Abstract: A centering device for a plate-shaped workpiece comprises: a table (21) having a conveyor mechanism (23) for conveying a plate-shaped workpiece (10) in the horizontal direction; a camera (56) for taking an image of the plate-shaped workpiece (10) placed on the table (21); a table movement mechanism (28) for moving the table (21) horizontally in the direction orthogonal to the conveyance direction; a table rotation mechanism (60) for rotating the table (21) about a vertical axis; a computation unit (58) for comparing target central position information and information acquired by the camera (56) and computing the movement amount of the conveyor mechanism (23), the movement amount of the table movement mechanism (28), and the movement amount of the table rotation mechanism (60); and a control unit (59) for controlling the conveyor mechanism (23), the table movement mechanism (28), and the table rotation mechanism (60) on the basis of the movement amounts calculated by the computation unit (58).

Abstract: A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type ? layers (102), a p-type or n-type ? layer (103), and one or a plurality of n-type ? layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the ? layer (102) which injects an electric current; a second electrode (107) provided on the ? layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.

Abstract: A centering device for a plate-shaped workpiece comprises: a table (21) having a conveyor mechanism (23) for conveying a plate-shaped workpiece (10) in the horizontal direction; a camera (56) for taking an image of the plate-shaped workpiece (10) placed on the table (21); a table movement mechanism (28) for moving the table (21) horizontally in the direction orthogonal to the conveyance direction; a table rotation mechanism (60) for rotating the table (21) about a vertical axis; a computation unit (58) for comparing target central position information and information acquired by the camera (56) and computing the movement amount of the conveyor mechanism (23), the movement amount of the table movement mechanism (28), and the movement amount of the table rotation mechanism (60); and a control unit (59) for controlling the conveyor mechanism (23), the table movement mechanism (28), and the table rotation mechanism (60) on the basis of the movement amounts calculated by the computation unit (58).

Abstract: In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor.

Abstract: The present invention provides a diamond semiconductor device which includes: a diamond substrate; a diamond step section disposed over substrate surface of the diamond substrate having a {001} crystal face to rise substantially perpendicularly to substrate surface; an n-type phosphorus-doped diamond region; and a diamond insulation region. In the diamond step section, a first step section having a {110} crystal face over a side surface is integrated with a second step section having a {100} crystal face over a side surface. The phosphorus-doped diamond region is formed by crystal growth started from base angle of the step shape of the first step section over the side surface of the first step section and substrate surface of the diamond substrate as growth base planes. The diamond insulation region is formed by crystal growth over the side surface of the second step section and substrate surface of the diamond substrate as growth base planes.

Abstract: A thermionic power generator includes an emitter generating thermions and a collector collecting the thermions. The emitter includes an emitter substrate having an electric conductivity, a low resistance layer stacked to the emitter substrate and made of an n-type diamond semiconductor that includes phosphorus as a donor, and an electron emission layer stacked to the low resistance layer and made of an n-type diamond semiconductor that includes nitrogen as a donor. The collector includes a collector substrate having an electric conductivity and is disposed opposite to the emitter via a clearance. The electron emission layer has a thickness equal to or less than 40 nm.

Abstract: A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Abstract: An on-vehicle gateway device connected to an information system network and a control system network of a vehicle executes monitoring the status of an information system via an information system access circuit taking charge of message transmission and reception to and from the information system network, and an information system management step to manage information acquired by the information system monitoring, monitoring the status of a control system via a control system access circuit taking charge of message transmission and reception to and from the control system network, and a control system management step to manage information acquired by the control system monitoring, managing policies for access control by the access control circuit controlling data flows between the information system access circuit and the control system access circuit, and determining whether or not to update the policies managed by policy management and to update the policies.

Abstract: The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the <111> direction while doping with impurities and burying the recessed portion.

Abstract: Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

Abstract: The intersystem coordination apparatus includes: a storage unit configured to store a pattern of a communication protocol between the system and the other system, a protocol definition in which system configurations of these systems and network configurations, a non-functioning requirement which is a unique requirement of a predetermined application for the system to access the other system by using the predetermined application, and a plurality of modules configured to execute the application in accordance with the protocol definition and the non-functioning requirement; an application processing unit configured to execute the predetermined application; and a combination processing unit configured to select a module required to execute processing by the application from the plurality of modules based on the non-functioning requirement and a requirement value required to perform processing between these systems determined based on the communication protocol pattern, the system configuration, and the network c

Abstract: A terminal to be connected to a network has: a data acquisition unit for acquiring first data from the network; an extraction unit for extracting second data regarding a physical quantity in accordance with the first data; a random number generation unit for generating a random number in accordance with the second data; and an enciphering unit for enciphering the first data in accordance with the random number. The terminal has further a counter unit for counting the number of the first data, wherein the random number generation unit generates a random number in accordance with the second data or a value counted by the counter unit.

Abstract: An on-vehicle gateway device connected to an information system network and a control system network of a vehicle executes monitoring the status of an information system via an information system access circuit taking charge of message transmission and reception to and from the information system network, and an information system management step to manage information acquired by the information system monitoring, monitoring the status of a control system via a control system access circuit taking charge of message transmission and reception to and from the control system network, and a control system management step to manage information acquired by the control system monitoring, managing policies for access control by the access control circuit controlling data flows between the information system access circuit and the control system access circuit, and determining whether or not to update the policies managed by policy management and to update the policies.

Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Abstract: An on-vehicle gateway device connected to an information system network and a control system network of a vehicle executes monitoring the status of an information system via an information system access circuit taking charge of message transmission and reception to and from the information system network, and an information system management step to manage information acquired by the information system monitoring, monitoring the status of a control system via a control system access circuit taking charge of message transmission and reception to and from the control system network, and a control system management step to manage information acquired by the control system monitoring, managing policies for access control by the access control circuit controlling data flows between the information system access circuit and the control system access circuit, and determining whether or not to update the policies managed by policy management and to update the policies.

Abstract: There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

Abstract: The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the <111> direction while doping with impurities and burying the recessed portion.

Abstract: In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor.

Abstract: In a navigation system integrated with a diagnostic device, an arithmetic and control unit for diagnostic communication makes an inquiry to electronic control units, such as an engine control unit, a transmission control unit and a brake control unit connected a CAN, about data which is used for the diagnosis of trouble causes based on setting information stored in a memory through diagnostic communication. An arithmetic and control unit for navigation system receives messages responding to the inquiry to sift through the data to be collected based on the setting information in the memory and stores the collected information in a hard disk drive device. The setting information is updated by making an inquiry to an external center via a mobile communication network.