Abstract: A liquid blow molding method of molding a preform into a liquid-containing container includes: a first nozzle descending step of descending a blow nozzle to a first position at which the blow nozzle does not seal the mouth part; a gas-liquid replacement step of supplying a liquid into the preform from the blow nozzle at the first position and discharging air inside the preform to outside; a second nozzle descending step of descending the blow nozzle to a second position at which the blow nozzle seals the mouth part, after the gas-liquid replacement step; and a blow molding step of supplying the liquid into the preform from the blow nozzle at the second position to blow mold the preform into the predetermined shape.

Abstract: A selective growth method of selectively growing a thin film on an underlayer, on which an insulating film and a conductive film are exposed, includes: preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed; and selectively growing a silicon-based insulating film on the insulating film by repeating a plurality of times a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film and a second step of supplying a reaction gas for reacting with the adsorbed aminosilane-based gas to form the silicon-based insulating film, wherein the conductive film is vaporized by reaction with the reaction gas so that the conductive film is reduced in thickness.

Abstract: Provided is a torque sensor and an electric power steering system, which are capable of suppressing a detection property fluctuation between two magnetic sensors. A retaining portion is disposed at first and second magnetism collecting members in such a position as to be magnetically symmetrical with respect to first and second magnetic sensors.

Abstract: A semiconductor storage device with a smaller chip size than prior art and a readout method are provided. The semiconductor storage device includes a memory cell array; a page buffer/sense circuit having a sensing node for sensing readout data from a selected page of the memory cell array and a latch circuit for holding data sensed by the sensing node; and a controller controls operations on the memory cell array. The sensing node includes an NMOS capacitor.

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes a maintaining circuit, a sensing circuit, an output circuit, and a verification circuit. The maintaining circuit is configured to maintain data read from a memory cell array and output the data to a data bus in response to a column selection signal. The sensing circuit is configured to sense the data on the data bus in response to at least one sensing enable signal. The output circuit is configured to output the data sensed by the sensing circuit. The verification circuit is configured to verify an operation margin of the sensing circuit and output a verification result. The timing of the at least one sensing enable signal is set according to the verification result of the verification circuit.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: A compressor includes a container provided with an oil reservoir which is provided at a bottom portion of the container to allow oil to be collected in the oil reservoir. The container is provided such that a rotary shaft is inclined relative to the direction of gravity or to be laid horizontal. In the container, an electric motor mechanism, the rotary shaft, a compression mechanism and a frame which fixes the compression mechanism to the container are provided. To the container, a suction pipe is connected to cause refrigerant to flow into space between the frame and the electric motor mechanism. In the frame, a suction port is formed to cause the refrigerant having flowed into the space to flow into the compression mechanism, and each of the suction portion and a connection port of the suction pipe, which connects with the container is located at a position which is higher than or the same as the level of the rotary shaft as seen in a rotation axial direction.

Abstract: There is provided heating method for heating a substrate having a germanium film or a silicon germanium film formed on a surface of the substrate, the method including: loading the substrate kept in an air atmosphere at least a predetermined time into a processing container; and heating the substrate in a state in which an interior of the processing container is kept in a hydrogen gas-containing atmosphere.

Abstract: A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.

Abstract: An air-conditioning apparatus includes: a plurality of compressors included in one or more refrigerant circuits which air-condition a target space to be air-conditioned; a power converter which converts electric power supplied from a power source unit and supply the compressors with electric power for driving the compressors at an arbitrary drive rotation speed; a switching device which perform switching between a power supplying operation to cause each of the compressors to be supplied with electric power from the power converter and a power supplying operation to cause each of the compressors to be supplied with electric power directly from the power source unit; and a controller which controls the power converter and the switching device.

