Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract: A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: There are provided a liquid processing method and a liquid processing apparatus capable of providing a high etching rate and a high etching selectivity for silicon nitride against silicon oxide, and a storage medium storing the method thereon. In the method for etching, by an etching solution, a substrate on which silicon nitride and silicon oxide are exposed, the etching solution is produced by mixing a fluorine ion source material, water and a boiling point adjusting agent; the produced etching solution is heated to a substrate processing temperature equal to or higher than 140° C.; after a temperature of the etching solution reaches the substrate processing temperature, the temperature of the etching solution is maintained at the substrate processing temperature for a first preset time; and after a lapse of the first preset time, the substrate is etched by the etching solution maintained at the substrate processing temperature.

Abstract: Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

Abstract: A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

Abstract: A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

Abstract: A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.

Abstract: A non-contact IC label comprising an electrically insulating first substrate; an electrically connected antenna coil and IC chip provided on one surface of said substrate; a magnetic layer provided on said one surface of said substrate so as to cover said antenna coil and said IC chip, a first adhesive layer provided on said magnetic layer, an electrically insulating second substrate provided on said first adhesive layer, a second adhesive layer provided on said second substrate, a release paper provided on said second adhesive layer, and an overlay material provided on a third adhesive layer on the other surface of said first substrate.

Abstract: A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

Abstract: In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

Abstract: A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

Abstract: In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.

Abstract: Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

Abstract: Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

Abstract: Ion exchange equipment which can deal with counter-flow regeneration or split-flow regeneration while simplifying a water collector. The ion exchange equipment comprises a first water collection pipe (14) communicating with a first channel (10) formed in a lid member (7) at a resin containing section (2), and second water collection pipe (20) communicating with a second channel (11) formed in the lid member (7), wherein an inner diameter of the second water collection pipe (20) is set larger than an outer diameter of the first water collection pipe (14). The water collection pipes (14, 20) have axes set coaxially with the axis of the resin containing section (2) and form a double pipe, and a third channel (12) communicating with the resin containing section (2) is formed in the lid member (7).

Abstract: In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.