Abstract: There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.

Abstract: Provided is a fixing device including a heating unit that includes a circularly moving heating belt, and a pressurizing roller that presses an external face of the heating belt, the fixing device fixing a toner image on a sheet onto the sheet by nipping the sheet between the heating belt and the pressurizing roller and by heating and pressurizing the sheet transported with the toner image being held.

Abstract: A fixing device includes a rotatable endless fixing member that fixes a toner image onto a recording medium, and a heating member. The heating member includes a heat-generating layer that generates heat when supplied with electricity; an insulation layer that encloses the heat-generating layer therein to electrically insulate the heat-generating layer; a metallic layer that is laminated on a first surface of the insulation layer, has higher rigidity than the insulation layer, and generates an elastic restoring force; and a thermally conductive layer that is laminated on a second surface of the insulation layer, has lower rigidity than the metallic layer, and has higher thermal conductivity than the insulation layer and the metallic layer. The heating member is supported by one edge of the fixing member in a circumferential direction thereof, elastically deforms by being pressed against an inner peripheral surface of the fixing member, and heats the fixing member.

Abstract: The invention provides a voltage regulator. The voltage regulator (100) of the invention includes a comparison circuit (20) and a voltage divider circuit (110). The voltage divider circuit (110) has a PMOS transistor (T6) connected to a voltage source (VDD) and resistors (R1, R2, R3, R4, R5 and R6) serially connected between the transistor (T6) and a reference voltage. A feedback voltage generated from a node (N3) between resistors R4 and R5 is provided to the comparison circuit (20). In addition, a middle voltage (Vm) generated from a node (Nc) of the resistors is provided to a well region, so the parasitic capacitance is reduced.

Abstract: The invention provides a clamp voltage generating circuit capable of generating a correct clamp voltage. The clamp voltage generating circuit includes an emulate transistor, having a drain coupled to a power source VDD, a source coupled to a node, and a gate coupled to the clamp voltage; a current setting circuit, connected between the node and ground, for setting a current flowing from the node to the ground; a regulator, inputting a feedback voltage from the node and a reference voltage, and outputting a voltage VCLMP. The current setting circuit duplicates a current of a bit line, so that the emulate transistor is similar to a charge transfer transistor.

Abstract: Provided is a heating device that heats a belt which transports a medium on which a non-fixed image to be fixed onto the medium through heating is formed, the heating device including a heating element, a first insulating layer and a second insulating layer that are arranged to nip the heating element, a first supporting layer that comes into contact with the first insulating layer and a second supporting layer that comes into contact with the second insulating layer, both of which are arranged to nip the first insulating layer, the heating element, and the second insulating layer, and a connection member that connects the first supporting layer and the second supporting layer in a normal direction of the first supporting layer and the second supporting layer.

Abstract: A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.

Abstract: A semiconductor memory device includes: a memory array; a data-maintaining component, maintaining data read from the memory array or maintaining data used for writing to the memory array; an external input/output terminal; an error correction component, coupling the data-maintaining component and performing error-detection or correcting the data input to the data-maintaining component or output data from the data-maintaining component; a compressing component, coupling between the external input/output terminal and the error correction component and compressing or extending data. The compressing component compresses data provided by the external input/output terminal, provides the compressed data to the error correction component, extends the data provided by the error correction component, and provides the extended data to the external input/output terminal.

Abstract: An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group, wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber.

Abstract: A semiconductor device including a logic circuit capable of decreasing a leakage current occurred during a standby state is provided. The semiconductor device includes a power supply portion for supplying a first operation voltage or a second operation voltage smaller than the first operation voltage; a P-type low-threshold transistor Tp for receiving the first or the second operation voltage from the power supply portion; and a N-type transistor Tn connected between the transistor Tp and a base potential. The transistors Tp, Tn construct a logic circuit. The power supply portion supplies the first operation voltage to the source of the transistor Tp in the enable state, and supplies the second operation voltage in a standby state. The second operation voltage is set so that voltage amplitude between gate and source of each transistor Tp, Tn is larger than the threshold value of the transistors Tp, Tn.

Abstract: A cross recess is provided at a fastening seat portion of a cylinder head in which exhaust port outlets are arranged in two rows and two in each row. A cross protrusion that is fittable to the cross recess is provided at a flange of an exhaust manifold. A gasket has a cross opening through which the cross protrusion is insertable. The exhaust manifold is fastened to the cylinder head by passing the cross protrusion of the flange of the exhaust manifold through the cross opening of the gasket and then fitting the cross protrusion to the cross recess of the fastening seat portion of the cylinder head.

Abstract: A numerical controller extracts a subsequence from a sequence of command points obtained from a machining program in a manner such that the same path may be created regardless of whether the sequence of command points is extracted from the commanded direction or from the reverse direction. A compressed path approximated by a straight line or a curve is created in a manner such that the compressed path may be approximated by the same straight line or curve regardless of whether the compressed path is created from the extracted subsequence in a commanded direction or in the reverse direction.

Abstract: An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group, wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber.

Abstract: Provided is a heating device that heats a belt which transports a medium on which a non-fixed image to be fixed onto the medium through heating is formed, the heating device including a heating element, a first insulating layer and a second insulating layer that are arranged to nip the heating element, a first supporting layer that comes into contact with the first insulating layer and a second supporting layer that comes into contact with the second insulating layer, both of which are arranged to nip the first insulating layer, the heating element, and the second insulating layer, and a connection member that connects the first supporting layer and the second supporting layer in a normal direction of the first supporting layer and the second supporting layer.

Abstract: Provided is a fixing device including a heating unit that includes a circularly moving heating belt, and a pressurizing roller that presses an external face of the heating belt, the fixing device fixing a toner image on a sheet onto the sheet by nipping the sheet between the heating belt and the pressurizing roller and by heating and pressurizing the sheet transported with the toner image being held.

Abstract: The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.

Abstract: The invention provides a clamp voltage generating circuit capable of generating a correct clamp voltage. The clamp voltage generating circuit includes an emulate transistor, having a drain coupled to a power source VDD, a source coupled to a node, and a gate coupled to the clamp voltage; a current setting circuit, connected between the node and ground, for setting a current flowing from the node to the ground; a regulator, inputting a feedback voltage from the node and a reference voltage, and outputting a voltage VCLMP. The current setting circuit duplicates a current of a bit line, so that the emulate transistor is similar to a charge transfer transistor.

Abstract: A boosting circuit, includes an output circuit including a first transmission circuit, transmitting charges of a first boosting node to a first output node according to a first transmission control signal, a detection circuit, detecting the voltage level of the first output node, and a pre-charge circuit pre-charging the first boosting node according a detection signal of the detection circuit; a first pump circuit includes a second transmission circuit, transmitting charges to a second output node according to a second transmission control signal, and a first capacitance unit, coupled to the first boosting node, boosting the voltage level of the first boosting node according to charges transmitted in the second output node; and a control circuit, coupled to the output circuit and the first pump circuit, controls the second transmission control signal according to the voltage level of the first output node.

Abstract: A numerical control device for controlling a five-axis processing machine includes a tool-direction instruction correction unit, and corrects a tool-direction vector so that a tool direction of a processing program smoothly changes. The tool-direction instruction correction unit refers to a tool-direction correction tolerance set in advance by a tool-direction correction tolerance setting unit.

Abstract: A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.