Patents by Inventor Hiroki Sasaki
Hiroki Sasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10619184Abstract: The object of the invention is to elucidate a new causative gene of cancer, polynucleotide, and thereby provide a method for detecting the polynucleotide or a polypeptide that is encoded by the polynucleotide, as well as a primer set or a detection kit for such detection. The detection method detects a fusion gene of a part of an OCLN gene and a part of an ARHGAP26 gene, or a fusion protein encoded by such gene. The primer set includes a sense primer designed from a section encoding OCLN and an antisense primer designed from a section encoding ARHGAP26.Type: GrantFiled: August 23, 2016Date of Patent: April 14, 2020Assignees: Astellas Pharma Inc., National Cancer CenterInventors: Hiroki Sasaki, Hitoshi Ichikawa, Makoto Asaumi, Kazuhisa Tsunoyama
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Patent number: 10619216Abstract: The object of the invention is to elucidate a new causative gene of cancer, polynucleotide, and thereby provide a method for detecting the polynucleotide or a polypeptide that is encoded by the polynucleotide, as well as a primer set or a detection kit for such detection. The detection method detects a fusion gene of a part of an RP2 gene and a part of an ARHGAP6 gene, or a fusion protein encoded by such gene. The primer set includes a sense primer designed from a section encoding RP2 and an antisense primer designed from a section encoding ARHGAP6.Type: GrantFiled: August 23, 2016Date of Patent: April 14, 2020Assignees: Astellas Pharma Inc., National Cancer CenterInventors: Hiroki Sasaki, Hitoshi Ichikawa
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Publication number: 20190273092Abstract: A semiconductor storage device includes a semiconductor substrate and a plurality of first wiring layers stacked above the semiconductor substrate in a first direction orthogonal to the semiconductor substrate, and extending in a second direction intersecting the first direction and parallel to the semiconductor substrate. The device further includes a first memory pillar including a semiconductor layer and a first insulation layer extending in the first direction, the first insulation layer provided between the plurality of first wiring layers and the semiconductor layer so as to contact the semiconductor layer, and charge storage layers provided respectively between the plurality of first wiring layers and the first insulation layer. One or more of the charge storage layers is in contact with the first insulation layer. A plurality of second insulation layers is provided between each of the plurality of first wiring layers and each of the charge storage layers.Type: ApplicationFiled: August 27, 2018Publication date: September 5, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Hiroki SASAKI, Atsushi MURAKOSHI, Ryuji OHBA
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Publication number: 20190259774Abstract: A storage device includes: a plurality of electrode films stacked in a first direction, and extending in a second direction intersecting the first direction; a first semiconductor film provided adjacent to the plurality of electrode films, and extending in the first direction; a first charge holding film provided between one electrode film among the plurality of electrode films, and the semiconductor film, and including any one of a metal, a metal compound, and a high dielectric material; and a second semiconductor film located between the first semiconductor film and the charge holding film, and extending in the first direction along the first semiconductor film. The second semiconductor film is electrically insulated from the plurality of electrode films, the first charge holding film, and the first semiconductor film.Type: ApplicationFiled: September 6, 2018Publication date: August 22, 2019Applicant: TOSHIBA MEMORY CORPORATIONInventors: Atsushi MURAKOSHI, Hiroki SASAKI
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Publication number: 20190218620Abstract: The purpose is to reveal a polynucleotide that is a novel causal gene of pancreatic cancer and thereby provide a method for detecting the polynucleotide or a polypeptide encoded thereby to select a subject positive for the polynucleotide or polypeptide and a method expected to be useful for to identify patients suitable for therapies and a primer set therefor and a kit for detection. In the method, a polynucleotide comprising a fusion point of a part of a CLDN18 gene and an ARHGAP6 gene or a polynucleotide comprising a fusion point of a part of a CLDN18 gene and an ARHGAP26 gene, or a fusion protein encoded thereby is detected. The primer set comprises a sense primer designed for a part encoding CLDN18 and an antisense primer designed for a part encoding ARHGAP6 or a part encoding ARHGAP26.Type: ApplicationFiled: August 9, 2017Publication date: July 18, 2019Applicants: Astellas Pharma Inc., National Cancer CenterInventor: Hiroki SASAKI
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Patent number: 10113907Abstract: Provided are an ultraviolet-sensing sheet, an ultraviolet-sensing set, and an ultraviolet-sensing method, in which color gradation properties which are suitable for detecting an ultraviolet dose are obtained and in which the coloring of an ultraviolet-sensing layer caused by the effect of light other than ultraviolet light is prevented. An ultraviolet-sensing sheet 1 includes: a filter layer 10 that selectively allows transmission of light having a specific wavelength; and an ultraviolet-sensing layer 20 that includes a capsule including a color-forming dye and a photooxidant. It is preferable that the filter layer 10 has a maximum value of the transmittance in a wavelength range of 300 nm or longer and shorter than 380 nm.Type: GrantFiled: January 23, 2017Date of Patent: October 30, 2018Assignee: FUJIFILM CorporationInventors: Masahiro Hatta, Takayuki Matsumoto, Hiroki Sasaki