Abstract: A refrigerant circuit includes: plural gas/liquid separators adapted to separate a two-phase gas-liquid refrigerant into refrigerant vapor and refrigerant liquid; a channel switching valve connected upstream of the gas/liquid separators and adapted to switch channels for the two-phase gas-liquid refrigerant by opening and closing; an evaporating heat exchanger adapted to accept inflow of the refrigerant liquid or the two-phase gas-liquid refrigerant, the refrigerant liquid produced by separation by the gas/liquid separators; a header installed upstream of the evaporating heat exchanger perpendicularly or at angles to the evaporating heat exchanger; a compressor installed downstream of the evaporating heat exchanger; and plural bypass routes connected to the respective gas/liquid separators and adapted to allow passage of the refrigerant vapor.

Abstract: Provided is a tool-path generating device that includes a point-sequence generating unit that generates a point sequence that represents a tool path on the basis of a machining program, and a smoothing unit that smooths the generated point sequence. The smoothing unit includes a filter-length setting unit that sets filter lengths that are applied to the points such that a pre/post-smoothing divergence amount of each point in the point sequence is equal to or less than a first threshold, a filter-length changing unit that changes the set filter lengths such that an absolute value of a difference between the filter lengths applied to adjacent points in the point sequence is equal to or less than a second threshold, and a filter processing unit that performs filter processing on the basis of the changed filter lengths.

Abstract: A semiconductor memory device which is able to perform a power sequence with high reliability is provided. When a power from an external device is supplied, the controller of the flash memory of the invention is configured to read codes stored in a read-only memory in synchronization with a clock signal to perform a power-on sequence. In addition, the controller is further configured to deactivate the clock signal so as to pause the power-on sequence when it has been detected during the power-on sequence that the voltage of the power is not greater than a threshold, and to activate the clock signal to resume the power-on sequence when it is detected that the voltage of the supplied power exceeds the threshold again.

Abstract: A voltage generation circuit, having a circuit scale significantly reduced as compared with the related art, is provided. The voltage generation circuit of the disclosure includes a charge pump outputting a boosted voltage to an output node, a resistor connected between the output node and another output node, and a current source circuit having first and second current paths connected in parallel between the another output node and a reference potential. The first current path includes a resistor and a first DAC. The first DAC generates a first constant current corresponding to a voltage generation code. The second current path includes a second DAC. The second DAC generates a second constant current corresponding to a code obtained by inverting the voltage generation code. Thereby, a driving voltage obtained by lowering the boosted voltage is generated at the other output node.

Abstract: A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.

Abstract: There is provided a nitride film forming method which includes: performing a pretreatment in which a chlorine-containing gas is supplied while heating a substrate to be processed having a first base film and a second base film formed on the substrate to a predetermined temperature, and is adsorbed onto a surface of the first base film and a surface of the second base film; and forming a nitride film on the first base film and the second base film subjected to the pretreatment, by an ALD method or a CVD method, using a raw material gas and a nitriding gas, while heating the substrate to be processed to a predetermined temperature.

Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.

Abstract: A semiconductor storage device with a smaller chip size than prior art and a readout method are provided. The semiconductor storage device includes a memory cell array; a page buffer/sense circuit having a sensing node for sensing readout data from a selected page of the memory cell array and a latch circuit for holding data sensed by the sensing node; and a controller controls operations on the memory cell array. The sensing node includes an NMOS capacitor.

Abstract: A semiconductor memory device which is capable of high-speed operation in synchronization with external control signals is provided. The semiconductor memory device has a data input portion, a memory array, a data output portion, and a control portion. The data input portion receives command and address input data in response to the external control signals. The memory array has a plurality of memory elements. The data output portion outputs data read from the memory array in response to the external control signals. The control portion has the function of delay-compensation. During the time interval for receiving the input data, the function of delay-compensation estimates the delay time of the internal circuits, stores the estimated delay-time in a memory unit, and adjusts the output timing of the data output portion.

Abstract: A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the substrate, includes forming a first germanium film so as to fill the recess by supplying a germanium raw material gas to the substrate, etching the first germanium film with an etching gas containing an excited H2 gas or NH3 gas, and forming a second germanium film on the first germanium film so as to fill the recess by supplying a germanium raw material gas.