate, to the substrate; a film-forming component supplying process of supplying a film-forming component, which forms an insulating film on the substrate in the presence of the catalyst component, to the substrate; and an inhibition component supplying process of supplying an inhibition component, which is to be adsorbed on the substrate and inhibits adsorption of the catalyst component on the substrate, to a front surface or a back surface of the substrate, wherein the inhibition component supplying process is performed before the catalyst component supplying process.

Abstract: A teaching control method includes displaying three or more plurality of teaching points on a display section, acquiring a result of classification processing for classifying the plurality of teaching points into one or more teaching point groups, receiving an operation parameter for each teaching point group, and setting an operation value for each teaching point group using the operation parameter.

Abstract: A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound.

Abstract: A substrate processing method includes: preparing a substrate having a recess and a first film embedded in the recess; and removing the first film by etching while forming a second film so as to cover the recess from which the first film was removed by supplying a processing gas to the substrate, the processing gas including a gas contributing to film formation and a gas contributing to the etching.

Abstract: A substrate processing method of etching a SiN film formed on the substrate includes supplying a HF gas at a processing temperature of 450 degrees C. or higher to etch the SiN film.

Abstract: A film forming method includes: preparing a substrate having a surface on which a first film containing boron and a second film made of a material different from that of the first film are formed; supplying a raw material gas, which contains halogen and an element X other than halogen, to the surface of the substrate; and supplying a plasmarized reaction gas, which contains oxygen, to the surface of the substrate, wherein a third film as an oxide film of the element X is selectively formed on the second film with respect to the first film by alternately supplying the raw material gas and the plasmarized reaction gas.

Abstract: A substrate processing method of etching an etching target film formed on a substrate includes: preparing the substrate having the etching target film; and etching the etching target film, wherein the etching the etching target film includes repeating, a plurality of times, supplying an etchant gas, and plasma-exciting a reaction gas to expose the substrate to plasma of the reaction gas.

Abstract: Provided is a numerical control device for improving cycle time and machined surface quality.

Abstract: Disclosed is a voltage generating circuit including a reference voltage generating part, a leakage current monitoring part, a control part, and an internal voltage generating part. The reference voltage generating part generates a reference voltage. The leakage current monitoring part generates a monitoring leakage current corresponding to a leakage current of an internal circuit of a semiconductor device. The control part controls the reference voltage according to the monitoring leakage current. The internal voltage generating part receives the reference voltage being controlled by the control part, and supplies an internal voltage to the internal circuit according to the controlled reference voltage. A semiconductor device including the same is also disclosed.

Abstract: An object of the present invention is to provide a composition for promoting sleep, that enables an increase of the sleep amounts in the overall night and in the initial stage of the night, a decrease of the sleep onset latent time, and an increase of the length of a sleep episode, and that is excellent in the stability and the safety. Another object of the present invention is to provide a food, a drug, and a feed that each include the composition for promoting sleep. The composition for promoting sleep is characterized in that the composition for promoting sleep includes a microorganism belonging to either Bifidobacterium adolescentis or Lactobacillus plantarum, or a culture thereof as an active ingredient.

Abstract: A rotor includes: a plurality of permanent magnets divided at regular intervals in a circumferential direction around a shaft, and provided in an axial direction; a first protection ring for positioning and holding ends in the axial direction of the permanent magnets; a second protection ring for positioning and holding other ends in the axial direction of the permanent magnets; and a protection cover covering outer circumferential surfaces of the permanent magnets, the first protection ring, and the second protection ring, and having a uniform thickness in a radial direction.

Abstract: To smoothen a machining route more appropriately. A numerical controller of the present invention comprises: a machining program look-ahead unit that acquires a program for machining; a command route mathematization unit that expresses a machining route as a parametric line segment or curve on the basis of the program for the machining; and a smoothing processing unit that sets a range of smoothing for a target point of the smoothing along the parametric line segment or curve in an optional range from the target point, and performs the smoothing on the target point on the basis of the set range of the smoothing. The range of the smoothing set by the smoothing processing unit is a range in which a deviation between before the smoothing and after the smoothing on the target point is a set threshold or less.

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.