Patents by Inventor Hiromi Yuasa
Hiromi Yuasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10342439Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.Type: GrantFiled: May 8, 2018Date of Patent: July 9, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Alexander Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami
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Patent number: 10082430Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.Type: GrantFiled: August 8, 2017Date of Patent: September 25, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Akihiko Enamito, Osamu Nishimura, Michiko Hara, Hiromi Yuasa, Yoshihiko Fuji, Masayuki Kii, Eizo Fujisawa
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Publication number: 20180256035Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.Type: ApplicationFiled: May 8, 2018Publication date: September 13, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Alexander Devin GIDDINGS, Hideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami
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Patent number: 9999356Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.Type: GrantFiled: July 30, 2015Date of Patent: June 19, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Alexander Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami
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Publication number: 20170356810Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.Type: ApplicationFiled: August 8, 2017Publication date: December 14, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Hideaki FUKUZAWA, Akihiko ENAMITO, Osamu NISHIMURA, Michiko HARA, Hiromi YUASA, Yoshihiko FUJI, Masayuki KII, Eizo FUJISAWA
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Patent number: 9759618Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.Type: GrantFiled: October 29, 2014Date of Patent: September 12, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Akihiko Enamito, Osamu Nishimura, Michiko Hara, Hiromi Yuasa, Yoshihiko Fuji, Masayuki Kii, Eizo Fujisawa
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Publication number: 20170238820Abstract: A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.Type: ApplicationFiled: April 10, 2017Publication date: August 24, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi YUASA, Hideaki Fukuzawa, Yoshihiko Fuji, Alexander Devin Giddings, Michiko Hara, Shuichi Murakami
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Patent number: 9618411Abstract: A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.Type: GrantFiled: January 24, 2013Date of Patent: April 11, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi Yuasa, Hideaki Fukuzawa, Yoshihiko Fuji, Michiko Hara, Yoshihiro Higashi, Tomohiko Nagata, Akio Hori
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Patent number: 9607645Abstract: A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.Type: GrantFiled: March 9, 2015Date of Patent: March 28, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa
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Patent number: 9478355Abstract: A method is described for forming a confining current path (CCP) spacer in a CPP-GMR sensor. A first Cu spacer, an amorphous metal/alloy layer such as Hf, a second Cu spacer, and an oxidizable layer such as Al, Mg, or AlCu are sequentially deposited on a ferromagnetic layer. A pre-ion treatment (PIT) and ion assisted oxidation (IAO) transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. A third Cu layer is deposited on the second metal oxide template. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more.Type: GrantFiled: February 23, 2015Date of Patent: October 25, 2016Assignees: TDK Corporation, Kabushiki Kaisha ToshibaInventors: Kunliang Zhang, Min Li, Yue Liu, Hideaki Fukuzawa, Hiromi Yuasa
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Patent number: 9435868Abstract: According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.Type: GrantFiled: March 17, 2015Date of Patent: September 6, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Michiko Hara, Hiromi Yuasa
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Publication number: 20160072038Abstract: A thermoelectric conversion element comprises: a substrate; an insulating ferromagnetic layer provided on the substrate and having a magnetization fixed in one direction; and a nonmagnetic metal layer provided on the ferromagnetic layer. The substrate is configured from an organic type material whose thermal conductivity is not less than 0.15 W/Km and not more than 1.5 W/Km, whose Young's modulus is not less than 0.2 Gpa and not more than 7 Gpa, and whose film thickness is 100 ?m or less.Type: ApplicationFiled: September 1, 2015Publication date: March 10, 2016Inventors: Hiromi YUASA, Masaki KADO
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Publication number: 20150338292Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.Type: ApplicationFiled: July 30, 2015Publication date: November 26, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Alexander Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Mlchiko Hara, Shuichi Murakami
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Patent number: 9177574Abstract: According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.Type: GrantFiled: August 26, 2014Date of Patent: November 3, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa, Michiko Hara, Shuichi Murakami
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Publication number: 20150270469Abstract: A thermoelectric converting element includes a substrate, a nonmagnetic metal layer, and an insulated ferromagnetic layer provided between the substrate and the nonmagnetic metal layer and having a magnetization fixed in a plane in a direction and including a hard magnetic material.Type: ApplicationFiled: March 17, 2015Publication date: September 24, 2015Inventors: Hiromi YUASA, Masaki KADO
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Publication number: 20150263258Abstract: A thermoelectric conversion element comprises a substrate, an insulating ferromagnetic layer, and a nonmagnetic metal layer. The insulating ferromagnetic layer is formed upwardly on the substrate and has a magnetization fixed in a certain direction. At least one trench is formed on a surface of this insulating ferromagnetic layer so as to extend in a direction along the surface of the insulating ferromagnetic layer. The nonmagnetic metal layer is formed conforming to a shape of the trench, upwardly on the insulating ferromagnetic layer including on a wall surface of the trench.Type: ApplicationFiled: January 22, 2015Publication date: September 17, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Masaki KADO, Yuuzo KAMIGUCHI, Hiromi YUASA
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Patent number: 9131856Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.Type: GrantFiled: March 19, 2014Date of Patent: September 15, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Alexander Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami
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Publication number: 20150243315Abstract: A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.Type: ApplicationFiled: March 9, 2015Publication date: August 27, 2015Inventors: Hideaki FUKUZAWA, Hiromi Yuasa
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Patent number: 9087533Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.Type: GrantFiled: December 12, 2014Date of Patent: July 21, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Mariko Shimizu, Katsuhiko Koui, Shuichi Murakami, Hiromi Yuasa
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Patent number: 9087532Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.Type: GrantFiled: December 12, 2014Date of Patent: July 21, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Mariko Shimizu, Katsuhiko Koui, Shuichi Murakami, Hiromi Yuasa