Abstract: According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

Abstract: A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. A thin Cu layer may be inserted between the amorphous layer and oxidizable layer before the PIT and IAO processes are performed.

Abstract: A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.

Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.

Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.

Abstract: According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.

Abstract: According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

Abstract: A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.

Abstract: A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.

Abstract: A thermoelectric converting thin line includes a thin line extending in one direction, a first ferromagnetic layer formed on a side of the thin line having a magnetization fixed in a plane in a direction intersecting with a direction along which the thin line extends, and a first nonmagnetic metal layer formed on the first ferromagnetic layer.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.

Abstract: A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.

Abstract: According to one embodiment, the magnetic recording head comprises a cooling/heating material between a laminated oscillator and a main magnetic pole, the cooling/heating material including the following layers laminated from the laminated oscillator side in the following order, a first thermoelectric material layer having the same junction area as that of the laminated oscillator, a first metal material layer having the same junction area as that of the laminated oscillator, a second metal material layer having the same junction area as that of the main magnetic pole, and a second thermoelectric material layer having the same junction area as that of the main magnetic pole.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.

Abstract: According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

Abstract: A thermoelectric conversion element includes a substrate, a non-magnetic metal layer, an insulated ferromagnetic layer, and a metallic ferromagnetic layer. The insulated ferromagnetic layer is provided between the substrate and the non-magnetic metal layer. Magnetization of the insulated ferromagnetic layer is fixed in one direction. The metallic ferromagnetic layer is provided between the insulated ferromagnetic layer and the non-magnetic metal layer.

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.