Abstract: An exchange-coupling film has an antiferromagnetic film consisting of an antiferromagnetic alloy such as an RMn alloy or an RMnFe alloy (R is at least one kind of element selected from Ir, Rh, Pt, Au, Ag, Co, Pd, Ni, Cr, Ge, Ru and Cu) and a ferromagnetic film stacked with the antiferromagnetic film. The antiferromagnetic film is oriented in its plane. Further, the antiferromagnetic film has a large grain diameter of such as 5 nm or more. The antiferromagnetic film can be obtained by forming a film with an alloy target of which oxygen content is 1% by weight or less. An exchange-coupling film using such an antiferromagnetic film has exchange-coupling force enough large at room temperature and high temperature region together with excellent corrosion resistance or heat resistance. The exchange-coupling film is provided with an electrode for energizing an electric current to the ferromagnetic film and is used as, for example, a spin valve type magneto-resistance effect element.

Abstract: A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer.

Abstract: A magnetoresistive head is disclosed which uses a crystalline soft magnetic film as an undercoat for a giant magnetoresistive film provided with at least one pair of ferro-magnetic films opposed to each other across a nonmagnetic intermediate layer or for an anisotropically magnetoresistive film. The crystalline soft magnetic film comprises a film which has as a main component thereof at least one element selected from the group consisting of Ni, Fe, and Co and simultaneously incorporates therein at least one element selected from the group consisting of Nb, Mo, V, W, Ti, Zr, Hf, and Ta and at least one element selected from the group consisting of Cr, Rh, Os, Re, Si, Al, Be, Ga, and Ge.

Abstract: The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

Abstract: An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.

Abstract: A thin film magnetic element is disclosed which uses a soft magnetic thin film having a composition represented by the general formula:T.sub.100-x-y M.sub.x (AO.sub.v).sub.y(wherein T stands for at least one element selected from the group consisting of Fe and Co, M for at least one element selected from the group consisting of Zr, Hf, Nb, and Y, and A for at least one element selected from the group consisting of Si, Ge, Sn, B, P, and C, and x, y, and v respectively satisfy the expressions, 5.ltoreq.x.ltoreq.20 at. %, 8.ltoreq.y.ltoreq.25 at. %, and 0.ltoreq.v.ltoreq.2), consisting of a homogeneous amorphous phase, and having resistivity of not less than 1000 .mu..OMEGA..multidot.cm. Further, a thin film magnetic element is disclosed which uses a soft magnetic thin film of a microstructure having a composition substantially represented by the general formula, T.sub.100-x-z M.sub.x (AO.sub.v).sub.z (1.ltoreq.z.+-.10 at.

Abstract: An amorphous magnetic thin film possesses as at least part of a thin film forming area a microstructure composed of a first amorphous phase containing at least either of iron and cobalt and bearing magnetism and a second amorphous phase disposed round the first amorphous phase and containing boron and at least one element selected from among the elements of the 4B Group in the Periodic Table of Elements and exhibits uniaxial magnetic anisotropy in the plane of film. The amorphous magnetic thin film possesses soft magnetism concurrently satisfying high saturation magnetization and high resistivity and, at the same time, easily acquires high frequency permeability by applying magnetic field in the hard axis of magnetization. Use of these amorphous magnetic thin films for plane magnetic elements permits the plane magnetic elements to be miniaturized and to be endowed with exalted performance. The amorphous magnetic thin film possesses a composition substantially represented by the formula:(Fe.sub.1-x Co.sub.x).

Abstract: A method of manufacturing a planar inductance element, including the steps of forming a thermal oxide film, a magnetic film, a first insulating interlayer, a planar coil, and a second insulating interlayer on a first semiconductor substrate, forming an insulating film and a magnetic film on a second semiconductor substrate, and adhering the first and the second semiconductor substrates such that the coil side of the first semiconductor substrate faces the magnetic film side of the second semiconductor substrate. According to this method, a stress generated by stacking thin films can be reduced compared with that of a conventional inductance element. Therefore, a high-frequency loss can be reduced, and a quality coefficient Q can be increased.