Patents by Inventor Hiromi Fuke
Hiromi Fuke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8929035Abstract: A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.Type: GrantFiled: May 19, 2009Date of Patent: January 6, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 8363362Abstract: According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.Type: GrantFiled: January 30, 2012Date of Patent: January 29, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki
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Patent number: 8331062Abstract: A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.Type: GrantFiled: November 8, 2011Date of Patent: December 11, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki
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Patent number: 8274765Abstract: A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.Type: GrantFiled: September 18, 2009Date of Patent: September 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki
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Patent number: 8259419Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: GrantFiled: September 23, 2011Date of Patent: September 4, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Publication number: 20120182647Abstract: According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.Type: ApplicationFiled: January 30, 2012Publication date: July 19, 2012Inventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki
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Publication number: 20120049302Abstract: A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.Type: ApplicationFiled: November 8, 2011Publication date: March 1, 2012Applicants: TDK CORPORATION, KABUSHIKI KAISHA TOSHIBAInventors: Hiromi FUKE, Susumu HASHIMOTO, Masayuki TAKAGISHI, Hitoshi IWASAKI
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Publication number: 20120009440Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: ApplicationFiled: September 23, 2011Publication date: January 12, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideaki FUKUZAWA, Katsuhiko KOI, Hiromi FUKE, Hiroshi TOMITA, Hitoshi IWASAKI, Masashi SAHASHI
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Patent number: 8049999Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: GrantFiled: December 31, 2008Date of Patent: November 1, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Patent number: 8031443Abstract: A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.Type: GrantFiled: February 22, 2008Date of Patent: October 4, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7843669Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: February 6, 2009Date of Patent: November 30, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Patent number: 7738220Abstract: A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving laType: GrantFiled: July 17, 2007Date of Patent: June 15, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Yuzo Kamiguchi, Katsuhiko Koui, Shin-ichi Nakamura, Hitoshi Iwasaki, Kazuhiro Saito, Hiromi Fuke, Masatoshi Yoshikawa, Susumu Hashimoto, Masashi Sahashi
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Patent number: 7719800Abstract: An example magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.Type: GrantFiled: December 26, 2006Date of Patent: May 18, 2010Assignees: Kabuhsiki Kaisha Toshiba, TDK CorporationInventors: Susumu Hashimoto, Hiromi Fuke, Hitoshi Iwasaki, Masaaki Doi, Kousaku Miyake, Masashi Sahashi
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Publication number: 20100079918Abstract: A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer.Type: ApplicationFiled: September 18, 2009Publication date: April 1, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7593195Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: December 12, 2006Date of Patent: September 22, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
Publication number: 20090225477Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: ApplicationFiled: May 19, 2009Publication date: September 10, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki FUKUZAWA, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
Publication number: 20090141408Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.Type: ApplicationFiled: February 6, 2009Publication date: June 4, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Publication number: 20090109581Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: ApplicationFiled: December 31, 2008Publication date: April 30, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideaki FUKUZAWA, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi
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Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory
Patent number: 7505234Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.Type: GrantFiled: October 31, 2007Date of Patent: March 17, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Hiromi Fuke, Hitoshi Iwasaki, Masashi Sahashi -
Patent number: 7476414Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.Type: GrantFiled: December 2, 2004Date of Patent: January 13, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koi, Hiromi Fuke, Hiroshi Tomita, Hitoshi Iwasaki, Masashi Sahashi