Patents by Inventor Hiroko Nakamura
Hiroko Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9017930Abstract: According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.Type: GrantFiled: September 20, 2012Date of Patent: April 28, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Patent number: 8986488Abstract: According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures.Type: GrantFiled: January 25, 2013Date of Patent: March 24, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Koji Asakawa, Hiroko Nakamura, Ryota Kitagawa, Yuriko Seino, Masahiro Kanno, Momoka Higa
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Patent number: 8980748Abstract: A substrate polishing method, a semiconductor device and a fabrication method for a semiconductor device are disclosed by which high planarization polishing can be achieved. In the substrate polishing method, two or more different slurries formed from ceria abrasive grains having different BET values from each other are used to carry out two or more stages of chemical-mechanical polishing processing of a polishing object oxide film on a substrate to flatten the polishing object film.Type: GrantFiled: January 3, 2008Date of Patent: March 17, 2015Assignee: Sony CorporationInventors: Hiroko Nakamura, Takaaki Kozuki, Takayuki Enomoto, Yuichi Yamamoto
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Patent number: 8808973Abstract: According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.Type: GrantFiled: February 22, 2012Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Mikoshiba, Koji Asakawa, Hiroko Nakamura, Shigeki Hattori, Atsushi Hieno, Tsukasa Azuma, Yuriko Seino, Masahiro Kanno
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Publication number: 20140127910Abstract: According to one embodiment, a pattern formation method includes: forming a block copolymer layer containing a polystyrene derivative and an acrylic having 6 or more carbon atoms on a side chain in an opening of a resist layer provided on an underlayer and having the opening; forming a first layer containing the polystyrene derivative and a second layer containing the acrylic in the opening by phase-separating the block copolymer layer; and removing the second layer.Type: ApplicationFiled: October 29, 2013Publication date: May 8, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Atsushi HIENO, Hiroko Nakamura, Koji Asakawa
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Patent number: 8636914Abstract: According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.Type: GrantFiled: March 27, 2012Date of Patent: January 28, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Satoshi Tanaka, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Publication number: 20130183828Abstract: According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.Type: ApplicationFiled: September 20, 2012Publication date: July 18, 2013Inventors: Hiroko NAKAMURA, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Publication number: 20130075360Abstract: According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.Type: ApplicationFiled: March 27, 2012Publication date: March 28, 2013Inventors: Hiroko NAKAMURA, Satoshi Tanaka, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Publication number: 20130078570Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.Type: ApplicationFiled: September 25, 2012Publication date: March 28, 2013Inventors: Atsushi HIENO, Shigeki HATTORI, Hiroko NAKAMURA, Satoshi MIKOSHIBA, Koji ASAKAWA, Masahiro KANNO, Yuriko SEINO, Tsukasa AZUMA
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Publication number: 20120238588Abstract: Derivatives of pyrrolo[2,3-b]pyridine which are useful as SGK-1 kinase inhibitors are described herein. The invention described herein also describes pharmaceutical compositions containing derivatives of pyrrolo[2,3-b]pyridine and methods of using pyrrolo[2,3-b]pyridine derivatives and pharmaceutical compositions thereof in the treatment of diseases mediated by SGK-1.Type: ApplicationFiled: March 27, 2012Publication date: September 20, 2012Inventors: James S. Frazee, Marlys Hammond, Sharada Manns, Scott Kevin Thompson, David G. Washburn, Kazuya Kano, Hiroko Nakamura
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Publication number: 20120214094Abstract: According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.Type: ApplicationFiled: February 22, 2012Publication date: August 23, 2012Inventors: Satoshi MIKOSHIBA, Koji Asakawa, Hiroko Nakamura, Shigeki Hattori, Atsushi Hieno, Tsukasa Azuma, Yuriko Seino, Masahiro Kanno
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Publication number: 20120127454Abstract: According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.Type: ApplicationFiled: September 22, 2011Publication date: May 24, 2012Inventors: Hiroko NAKAMURA, Koji Asakawa, Shigeki Hattori, Satoshi Tanaka, Toshiya Kotani
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Patent number: 8182981Abstract: A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film so as to cover the first film, irradiating a predetermined region of the second resist film with exposure light, heating the first film and the second resist film, performing a development process, removing the second resist film of the predetermined region and forming a second resist pattern while the first film is left, and etching the processed film with the first resist pattern and the second resist pattern as a mask.Type: GrantFiled: July 6, 2009Date of Patent: May 22, 2012Assignee: Kabushiki Kaisha ToshibaInventor: Hiroko Nakamura
