Abstract: An impedance matching film 10 includes a metallic element and a non-metallic element. The impedance matching film 10 has a thickness of 10 to 200 nm. The impedance matching film 10 has a sheet resistance of 200 ?/? or more. In the impedance matching film 10, the content of an oxygen atom is less than 50% in terms of the number of atoms.

Abstract: The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

Abstract: Provided is an electromagnetic wave transmissive metal member capable of being easily produced at a low production cost, with both a metallic luster and an electromagnetic wave transmissibility, an article using the electromagnetic wave transmissive metal member, and a production method for an electromagnetic wave transmissive metal film. The electromagnetic wave transmissive metal member comprises a metal layer and a crack layer, wherein the metal layer and the crack layer have, in their respective planes, a plurality of linear cracks extending substantially parallel to each other. The linear cracks in the metal layer and the linear cracks in the crack layer penetrate through their respective layers in a thickness direction, and are continuous with each other in the thickness direction.

Abstract: A heater (1a) includes a substrate (10), a heating element (20) that is a transparent conductive film (20), an intermediate layer (30), and at least a pair of power supply electrodes (40). The intermediate layer (30) is disposed between the substrate (10) and the transparent conductive film (20), and has a first principal surface (31) positioned closer to the transparent conductive film (20) than the substrate (10). The pair of power supply electrodes (40) are in contact with the transparent conductive film (20). The intermediate layer (30) contains an organic polymer (32) forming a cured product and particles (34) of silica or a metal oxide dispersed in the cured product. The transparent conductive film (20) has a surface having an arithmetic average roughness Ra, specified in JIS B 0601:2013, of 7.0 nm or less.

Abstract: A piezo electric device having a configuration that can suppress the formation of a leakage path between electrodes that sandwich a piezoelectric layer and also reduce deterioration in the piezoelectric characteristics, is provided. The piezoelectric device has a first electrode, a piezoelectric layer, and a second electrode stacked in this order on a substrate. The first electrode and the second electrode are arranged so as not to overlap each other in the stacking direction.

Abstract: A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

Abstract: An electromagnetic wave absorber (1a) includes a resistive layer (10), an electrically conductive layer (20) and a dielectric layer (30). The electrically conductive layer (20) has a sheet resistance lower than a sheet resistance of the resistive layer (10). The dielectric layer (30) is disposed between the resistive layer (10) and the electrically conductive layer (20). The electromagnetic wave absorber (1a) has a first slit (15). The first slit (15) extends, in the resistive layer (10), from a first principal surface (10a) distal to the dielectric layer (30) toward the dielectric layer (30) in a direction perpendicular to the first principal surface (10a) and divides the resistive layer (10) into a plurality of first blocks (17). Each of the first blocks (17) has a minimum dimension (D1) of 2 mm or more at the first principal surface (10a).

Abstract: An impedance matching film 10 includes a mixture containing indium oxide and tin oxide and being a main component of the impedance matching film, the mixture having an amorphous structure. The impedance matching film 10 for impedance matching has a Hall mobility of 5 cm2/(V·s) or more. The impedance matching film 10 has a thickness of 16 nm or more and less than 100 nm.

Abstract: For a piezoelectric device, an optical characteristic and/or a piezoelectric characteristic is improved. A piezoelectric device has a first electrode layer, a second electrode layer, and a piezoelectric layer provided between the first electrode layer and the second electrode layer, wherein the piezoelectric layer is formed of a wurtzite crystal material as a main component, to which one or more elements is/are added, said one or more elements being transparent when turned into an oxide, and wherein a haze value is 3% or less, and transmittance with respect to light having a wavelength of 380 nm is 50% or more.

Abstract: A radio wave absorber (la) includes a resistive layer (20), an electrical conductor (30), and a dielectric layer (10). The resistive layer (20) includes indium tin oxide as a main component. The electrical conductor (30) reflects a radio wave. The dielectric layer (10) is disposed between the resistive layer (20) and the electrical conductor (30) in the thickness direction of the resistive layer (20). The dielectric layer (10) is formed of a polymer. The content of tin oxide in the indium tin oxide included in the resistive layer (20) is more than 0 weight % and less than 20 weight %. The number of hydrogen atoms included in the resistive layer (20) is 5% or more of the total number of indium atoms, tin atoms, oxygen atoms, and hydrogen atoms included in the resistive layer (20).

