Abstract: A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

Abstract: A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

Abstract: A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.

Abstract: A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride.

Abstract: A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.

Abstract: A magnetoresistive element has a magnetization pinned layer including a magnetic film a magnetization direction of which is substantially pinned in one direction, a magnetization free layer including a magnetic film a magnetization direction of which is varied depending on an external magnetic field, a composite spacer layer interposed between the magnetization pinned layer and the magnetization free layer, and including an insulating portion and a magnetic metal portion, and a pair of electrodes configured to supply a sense current in a direction perpendicular to planes of the magnetization pinned layer, the composite spacer layer and the magnetization free layer, in which the magnetic film included in the magnetization pinned layer and being in contact with the composite spacer layer has a bcc structure.

Abstract: Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween.

Abstract: A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.

Abstract: A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.

Abstract: A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.

Abstract: Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.