Patents by Inventor Hiromi Yuasa
Hiromi Yuasa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8199429Abstract: A magnetic recording head includes: a main magnetic pole containing a ferromagnetic layer; a main magnetic pole-magnetization fixing portion containing an antiferromagnetic layer in contact with at least one side surface of the main magnetic pole; a heater for heating at least the main magnetic pole so that a magnetic interaction between the main magnetic pole and the main magnetic pole-magnetization fixing portion can be decreased; and a magnetic field generator for generating a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.Type: GrantFiled: March 18, 2008Date of Patent: June 12, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Tomoko Taguchi, Hideaki Fukuzawa
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Publication number: 20120129008Abstract: A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.Type: ApplicationFiled: January 27, 2012Publication date: May 24, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideaki FUKUZAWA, Masahiro TAKASHITA, Hiromi YUASA, Yoshihiko FUJI, Hitoshi IWASAKI
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Patent number: 8184408Abstract: A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.Type: GrantFiled: January 30, 2009Date of Patent: May 22, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Shuichi Murakami, Hideaki Fukuzawa, Hiromi Yuasa, Yoshihiko Fuji
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Patent number: 8184410Abstract: An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc(where 5?a?68, 10?b?73, and 22?c?85). M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.Type: GrantFiled: September 24, 2007Date of Patent: May 22, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Yoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa
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Patent number: 8169752Abstract: In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and a spacer layer, which is located between the fixed magnetization layer and the free magnetization layer, with an insulating layer and a metallic layer penetrating through the insulating layer, the spacer layer is formed by forming a first metallic layer; forming, on the first metallic layer, a second metallic layer to be converted into a portion of the insulating layer; performing a first conversion treatment so as to convert the second metallic layer into the portion of said insulating layer and to form a portion of the metallic layer penetrating through the insulating layer; forming, on the insulating layer and the metallic layer formed through the first conversion treatment, a third metallic layer to be converted into the other portionType: GrantFiled: July 6, 2007Date of Patent: May 1, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Yoshihiko Fuji
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Patent number: 8153188Abstract: The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.Type: GrantFiled: October 9, 2008Date of Patent: April 10, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Katsuhiko Koui, Hiromi Yuasa, Susumu Hashimoto, Hitoshi Iwasaki
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Publication number: 20120079887Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.Type: ApplicationFiled: May 18, 2011Publication date: April 5, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Alexander Devin Giddings, Hideaki Fukuzawa, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami
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Patent number: 8130477Abstract: A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.Type: GrantFiled: September 10, 2010Date of Patent: March 6, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Masahiro Takashita, Hiromi Yuasa, Yoshihiko Fuji, Hitoshi Iwasaki
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Publication number: 20120050920Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.Type: ApplicationFiled: July 19, 2011Publication date: March 1, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Akihiko Takeo, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami, Hideaki Fukuzawa
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Patent number: 8111488Abstract: A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.Type: GrantFiled: June 11, 2008Date of Patent: February 7, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Yoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa
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Patent number: 8111489Abstract: An example method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.Type: GrantFiled: December 17, 2008Date of Patent: February 7, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Yoshihiko Fuji, Hideaki Fukuzawa, Hiromi Yuasa
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Publication number: 20120015214Abstract: A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Yoshihiko FUJI, Hideaki Fukuzawa, Hiromi Yuasa
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Patent number: 8085511Abstract: A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer.Type: GrantFiled: September 23, 2008Date of Patent: December 27, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Yuzo Kamiguchi, Masatoshi Yoshikawa, Katsuhiko Koui, Hitoshi Iwasaki, Tomohiko Nagata, Takeo Sakakubo, Masashi Sahashi
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Publication number: 20110295128Abstract: A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.Type: ApplicationFiled: March 11, 2011Publication date: December 1, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Hiromi Yuasa, Hideaki Fukuzawa, Yoshihiko Fuji, Alexander Devin Giddings, Michiko Hara, Shuichi Murakami
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Publication number: 20110265325Abstract: A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.Type: ApplicationFiled: July 11, 2011Publication date: November 3, 2011Inventors: Kunliang Zhang, Min Li, Yue Liu, Hideaki Fukuzawa, Hiromi Yuasa
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Patent number: 8048492Abstract: A magnetoresistive effect element is produced by forming a first magnetic layer, a spacer layer including an insulating layer and a conductive layer which penetrates through the insulating layer and passes a current, on the first magnetic layer, and a second magnetic layer all of which or part of which is treated with ion, plasma or heat, on the formed spacer layer.Type: GrantFiled: December 20, 2006Date of Patent: November 1, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Hideaki Fukuzawa, Hiromi Yuasa, Yoshihiko Fuji, Hitoshi Iwasaki
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Publication number: 20110261478Abstract: According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni.Type: ApplicationFiled: April 21, 2011Publication date: October 27, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akihiko Takeo, Yoshihiko Fuji, Hiromi Yuasa, Michiko Hara, Shuichi Murakami, Hideaki Fukuzawa
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Publication number: 20110228427Abstract: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal.Type: ApplicationFiled: September 10, 2010Publication date: September 22, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiromi YUASA, Shuichi Murakami, Yoshihiko Fuji, Hideaki Fukuzawa
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Publication number: 20110205669Abstract: According to one embodiment, a method for manufacturing a magneto-resistance effect element is disclosed. The element has first and second magnetic layers, and an intermediate layer provided between the first and second magnetic layers. The intermediate layer has an insulating layer and a conductive portion penetrating through the insulating layer. The method can include forming a structure body having the insulating layer and the conductive portion, performing a first treatment including irradiating the structure body with at least one of ion including at least one selected from the group consisting of argon, xenon, helium, neon and krypton and a plasma including at least one selected from the group, and performing a second treatment including at least one of exposure to gas containing oxygen or nitrogen, irradiation of ion beam containing oxygen or nitrogen, irradiation of plasma containing oxygen or nitrogen, to the structure body submitted to the first treatment.Type: ApplicationFiled: September 14, 2010Publication date: August 25, 2011Applicants: Kabushiki Kaisha Toshiba, TDK CORPORATIONInventors: Shuichi Murakami, Hiromi Yuasa, Michiko Hara, Yoshihiko Fuji, Hideaki Fukuzawa, Kunliang Zhang, Min Li
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Patent number: 7978442Abstract: A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.Type: GrantFiled: October 3, 2007Date of Patent: July 12, 2011Assignees: TDK Corporation, Kabushiki Kaisha ToshibaInventors: Kunliang Zhang, Min Li, Yue Liu, Hideaki Fukuzawa, Hiromi Yuasa