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Publication number: 20180251850Abstract: The object of the invention is to elucidate a new causative gene of cancer, polynucleotide, and thereby provide a method for detecting the polynucleotide or a polypeptide that is encoded by the polynucleotide, as well as a primer set or a detection kit for such detection. The detection method detects a fusion gene of a part of an RP2 gene and a part of an ARHGAP6 gene, or a fusion protein encoded by such gene. The primer set includes a sense primer designed from a section encoding RP2 and an antisense primer designed from a section encoding ARHGAP6.Type: ApplicationFiled: August 23, 2016Publication date: September 6, 2018Inventors: Hiroki Sasaki, Hitoshi Ichikawa
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Publication number: 20180237862Abstract: The object of the invention is to elucidate a new causative gene of cancer, polynucleotide, and thereby provide a method for detecting the polynucleotide or a polypeptide that is encoded by the polynucleotide, as well as a primer set or a detection kit for such detection. The detection method detects a fusion gene of a part of an OCLN gene and a part of an ARHGAP26 gene, or a fusion protein encoded by such gene. The primer set includes a sense primer designed from a section encoding OCLN and an antisense primer designed from a section encoding ARHGAP26.Type: ApplicationFiled: August 23, 2016Publication date: August 23, 2018Inventors: Hiroki Sasaki, Hitoshi Ichikawa, Makoto Asaumi, Kazuhisa Tsunoyama
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Publication number: 20180208787Abstract: Provided are an aqueous pigment dispersion that includes an azo pigment represented by Formula (1) as described in the specification, and/or a tautomer thereof, the azo pigment showing characteristic X-ray diffraction peaks at least at Bragg's angles (2?±0.2°) of 4.8°, 7.2°, 9.7°, 20.0°, 17.3°, 26.0°, and 26.7° in CuK? characteristic X-ray diffraction; a first dispersant; a second dispersant; and water, the aqueous pigment dispersion being obtained via the following Step b. Step b: a step of dispersing an azo pigment represented by Formula (1) and/or a tautomer thereof, a first dispersant, and a second dispersant in water and thereby obtaining an aqueous pigment dispersion.Type: ApplicationFiled: March 22, 2018Publication date: July 26, 2018Applicant: FUJIFILM CorporationInventors: Keiichi TATEISHI, Hiroki SASAKI, Yoshiaki NAGATA
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Publication number: 20170292955Abstract: A method for evaluating an efficacy of a chemoradiotherapy against squamous cell carcinoma comprises the following steps (a) to (c): (a) detecting an expression level of at least one gene selected from a SIM2 gene and genes co-expressed with the SIM2 gene in a squamous cell carcinoma specimen isolated from a subject; (b) comparing the expression level detected in the step (a) with a reference expression level of the corresponding gene; and (c) determining that an efficacy of a chemoradiotherapy against squamous cell carcinoma in the subject is high if the expression level in the subject is higher than the reference expression level as a result of the comparison in the step (b).Type: ApplicationFiled: September 24, 2015Publication date: October 12, 2017Applicants: NATIONAL CANCER CENTER, KYOTO UNIVERSITY, OTSUKA PHARMACEUTICAL CO., LTD.Inventors: Hiroki SASAKI, Kazuhiko AOYAGI, Manabu MUTO, Hiroo TAKAHASHI
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Publication number: 20170131144Abstract: Provided are an ultraviolet-sensing sheet, an ultraviolet-sensing set, and an ultraviolet-sensing method, in which color gradation properties which are suitable for detecting an ultraviolet dose are obtained and in which the coloring of an ultraviolet-sensing layer caused by the effect of light other than ultraviolet light is prevented. An ultraviolet-sensing sheet 1 includes: a filter layer 10 that selectively allows transmission of light having a specific wavelength; and an ultraviolet-sensing layer 20 that includes a capsule including a color-forming dye and a photooxidant. It is preferable that the filter layer 10 has a maximum value of the transmittance in a wavelength range of 300 nm or longer and shorter than 380 nm.Type: ApplicationFiled: January 23, 2017Publication date: May 11, 2017Applicant: FUJIFILM CorporationInventors: Masahiro HATTA, Takayuki MATSUMOTO, Hiroki SASAKI
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Publication number: 20160301882Abstract: According to one embodiment, a solid-state imaging device comprises a photoelectric conversion film provided over a semiconductor substrate; a storing electrode provided under part of the photoelectric conversion film; an insulating film provided under the photoelectric conversion film so as to cover a top and a side wall of the storing electrode; a transfer electrode provided between the other part of the photoelectric conversion film and the insulating film; and an upper electrode provided on the photoelectric conversion film.Type: ApplicationFiled: June 17, 2015Publication date: October 13, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hirofumi YAMASHITA, Hiroki SASAKI
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Publication number: 20160064441Abstract: A solid imaging device to an embodiment includes a semiconductor substrate and a conductive film. The semiconductor substrate has a plurality of photoelectric conversion elements constituting a plurality of pixels formed therein, the semiconductor substrate having a first surface and a second surface opposite to the first surface and being equipped with a wire layer on a first surface side of the semiconductor substrate. The conductive film is patterned and arranged above a border between pixels of the plurality of pixels on a second surface side of the semiconductor substrate. The conductive film is substantially transparent to visible light.Type: ApplicationFiled: January 30, 2015Publication date: March 3, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroki SASAKI, Koichi KOKUBUN
