Abstract: A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

Abstract: An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween.

Abstract: The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.

Abstract: The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.

Abstract: When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

Abstract: A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

Abstract: The present invention discloses a method for manufacturing a display device comprising the steps of forming a first film pattern using a photosensitive material over a substrate, forming a second film pattern in such a way that the first film pattern is exposed by being irradiated with a laser beam, modifying a surface of the second film pattern into a droplet-shedding surface, forming a source electrode and a drain electrode by discharging a conductive material to an outer edge of the droplet-shedding surface by a droplet-discharging method, and forming a semiconductor region, a gate-insulating film, and a gate electrode over the source electrode and the drain electrode.

Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.

Abstract: It is an object of the present invention to control the position in crystal lateral growth of a semiconductor film without making a system cumbersome and complicated. A method for manufacturing a semiconductor device according to the present invention includes the step of forming a semiconductor film over an insulating substrate, forming a reflective film comprising an insulating film on the semiconductor film, exposing a portion of the semiconductor film by patterning of the reflective film, and crystallizing the exposed semiconductor film by irradiating the exposed semiconductor film with laser light while using the patterned reflective film as a mask. In the above-described method according to the present invention, the reflective film has a structure in which an insulating film that has a higher refractive index and an insulating film that has a lower refractive index are stacked alternately.

Abstract: In the present circumstances, a film formation method of using spin coating in a manufacturing process is heavily used. As increasing the substrate size in future, the film formation method of using spin coating becomes at a disadvantage in mass production since a mechanism for rotating a large substrate becomes large, and there is many loss of material solution or waste liquid. According to the present invention, in a manufacturing process of a semiconductor device, a microscopic wiring pattern can be realized by delivering selectively photosensitive conductive material solution by droplet discharging, exposing selectively to laser light or the like, and developing. The present invention can reduce drastically costs since a patterning process can be shortened and an amount of material in a process of forming a conductive pattern can be reduced. Accordingly, the present invention can be applied to manufacture a large substrate.

Abstract: The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.

Abstract: An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

Abstract: The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.

Abstract: An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.

Abstract: The purpose of the invention is to provide a highly reliable photoelectric conversion device having flexibility and resistance to external stress. In the photoelectric conversion device, following are included: a first sealing layer and a second sealing layer that are provided to face each other; and a photoelectric conversion element group which is provided by being interposed between the first sealing layer and second sealing layer that are provided to face each other. The first sealing layer includes a first structure body in which a first fibrous body is impregnated with a first organic resin, the second sealing layer includes a second structure body in which a second fibrous body is impregnated with a second organic resin, and a periphery of the photoelectric conversion element group includes a region where the first sealing layer and second sealing layer that are provided to face each other are attached to each other.

Abstract: A flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is provided. A method for manufacturing, with high yield, a flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is also provided. A liquid crystal display device including a first structure body including a first fibrous body and a first organic resin, a second structure body including a second fibrous body and a second organic resin, a liquid crystal interposed between the first and second structure bodies, and a seal member for fixing the first and second structure bodies and for enclosing the liquid crystal. The first and second fibrous bodies are impregnated with the first and second organic resins, respectively, and the first structure body and the second structure body are in contact with each other.

Abstract: To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

Abstract: According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore, the variation of the impurity concentration due to the fluctuation of the energy density can be suppressed and the variation of the mobility of the semiconductor film can be also suppressed. Moreover, in TFT formed with the semiconductor film, the variation of the on-current in addition to the mobility can be also suppressed. Furthermore, in the present invention, the first laser light converted into the harmonic easily absorbed in the semiconductor film is irradiated to melt the semiconductor film and to increase the absorption coefficient of the fundamental wave.