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Patent number: 8101516Abstract: A block film is formed on a region which includes a region of an insulating layer where a first hole is to be formed, and in which no second hole is to be formed, and a resist film having openings for forming the first and second holes is formed on the block film and insulating layer. Etching is performed by using the resist film as a mask, thereby forming the first hole in the block film and insulating layer, and the second hole in the insulating layer. The depth of the first hole from the upper surface of the insulating layer is smaller than that of the second hole, so the first hole does not reach the semiconductor substrate.Type: GrantFiled: September 18, 2007Date of Patent: January 24, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Toshiya Kotani, Hiroko Nakamura, Koji Hashimoto
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Patent number: 7972932Abstract: A mark forming method includes forming a first mask layer on a semiconductor substrate; forming at least three first patterns having periodicity on the first mask layer; forming a second mask layer on the first mask layer having the first patterns formed thereon; and forming an opening in the second mask layer to cover at least two patterns on ends of the at least three first patterns, thereby forming a mark composed of exposed ones of the first patterns.Type: GrantFiled: March 20, 2009Date of Patent: July 5, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Takashi Sato, Hiroko Nakamura, Masaru Suzuki, Ryoichi Inanami
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Publication number: 20100317196Abstract: A method for manufacturing a semiconductor device, includes: forming a first resist on a workpiece; patterning the first resist by performing selective exposure, baking, and development on the first resist; forming a second resist on the workpiece after the patterning the first resist; patterning the second resist by performing selective exposure, baking, and development on the second resist to selectively remove a part of the second resist and remove the first resist left on the workpiece; and processing the workpiece by using the patterned second resist as a mask.Type: ApplicationFiled: February 25, 2010Publication date: December 16, 2010Inventor: Hiroko NAKAMURA
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Patent number: 7816060Abstract: A manufacturing method of a semiconductor device including a pattern forming method, a reticle correcting method, and a reticle pattern data correcting method are disclosed.Type: GrantFiled: March 13, 2007Date of Patent: October 19, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Hiroko Nakamura
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Patent number: 7749687Abstract: A method of forming a pattern on a photosensitive resin film in lithography, a method of forming a pattern for a semiconductor device, and a method of manufacturing a semiconductor device using the patterned film are disclosed. In an aspect of the invention, there is provided a method of forming a pattern on a photosensitive resin film, comprising forming a processing-object film above a semiconductor substrate, forming a first patterned photosensitive resin layer on the processing-object film, implanting ions into the first patterned photosensitive resin layer, the sum (Rp+3dRp) of a projected range (Rp) for the ions in the first photosensitive resin layer and three times a standard deviation (dRp) of the projected range being greater than a thickness of the first patterned photosensitive resin layer, and forming a second patterned photosensitive resin layer on the ion-implanted first patterned photosensitive resin layer.Type: GrantFiled: May 16, 2007Date of Patent: July 6, 2010Assignee: Kabushiki Kaisha ToshibaInventor: Hiroko Nakamura
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Publication number: 20100021850Abstract: A pattern forming method has forming a first resist film on a processed film, patterning the first resist film into a first resist pattern, forming a first film containing a photo acid generator so as to cover the first resist pattern, forming a second resist film so as to cover the first film, irradiating a predetermined region of the second resist film with exposure light, heating the first film and the second resist film, performing a development process, removing the second resist film of the predetermined region and forming a second resist pattern while the first film is left, and etching the processed film with the first resist pattern and the second resist pattern as a mask.Type: ApplicationFiled: July 6, 2009Publication date: January 28, 2010Inventor: Hiroko NAKAMURA
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Publication number: 20100016307Abstract: The present invention relates to compounds of formula (I): and processes for preparing them, compositions containing them and their use in treating diseases relating to inappropriate c-Met activity.Type: ApplicationFiled: October 24, 2007Publication date: January 21, 2010Inventors: Toshihiro Hamajima, Hiroko Nakamura, Jun Tang