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Publication number: 20150334320Abstract: According to one embodiment, there is provided a solid-state imaging device including a charge storage portion and a photoelectric conversion portion. The charge storage portion is formed of a first semiconductor material. The photoelectric conversion portion is formed of a second semiconductor material having a narrower band gap than the first semiconductor material. The charge storage portion forms an overflow potential in a connection area with the photoelectric conversion portion so that charges generated in the photoelectric conversion portion in response to incident light can overflow the overflow potential into the charge storage portion.Type: ApplicationFiled: August 29, 2014Publication date: November 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Hiroki SASAKI
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Patent number: 9064767Abstract: According to one embodiment, a pixel detecting light having the longest wavelength in a picture element includes a protective film which is disposed on a photodiode at a surface side facing a light incident surface of a semiconductor substrate and a first diffraction grating portion which is disposed on the protective film and where columnar holes penetrating in a thickness direction are two-dimensionally arrayed. Diameter and array period of the holes are selected so that the first diffraction grating portion reflects light transmitting through a filter disposed on the pixel.Type: GrantFiled: August 29, 2012Date of Patent: June 23, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hiroki Sasaki, Koichi Kokubun
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Patent number: 9006634Abstract: According to one embodiment, a solid state imaging device includes a first SiGe layer provided at an uppermost layer of a photoelectric conversion layer from the viewpoint of an incident light side, and a second SiGe layer provided under the first SiGe layer in the photoelectric conversion layer and having a higher Ge concentration than the first SiGe layer.Type: GrantFiled: December 21, 2012Date of Patent: April 14, 2015Assignee: Kabushiki Kaisha ToshibaInventor: Hiroki Sasaki
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Publication number: 20150048317Abstract: According to one embodiment, solid state imaging device includes, a semiconductor substrate and a photoelectric conversion unit formed in the semiconductor substrate or above the semiconductor substrate. Further, the photoelectric conversion unit is provided with a first photoelectric conversion unit and a second photoelectric conversion unit. One of the first and second photoelectric conversion unit uses at least a part of the semiconductor substrate as a first photoelectric conversion layer, and the other of the first and second photoelectric conversion unit uses an inorganic semiconductor material that is of a different type from the semiconductor substrate as a second photoelectric conversion layer. The second photoelectric conversion unit photoelectrically converts light in a wavelength range that had permeated the first photoelectric conversion unit.Type: ApplicationFiled: December 10, 2013Publication date: February 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventor: Hiroki SASAKI
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Patent number: 8872275Abstract: An SRAM device has a first tunnel transistor that allows a current to flow in a direction from the non-inverting output terminal to the first bit line when the first tunnel transistor turns on. The SRAM device has a second tunnel transistor allows a current to flow in a direction from the first bit line to the non-inverting output terminal when the second tunnel transistor turns on. The SRAM device has a third tunnel transistor allows a current to flow in a direction from the inverting output terminal to the second bit line when the third tunnel transistor turns on. The SRAM device has a fourth tunnel transistor allows a current to flow in a direction from the second bit line to the inverting output terminal when the fourth tunnel transistor turns on.Type: GrantFiled: February 8, 2012Date of Patent: October 28, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hiroki Sasaki, Keisuke Nakatsuka
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Patent number: 8818630Abstract: A vehicular vibration damping control apparatus calculates a correction torque to suppress vehicle body sprung vibration. In outputting a correction torque command to a driving/braking torque producing device, the control apparatus outputs a hunting time correction torque command smaller than a normal time correction toque command when a state in which amplitude of the correction torque is greater than or equal to a predetermined amplitude continues for a predetermined time length, and thereafter to return an output of the correction torque command from the hunting time correction torque command to the normal time correction torque command if a state in which the amplitude of the correction torque is smaller than or equal to the predetermined amplitude continues for a first predetermined time length. The frequency of performing the vibration damping control is increased by suppressing occurrence of hunting at the time of return to the normal vibration damping control.Type: GrantFiled: April 20, 2011Date of Patent: August 26, 2014Assignee: Nissan Motor Co., Ltd.Inventors: Yosuke Kobayashi, Takeshi Kimura, Yuuki Shiozawa, Mitsunori Ohta, Hiroki Sasaki, Akihiro Itoh, Masahiko Yoshizawa
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Patent number: 8791542Abstract: According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D2m3/L2m3×ni32/N2<D1M2/L1M2×ni22/N2 and D1m1/L1m1×ni12/N1<D1m2/L1m2×ni22/N1 are established.Type: GrantFiled: December 28, 2012Date of Patent: July 29, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Shuichi Toriyama, Koichi Kokubun, Hiroki Sasaki