Patents by Inventor Hiroki TOKUHIRA
Hiroki TOKUHIRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240098977Abstract: According to one embodiment, a semiconductor device includes a first wiring line provided in a first layer and extending in a first direction, a second wiring line provided in a second layer and extending in the first direction, a first semiconductor layer penetrating the first wiring line without penetrating the second wiring line and extending in a second direction, a second semiconductor layer penetrating the second wiring line without penetrating the first wiring line and extending in the second direction, a first insulating layer provided between the first wiring line and the first semiconductor layer, a second insulating layer provided between the second wiring line and the second semiconductor layer.Type: ApplicationFiled: September 15, 2023Publication date: March 21, 2024Applicant: Kioxia CorporationInventors: Takashi Inukai, Hiroki Tokuhira, Tsuneo Inaba
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Patent number: 11917930Abstract: A resistance change device of an embodiment includes: a first electrode; a second electrode; and a stack disposed between these electrodes, and including a first layer containing a resistance change material and a second layer in contact with the first layer. The resistance change material contains at least one of a first element such as Ge and a second element such as Sb, and at least one third element selected from Te, Se, S, and O. The second layer contains a crystal material containing at least one selected from a group consisting of a first material having a composition represented by (Ti,Zr,Hf)CoSb, (Zr,Hf)NiSn, or Fe(Nb,Zr,Hf)(Sb,Sn), a second material having a composition represented by Fe(V,Hf,W)(Al,Si), and a third material having a composition represented by Mg(Si,Ge,Sn).Type: GrantFiled: August 31, 2021Date of Patent: February 27, 2024Assignee: Kioxia CorporationInventors: Takao Kosaka, Hiroki Tokuhira
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Publication number: 20240008278Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.Type: ApplicationFiled: July 26, 2023Publication date: January 4, 2024Applicant: KIOXIA CORPORATIONInventors: Hiroki TOKUHIRA, Takahisa KANEMURA, Shigeo KONDO, Michiru HOGYOKU
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Publication number: 20230413516Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.Type: ApplicationFiled: August 29, 2023Publication date: December 21, 2023Applicant: Kioxia CorporationInventors: Teruhisa SONOHARA, Shunichi SENO, Hiroki TOKUHIRA, Fumitaka ARAI
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Publication number: 20230403955Abstract: A semiconductor memory device includes: a first wiring extending in a first direction; a second wiring extending in a second direction that intersects with the first direction; a resistance change film provided between the first wiring and the second wiring and including at least one element selected from a group consisting of germanium, antimony, and tellurium; an electrode provided between the resistance change film and the first wiring; and a first film selectively provided between the electrode and the first wiring, in which the electrode includes a surface in contact with both of the first wiring and the first film.Type: ApplicationFiled: June 7, 2023Publication date: December 14, 2023Applicant: Kioxia CorporationInventors: Ryouji MASUDA, Hiroki TOKUHIRA
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Patent number: 11778808Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.Type: GrantFiled: September 13, 2021Date of Patent: October 3, 2023Assignee: Kioxia CorporationInventors: Teruhisa Sonohara, Shunichi Seno, Hiroki Tokuhira, Fumitaka Arai
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Publication number: 20230301118Abstract: A semiconductor memory device includes a first wiring extending in a first direction; a second wiring extending in a second direction and spaced from the first wiring in a third direction; a stacked body disposed between the first and second wirings and including conductive layers and insulating layers alternately stacked on top of one another in the third direction; a columnar body extending through the stacked body and including: (a) an electrode disposed between the first wiring and the second wiring, (b) a memory layer disposed between the electrode and the conductive layers, and (c) a selection layer disposed between the electrode and the first wiring; and a diode disposed between the electrode and the second wiring.Type: ApplicationFiled: September 1, 2022Publication date: September 21, 2023Applicant: Kioxia CorporationInventors: Katsuyoshi KOMATSU, Hiroki TOKUHIRA, Hiroshi TAKEHIRA, Hiroyuki ODE, Jieqiong ZHANG
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Patent number: 11751399Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.Type: GrantFiled: April 8, 2022Date of Patent: September 5, 2023Assignee: KIOXIA CORPORATIONInventors: Hiroki Tokuhira, Takahisa Kanemura, Shigeo Kondo, Michiru Hogyoku
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Patent number: 11711925Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.Type: GrantFiled: March 1, 2021Date of Patent: July 25, 2023Assignee: Kioxia CorporationInventors: Hiroki Tokuhira, Tsuyoshi Kondo, Mutsumi Okajima, Yoshihiro Ueda
