Patents by Inventor Hiroko Nakamura
Hiroko Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030147113Abstract: A communication apparatus of the present invention notifies a user that one of a plurality of events has occurred, and includes a first reception unit, a second reception unit, a detection unit, and a light emitting unit. The first reception unit receives from the user, for each time slot that composes a light emission pattern, designation of a light emission color or non-emission, as a light emission attribute of the time slot. The second reception unit receives a designation of an event to be corresponded with the light emission pattern. The detection unit detects that one of the plurality of events has occurred. The light emitting unit, when the detection unit detects that the event has occurred, emits light based on the light emission pattern designated in correspondence with the event.Type: ApplicationFiled: December 26, 2002Publication date: August 7, 2003Inventors: Yoji Hamada, Hiroko Nakamura
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Publication number: 20010033894Abstract: After a thin liquid agent film is formed by supplying a liquid agent onto a plate-like developer holder, this liquid agent film and the surface of a substrate are opposed. The liquid agent film and the substrate are brought into contact with each other at a point by declining the substrate and moving it close to the liquid agent film, or by curving the substrate toward the liquid agent film. Then, the substrate is made parallel to the liquid agent film, and the liquid agent is supplied such that the contact area of the liquid agent film spreads over the entire surface by the interfacial tension between the liquid agent film and the substrate. Since a thin liquid agent film can be uniformly formed below the substrate, processing can be performed with a small consumption amount. Additionally, the liquid agent can be supplied to the substrate without holding air.Type: ApplicationFiled: March 14, 2001Publication date: October 25, 2001Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroko Nakamura, Hisashi Kaneko, Tetsuo Matsuda
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Publication number: 20010014536Abstract: Disclosed herein is a method for processing a substrate. The method includes supplying a liquid agent such as a developer onto the surface of a substrate, bringing an upper surface of a film formed of the liquid agent into contact with a liquid agent holding member arranged so as to face the substrate, holding the liquid agent between the substrate and the liquid agent holding member, moving the substrate or the liquid agent holding member, or both, in parallel to the main surface of the substrate, while the main surface of the substrate is being treated with the liquid agent. Since the concentrations of reaction products and starting reaction materials become uniform in the liquid agent which contacts the substrate, the entire substrate can be processed uniformly.Type: ApplicationFiled: April 24, 2001Publication date: August 16, 2001Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroko Nakamura, Shinichi Ito, Katsuya Okumura
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Patent number: 6265323Abstract: Disclosed herein is a method for processing a substrate. The method includes supplying a liquid agent such as a developer onto the surface of a substrate, bringing an upper surface of a film formed of the liquid agent into contact with a liquid agent holding member arranged so as to face the substrate, holding the liquid agent between the substrate and the liquid agent holding member, moving the substrate or the liquid agent holding member, or both, in parallel to the main surface of the substrate, while the main surface of the substrate is being treated with the liquid agent. Since the concentrations of reaction products and starting reaction materials become uniform in the liquid agent which contacts the substrate, the entire substrate can be processed uniformly.Type: GrantFiled: February 23, 1999Date of Patent: July 24, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Shinichi Ito, Katsuya Okumura
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Patent number: 6028953Abstract: A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beamType: GrantFiled: June 4, 1998Date of Patent: February 22, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Kazuyoshi Sugihara, Haruki Komano
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Patent number: 5807650Abstract: A method of repairing a defect existing on a photo mask comprising a transparent substrate and a mask pattern formed on the substrate, comprises steps of irradiating a focused ion beam toward the defect and supplying XeF.sub.2 gas to the defect, when an etching rate of the defect by the focused ion beam and XeF.sub.2 is 1.7 times greater than an etching rate by a sole irradiation of the focused ion beam.Type: GrantFiled: August 20, 1997Date of Patent: September 15, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Haruki Komano, Hiroko Nakamura, Munehiro Ogasawara, Satoshi Masuda, Katsuya Okumura, Yoji Ogawa
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Patent number: 5799104Abstract: A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beamType: GrantFiled: August 22, 1996Date of Patent: August 25, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Kazuyoshi Sugihara, Haruki Komano
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Patent number: 5793856Abstract: A switch system for switching extension numbers, which can be changed by a subscriber having the extension number of the BBG (Basic Business Group) without the operation by a switch operator, is connected with a plurality of telephone sets (TEL) which belong to the BBG (Basic Business Group). An access code and an extension number are sent from one telephone set of the BBG to the switch. A former extension number of the one telephone set is deleted by the switch system and is registered in the switch to change the former extension number of the one telephone set to the extension number sent from the one telephone set. The switch system has a subscriber circuit section, a digital switch module and a central processing section including a central processor, a main memory and a file memory.Type: GrantFiled: September 3, 1996Date of Patent: August 11, 1998Assignee: Fujitsu LimitedInventor: Hiroko Nakamura
