Patents by Inventor Hiromitsu Kato
Hiromitsu Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230062595Abstract: A semiconductor device according to an embodiment includes a semiconductor chip, a semiconductor element, a stacked body, and a structure body. The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor element is provided in the center of the semiconductor chip when viewed from the normal direction of the first surface. The stacked body is provided at the outer peripheral end portion of the semiconductor chip when viewed from the normal direction and includes a plurality of first layers and a plurality of second layers alternately stacked in the normal direction. The structure body is provided in at least a part between the semiconductor element and the side surface when viewed from the normal direction and extending from a position higher than the stacked body to a position lower than the stacked body.Type: ApplicationFiled: March 10, 2022Publication date: March 2, 2023Applicant: Kioxia CorporationInventors: Naoyuki KONDO, Tsutomu TAKAHASHI, Shinichi MARUYAMA, Hiromitsu HARASHIMA, Yuuichi TATSUMI, Yoshiko KATO
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Patent number: 11428327Abstract: There is provided a check valve capable of effectively suppressing the generation of chattering. The check valve includes: a housing including an inlet channel, a valve chest, and an outlet channel; a seat member provided around the inlet channel, the seat member including a seat portion; a valve element pressed against the seat portion to close the inlet channel; a biasing member configured to push the valve element toward a valve seat; a guide portion provided at the housing and configured to guide the valve element when the valve element moves in an axial direction; and a damper chamber communicating with the valve chest through a space between the valve element and the guide portion, the damper chamber being configured to attenuate axial moving force of the valve element. The biasing member is arranged in the valve chest.Type: GrantFiled: March 25, 2019Date of Patent: August 30, 2022Assignee: KAWASAKI JUKOGYO KABUSHIKI KAISHAInventors: Yuki Kato, Noritaka Nakamura, Kodai Kato, Yukinobu Sakata, Hiromitsu Kiyose
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Patent number: 11335779Abstract: A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.Type: GrantFiled: February 28, 2019Date of Patent: May 17, 2022Assignee: KYOTO UNIVERSITYInventors: Norikazu Mizuochi, Hiromitsu Kato, Toshiharu Makino, Satoshi Yamasaki
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Patent number: 11180865Abstract: It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.Type: GrantFiled: February 2, 2018Date of Patent: November 23, 2021Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED, INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION, KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Satoshi Yamasaki, Norio Tokuda
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Patent number: 11066757Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: GrantFiled: November 2, 2018Date of Patent: July 20, 2021Assignees: Shin-Etsu Chemical Co., Ltd., National Institute of Advanced Industrial Science and Technology, National University Corporation Kanazawa UniversityInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20200411646Abstract: A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.Type: ApplicationFiled: February 28, 2019Publication date: December 31, 2020Applicant: KYOTO UNIVERSITYInventors: Norikazu MIZUOCHI, Hiromitsu KATO, Toshiharu MAKINO, Satoshi YAMASAKI
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Patent number: 10324142Abstract: A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is ±10 degrees or less against the {111} face, and a principal axis of the NV center is a <111> axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV?) of having a negative electric charge, and spin states of the NV? centers to be aligned in one direction.Type: GrantFiled: January 19, 2015Date of Patent: June 18, 2019Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Mutsuko Hatano, Takayuki Iwasaki, Norikazu Mizuochi, Toshiharu Makino, Hiromitsu Kato, Satoshi Yamasaki
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Patent number: 10253426Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: GrantFiled: February 28, 2017Date of Patent: April 9, 2019Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Publication number: 20190093253Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: ApplicationFiled: November 2, 2018Publication date: March 28, 2019Applicants: SHIN-ETSU CHEMICAL CO., LTD., National Institute of Advanced Industrial Science and Technology, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Patent number: 10100435Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.Type: GrantFiled: February 28, 2017Date of Patent: October 16, 2018Assignees: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi Noguchi, Shozo Shirai, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Hiroyuki Kawashima, Daisuke Kuwabara, Satoshi Yamasaki, Daisuke Takeuchi, Norio Tokuda, Takao Inokuma, Tsubasa Matsumoto