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Publication number: 20230085635Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.Type: ApplicationFiled: March 7, 2022Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Hiroki KAWAI, Kasumi YASUDA, Hiroki TOKUHIRA, Kazuhiro KATONO, Akifumi GAWASE, Katsuyoshi KOMATSU, Tadaomi DAIBOU
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Publication number: 20230085722Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.Type: ApplicationFiled: March 4, 2022Publication date: March 23, 2023Inventors: Jieqiong ZHANG, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Takeshi IWASAKI, Hiroki TOKUHIRA, Hiroki KAWAI, Hiroshi TAKEHIRA
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Publication number: 20230091204Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.Type: ApplicationFiled: February 28, 2022Publication date: March 23, 2023Inventors: Takao KOSAKA, Hideto HORII, Hiroki TOKUHIRA, Kazuya MATSUZAWA, Hiroki KAWAI
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Patent number: 11600772Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x?(3?(3+b)×y?z)/(3+a).Type: GrantFiled: September 8, 2020Date of Patent: March 7, 2023Assignee: Kioxia CorporationInventors: Hiroki Kawai, Katsuyoshi Komatsu, Tadaomi Daibou, Hiroki Tokuhira, Masatoshi Yoshikawa, Yuichi Ito
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Patent number: 11600773Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0<x?35, 15?y?50, and 50<z?85, satisfy 0<x?45, 15?y?55, and 40<z?85, or satisfy 0<x?55, 15?y?65, and 30<z?85.Type: GrantFiled: February 25, 2021Date of Patent: March 7, 2023Assignee: KIOXIA CORPORATIONInventors: Toshihiko Nagase, Daisuke Watanabe, Yoshitomo Kobayashi, Hiroki Tokuhira, Hiroki Kawai
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Publication number: 20220328489Abstract: A semiconductor memory device includes: a first wiring; a first semiconductor layer connected to the first wiring, the first semiconductor layer; a first electrode, the first electrode being connected to the first semiconductor layer; a second electrode disposed between the first electrode and the first wiring, the second electrode being opposed to the first semiconductor layer; a third electrode disposed between the second electrode and the first wiring, the third electrode; a second semiconductor layer disposed between the third electrode and the first semiconductor layer, the second semiconductor layer being opposed to the third electrode; and an electric charge accumulating layer electrically connected to the first wiring via the second semiconductor layer, the electric charge accumulating layer being opposed to the first semiconductor layer.Type: ApplicationFiled: September 13, 2021Publication date: October 13, 2022Applicant: Kioxia CorporationInventors: Teruhisa SONOHARA, Shunichi SENO, Hiroki TOKUHIRA, Fumitaka ARAI
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Publication number: 20220302385Abstract: A resistance change device of an embodiment includes: a first electrode; a second electrode; and a stack disposed between these electrodes, and including a first layer containing a resistance change material and a second layer in contact with the first layer. The resistance change material contains at least one of a first element such as Ge and a second element such as Sb, and at least one third element selected from Te, Se, S, and O. The second layer contains a crystal material containing at least one selected from a group consisting of a first material having a composition represented by (Ti,Zr,Hf)CoSb, (Zr,Hf)NiSn, or Fe(Nb,Zr,Hf)(Sb,Sn), a second material having a composition represented by Fe(V,Hf,W)(Al,Si), and a third material having a composition represented by Mg(Si,Ge,Sn).Type: ApplicationFiled: August 31, 2021Publication date: September 22, 2022Applicant: Kioxia CorporationInventors: Takao KOSAKA, Hiroki TOKUHIRA
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Publication number: 20220231032Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.Type: ApplicationFiled: April 8, 2022Publication date: July 21, 2022Applicant: KIOXIA CORPORATIONInventors: Hiroki TOKUHIRA, Takahisa KANEMURA, Shigeo KONDO, Michiru HOGYOKU
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Patent number: 11329060Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.Type: GrantFiled: September 22, 2020Date of Patent: May 10, 2022Assignee: KIOXIA CORPORATIONInventors: Hiroki Tokuhira, Takahisa Kanemura, Shigeo Kondo, Michiru Hogyoku
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Publication number: 20210288252Abstract: A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains SixTeyNz. The x, y, and z of the SixTeyNz satisfy 0<x?35, 15?y?50, and 50<z?85, satisfy 0<x?45, 15?y?55, and 40<z?85, or satisfy 0<x?55, 15?y?65, and 30<z?85.Type: ApplicationFiled: February 25, 2021Publication date: September 16, 2021Applicant: Kioxia CorporationInventors: Toshihiko NAGASE, Daisuke WATANABE, Yoshitomo KOBAYASHI, Hiroki TOKUHIRA, Hiroki KAWAI
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Publication number: 20210280635Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.Type: ApplicationFiled: March 1, 2021Publication date: September 9, 2021Applicant: Kioxia CorporationInventors: Hiroki TOKUHIRA, Tsuyoshi KONDO, Mutsumi OKAJIMA, Yoshihiro UEDA