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Patent number: 5639699Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.Type: GrantFiled: April 11, 1995Date of Patent: June 17, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Haruki Komano, Kazuyoshi Sugihara, Keiji Horioka, Mitsuyo Kariya, Soichi Inoue, Ichiro Mori, Katsuya Okumura, Tadahiro Takigawa, Toru Watanabe, Motosuke Miyoshi, Yuichiro Yamazaki, Haruo Okano
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Patent number: 5623306Abstract: A solid-state image sensing device having a plurality of pixels each of which outputs to a transmission portion (12) a signal charge corresponding to an amount of light projected thereon. The signal charge transmitted by the transmission portion (12) is outputted as an image signal for each pixel from the solid state image sensing device. Each pixel includes a photo-diode (32), a storage portion (41) for storing charge corresponding to a current output from the photo-diode (32) onto which light is projected, a transfer portion (42) for transferring the charge stored by the storage portion to the transmission portion, and a control portion (39) for controlling an amount of charge to be received by the transmission portion based on a dark current characteristic of a corresponding photo-diode (32).Type: GrantFiled: June 26, 1995Date of Patent: April 22, 1997Assignee: Fujitsu LimitedInventors: Nobuyuki Kajihara, Gen Sudo, Kenji Arinaga, Koji Fujiwara, Hiroko Nakamura
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Patent number: 5591970Abstract: A charged beam apparatus of this invention comprises a sample table on which a sample is placed, a column for irradiating a charged beam on a surface of the sample, a gas supply mechanism having a gas supply opening for injecting a gas to an irradiated position of the charged beam, and a driving mechanism for moving the gas supply opening parallel to the surface of the sample in order to position the gas supply opening, and moving the gas supply opening perpendicularly to the surface of the sample in order to set a distance from the gas supply opening to a processing position. This allows the gas pressure to be stably held with a high accuracy at the processing position. Accordingly, desired deposition or etching can be performed with a high accuracy, and this further improves the quality of the mask.Type: GrantFiled: September 13, 1995Date of Patent: January 7, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Haruki Komano, Akira Matsuura, Hiroko Nakamura, Kazuyoshi Sugihara
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Patent number: 5549995Abstract: A transmitting photomask includes an optically transparent substrate having a major surface on which a plurality of recesses are selectively formed and transmitting exposure light, a plurality of opaque materials formed on the portions of the major surface of the transparent substrate, other than the recesses and preventing the exposure light from passing therethrough, and a plurality of transmitting portions constituted of the recesses. Each of the recesses has side walls formed perpendicular to the major surface of the transparent substrate so as to substantially coincide with a corresponding end face of each of the opaque materials, and adjacent transmitting portions have different depths.Type: GrantFiled: March 13, 1995Date of Patent: August 27, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Tanaka, Soichi Inoue, Hiroko Nakamura
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Patent number: 5429730Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.Type: GrantFiled: November 2, 1993Date of Patent: July 4, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Haruki Komano, Kazuyoshi Sugihara, Keiji Horioka, Mitsuyo Kariya, Soichi Inoue, Ichiro Mori, Katsuya Okumura, Tadahiro Takigawa, Toru Watanabe, Motosuke Miyoshi, Yuichiro Yamazaki, Haruo Okano
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Patent number: 4968529Abstract: To obtain an anticorrosive Fe-B-R type permanent magnet; in particular, to reduce deterioration rate of the initial magnetic properties below 10% after the magnet has been kept at 80.degree. C. in 90% relative humidity for 500 hours, the surface of the sintered permanent magnet is coated with metallic coating film layers of at least one noble metal layer and at least one base metal layer disposed on the noble metal layer. Diffusion heat treatment further improves the adhesiveness of the coating film layers.Type: GrantFiled: December 21, 1989Date of Patent: November 6, 1990Assignees: Sumitomo Special Metals Co., Ltd., Toda Kogyo Corp.Inventors: Atsushi Hamamura, Takaki Hamada, Hiroko Nakamura, Tomoyuki Imai, Toshiki Matsui, Nanao Horiishi
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Patent number: 4942098Abstract: To obtain an anticorrosive Fe-B-R type permanent magnet; in particular, to reduce deterioration rate of the initial magnetic properties below 10% after the magnet has been kept at 80.degree. C. in 90% relative humidity for 500 hours, the surface of the sintered permanent magnet is coated with metallic coating film layers of at least one noble metal layer and at least one base metal layer disposed on the noble metal layer. Diffusion heat treatment further improves the adhesiveness of the coating film layers.Type: GrantFiled: March 24, 1988Date of Patent: July 17, 1990Assignees: Sumitomo Special Metals, Co., Ltd., Toda Kogyo Corp.Inventors: Atsushi Hamamura, Takaki Hamada, Hiroko Nakamura, Tomoyuki Imai, Toshiki Matsui, Nanao Horiishi
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Patent number: D404064Type: GrantFiled: December 29, 1997Date of Patent: January 12, 1999Assignee: Fuji Xerox Co., Ltd.Inventor: Hiroko Nakamura
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Patent number: D404065Type: GrantFiled: July 18, 1997Date of Patent: January 12, 1999Assignee: Fuji Xerox Co., Ltd.Inventor: Hiroko Nakamura