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Patent number: 10066317Abstract: A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.Type: GrantFiled: September 17, 2014Date of Patent: September 4, 2018Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hitoshi Noguchi, Daisuke Takeuchi, Satoshi Yamasaki, Masahiko Ogura, Hiromitsu Kato, Toshiharu Makino, Hideyo Okushi
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Publication number: 20180223447Abstract: It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.Type: ApplicationFiled: February 2, 2018Publication date: August 9, 2018Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Satoshi YAMASAKI, Norio TOKUDA
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Publication number: 20170247814Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Publication number: 20170247811Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.Type: ApplicationFiled: February 28, 2017Publication date: August 31, 2017Applicants: SHIN-ETSU CHEMICAL CO., LTD., National Institute of Advanced Industrial Science and Technology, NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITYInventors: Hitoshi NOGUCHI, Shozo SHIRAI, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Hiroyuki KAWASHIMA, Daisuke KUWABARA, Satoshi YAMASAKI, Daisuke TAKEUCHI, Norio TOKUDA, Takao INOKUMA, Tsubasa MATSUMOTO
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Patent number: 9711638Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a ? dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.Type: GrantFiled: November 25, 2014Date of Patent: July 18, 2017Assignee: DENSO CORPORATIONInventors: Kazuhiro Oyama, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Daisuke Takeuchi, Satoshi Yamasaki, Norio Tokuda, Takao Inokuma, Takuma Minamiyama
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Patent number: 9634190Abstract: A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type ? layers (102), a p-type or n-type ? layer (103), and one or a plurality of n-type ? layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the ? layer (102) which injects an electric current; a second electrode (107) provided on the ? layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.Type: GrantFiled: March 17, 2014Date of Patent: April 25, 2017Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Toshiharu Makino, Satoshi Yamasaki, Hideyo Ookushi, Masahiko Ogura, Hiromitsu Kato, Daisuke Takeuchi
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Patent number: 9530630Abstract: A thermionic power generator includes an emitter generating thermions and a collector collecting the thermions. The emitter includes an emitter substrate having an electric conductivity, a low resistance layer stacked to the emitter substrate and made of an n-type diamond semiconductor that includes phosphorus as a donor, and an electron emission layer stacked to the low resistance layer and made of an n-type diamond semiconductor that includes nitrogen as a donor. The collector includes a collector substrate having an electric conductivity and is disposed opposite to the emitter via a clearance. The electron emission layer has a thickness equal to or less than 40 nm.Type: GrantFiled: September 9, 2014Date of Patent: December 27, 2016Assignees: DENSO CORPORATION, National Institute of Advanced Industrial Science and TechnologyInventors: Mitsuhiro Kataoka, Yuji Kimura, Susumu Sobue, Daisuke Takeuchi, Hiromitsu Kato, Satoshi Yamasaki
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Publication number: 20160372590Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a ? dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.Type: ApplicationFiled: November 25, 2014Publication date: December 22, 2016Inventors: Kazuhiro OYAMA, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Daisuke TAKEUCHI, Satoshi YAMASAKI, Norio TOKUDA, Takao INOKUMA, Takuma MINAMIYAMA
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Publication number: 20160334474Abstract: A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is ±10 degrees or less against the {111} face, and a principal axis of the NV center is a <111> axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV?) of having a negative electric charge, and spin states of the NV? centers to be aligned in one direction.Type: ApplicationFiled: January 19, 2015Publication date: November 17, 2016Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Mutsuko HATANO, Takayuki IWASAKI, Norikazu MIZUOCHI, Toshiharu MAKINO, Hiromitsu KATO, Satoshi YAMASAKI
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Patent number: 9478619Abstract: The present invention provides a diamond semiconductor device which includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.Type: GrantFiled: August 8, 2013Date of Patent: October 25, 2016Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano, Takayuki Iwasaki