Patents by Inventor Hironobu Shoji

Hironobu Shoji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120326145
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Application
    Filed: September 5, 2012
    Publication date: December 27, 2012
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
  • Patent number: 8264144
    Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: September 11, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada, Satoshi Seo
  • Patent number: 8237248
    Abstract: An object is to provide a highly reliable semiconductor device having resistance to external stress and electrostatic discharge while achieving reduction in thickness and size. Another object is to prevent defective shapes and deterioration in characteristics due to external stress or electrostatic discharge in a manufacture process to manufacture a semiconductor device with a high yield. A first insulator and a second insulator facing each other, a semiconductor integrated circuit and an antenna provided between the first insulator and the second insulator facing each other, a conductive shield provided on one surface of the first insulator, and a conductive shield provided on one surface of the second insulator are provided. The conductive shield provided on one surface of the first insulator and the conductive shield provided on one surface of the second insulator are electrically connected.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: August 7, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiaki Oikawa, Hironobu Shoji, Yutaka Shionoiri, Kiyoshi Kato, Masataka Nakada
  • Patent number: 8183067
    Abstract: A display device which can be manufactured with improved material use efficiency and through a simplified manufacturing process, and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light to remove an irradiated region of the insulating layer so that a first opening is formed in the insulating layer, and the light-absorbing layer is selectively removed by using the insulating layer having the first opening as a mask so that a second opening is formed in the insulating layer and the light-absorbing layer. A conductive film is formed in the second opening to be in contact with the light-absorbing layer, thereby electrically connecting to the light-absorbing layer with the insulating layer interposed therebetween.
    Type: Grant
    Filed: July 26, 2007
    Date of Patent: May 22, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koichiro Tanaka, Hironobu Shoji, Ikuko Kawamata
  • Patent number: 8169588
    Abstract: A flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is provided. A method for manufacturing, with high yield, a flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is also provided. A liquid crystal display device including a first structure body including a first fibrous body and a first organic resin, a second structure body including a second fibrous body and a second organic resin, a liquid crystal interposed between the first and second structure bodies, and a seal member for fixing the first and second structure bodies and for enclosing the liquid crystal. The first and second fibrous bodies are impregnated with the first and second organic resins, respectively, and the first structure body and the second structure body are in contact with each other.
    Type: Grant
    Filed: July 7, 2009
    Date of Patent: May 1, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
  • Patent number: 8148818
    Abstract: A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown of the semiconductor integrated circuit (e.g., malfunction of a circuit and damage to a semiconductor element) due to electrostatic discharge. Further, with use of a pair of insulators between which the semiconductor integrated circuit is sandwiched, a highly reliable semiconductor having resistance can be provided while achieving reduction in the thickness and size. Moreover, also in the manufacturing process, external stress, or defective shapes or deterioration in characteristics resulted from electrostatic discharge are prevented, and thus the semiconductor device can be manufactured with high yield.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: April 3, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshiaki Oikawa, Hironobu Shoji, Yutaka Shionoiri, Kiyoshi Kato, Masataka Nakada
  • Patent number: 8144389
    Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: March 27, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
  • Publication number: 20120045894
    Abstract: When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.
    Type: Application
    Filed: October 28, 2011
    Publication date: February 23, 2012
    Inventors: Shunpei YAMAZAKI, Hironobu SHOJI, Ikuko KAWAMATA
  • Publication number: 20110275191
    Abstract: A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
    Type: Application
    Filed: July 20, 2011
    Publication date: November 10, 2011
    Inventors: Hidekazu Miyairi, Hironobu Shoji, Akihisa Shimomura, Eiji Higa, Tomoaki Moriwaka, Shunpei Yamazaki
  • Patent number: 8048473
    Abstract: When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: November 1, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hironobu Shoji, Ikuko Kawamata
  • Patent number: 8043969
    Abstract: A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: October 25, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Koichiro Tanaka, Hironobu Shoji, Shunpei Yamazaki
  • Patent number: 7993993
    Abstract: The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.
    Type: Grant
    Filed: June 1, 2010
    Date of Patent: August 9, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shinji Maekawa, Shunpei Yamazaki, Hironobu Shoji
  • Patent number: 7994021
    Abstract: A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: August 9, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Hironobu Shoji, Akihisa Shimomura, Eiji Higa, Tomoaki Moriwaka, Shunpei Yamazaki
  • Patent number: 7977669
    Abstract: It is an object of the present invention to provide a high-performance and high reliable semiconductor device and to provide a technique of manufacturing the semiconductor device at low cost with high yield. The semiconductor device is manufactured by steps of forming a first conductive layer, forming a first liquid-repellent layer over the first conductive layer, discharging a composition containing a material for a mask layer over the first liquid-repellent layer to form a mask layer, processing the first liquid-repellent layer with the use of the mask layer, forming a second liquid-repellent layer, forming an insulating layer over the first conductive layer and the second conductive layer, and forming a second conductive layer over the insulating layer.
    Type: Grant
    Filed: February 7, 2006
    Date of Patent: July 12, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mikio Yukawa, Gen Fujii, Hironobu Shoji
  • Patent number: 7955907
    Abstract: An object of the invention is to provide a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, or a conductive film with an easy process, and further, a semiconductor device and a television set having a high throughput or a high yield at low cost and a manufacturing method thereof. One feature of the invention is that a first film pattern is formed by a droplet discharge method, a photosensitive material is discharged or applied to the first film pattern, a mask pattern is formed by irradiating a region where the first film pattern and the photosensitive material are overlapped with a laser beam and by developing, and a second film pattern having a desired shape is formed by etching the first film pattern using the mask pattern as a mask.
    Type: Grant
    Filed: January 24, 2005
    Date of Patent: June 7, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hironobu Shoji, Yasuyuki Arai
  • Patent number: 7943287
    Abstract: An object is to provide a display device that can be manufactured with increased use efficiency of a material by a simplified manufacturing process and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light, so that an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer are removed, and accordingly an opening is formed in the light-absorbing layer and the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing film. The conductive film is formed in the opening so as to be in contact with the exposed light-absorbing layer, so that the light-absorbing layer and the conductive film are electrically connected to each other with the insulating layer interposed therebetween.
    Type: Grant
    Filed: July 26, 2007
    Date of Patent: May 17, 2011
    Assignee: Semiconductor Energy laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koichiro Tanaka, Hironobu Shoji, Yasuyuki Arai
  • Publication number: 20110095298
    Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
    Type: Application
    Filed: January 7, 2011
    Publication date: April 28, 2011
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
  • Patent number: 7869119
    Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
    Type: Grant
    Filed: July 8, 2009
    Date of Patent: January 11, 2011
    Assignee: Semiconductor Energy laborator Co., Ltd.
    Inventors: Yoshiaki Oikawa, Shingo Eguchi, Mitsuo Mashiyama, Masatoshi Kataniwa, Hironobu Shoji, Masataka Nakada
  • Patent number: 7842589
    Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: November 30, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Osamu Nakamura, Hironobu Shoji, Koichiro Tanaka
  • Publication number: 20100289026
    Abstract: When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.
    Type: Application
    Filed: July 27, 2010
    Publication date: November 18, 2010
    Inventors: Shunpei Yamazaki, Hironobu Shoji, Ikuko Kawamata