Abstract: For the purpose of providing an electromagnetic wave absorber usable for radar having a high resolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

Abstract: For the purpose of providing an electromagnetic wave absorber usable for radar having a high revolution and sufficiently adaptable to a plurality of radars different in frequency, the bandwidth of a frequency band in which an electromagnetic wave absorption amount is not less than 20 dB is not less than 2 GHz, within a frequency band of 60 to 90 GHz.

Abstract: A heater (1a) includes a substrate (10), a transparent conductive oxide layer (20), a first power supply electrode (31), and a second power supply electrode (32). The ratio of the sum of the electric resistance of the first power supply electrode (31) in a particular direction and the electric resistance of the second power supply electrode (32) in the particular direction to the electric resistance of the transparent conductive oxide layer (20) between the first power supply electrode (31) and the second power supply electrode (32) is 45% or less. The transparent conductive oxide layer (20) has a thickness from 20 to 250 nm and is formed of a material having a specific resistance from 1.4×10?4 to 3.0×10?4 ?·cm.

Abstract: The object of the present invention is to provide an electromagnetic wave transmissive metallic luster film that has metallic luster and electromagnetic wave transmitting property, can be used in scratch-resistant situations and can utilize the original texture of an adherend during use of a product. The present invention relates to an electromagnetic wave transmissive metallic luster film including a substrate film, a metal layer formed on one surface of the substrate film and an adhesive layer formed on the metal layer, wherein the metal layer is a discontinuous layer comprising a metal, and the adhesive layer is a layer comprising a transparent adhesive.

Abstract: A metallic lustrous member with radio wave transmissibility is provided, which is capable of being easily produced, while ensuring a structure in which not only chromium or indium but also any of some other metals such as aluminum is formed as a metal layer on a continuous surface of any of various materials, and also an article using the member is provided. A production method for a metallic lustrous member with radio wave transmissibility, which is capable of easily forming, as a metal layer, not only chromium or indium but also any of some other metals such as aluminum, on a continuous surface of any of various materials. The metallic lustrous member comprises a substrate having radio wave transmissibility, and an aluminum layer formed directly on a continuous surface of the substrate. The aluminum layer has a discontinuous region including a plurality of separated segments which are mutually discontinuous.

Abstract: An electromagnetic wave absorber (1a) includes a resistive layer (10), an electrically conductive layer (20) and a dielectric layer (30). The electrically conductive layer (20) has a sheet resistance lower than a sheet resistance of the resistive layer (10). The dielectric layer (30) is disposed between the resistive layer (10) and the electrically conductive layer (20). The electromagnetic wave absorber (1a) has a first slit (15). The first slit (15) extends, in the resistive layer (10), from a first principal surface (10a) distal to the dielectric layer (30) toward the dielectric layer (30) in a direction perpendicular to the first principal surface (10a) and divides the resistive layer (10) into a plurality of first blocks (17). Each of the first blocks (17) has a minimum dimension (D1) of 2 mm or more at the first principal surface (10a).

Abstract: A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.

Abstract: A lamp reflector (10a) includes a mirror surface (11) and a laminate (12a). The mirror surface (11) is a surface for reflecting light from a light source (30) to guide the light in a predetermined direction. The laminate (12a) covers at least a part of the mirror surface (11) to absorb an electromagnetic wave having a specific frequency of 20 GHz to 90 GHz. The laminate (12a) allows the light from the light source (30) to transmit therethrough toward the mirror surface (11).

Abstract: An electromagnetic wave absorber (1) includes a dielectric layer (10), a resistive layer (20), and an electrically conductive layer (30). The resistive layer (20) is disposed on one principal surface of the dielectric layer (10). The electrically conductive layer (30) is disposed on the other principal surface of the dielectric layer (10) and has a sheet resistance lower than a sheet resistance of the resistive layer (20). The resistive layer (20) has a sheet resistance of 200 to 600?/?. When the resistive layer (20) is subjected to an immersion treatment in which the resistive layer (20) is immersed in a 5 weight % aqueous solution of NaOH for 5 minutes, an absolute value of a difference between a sheet resistance of the resistive layer (20) before the immersion treatment and a sheet resistance of the resistive layer (20) after the immersion treatment is less than 100?/?.