Abstract: An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a memory cell array having a mat having a plurality of row sections that each include respective prime memory cell rows and a respective redundant memory cell row. The example apparatus may further include a row decoder configured to receive an access command and a prime row address. The row decoder may be configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections.

Abstract: Provided is a clamp system with enhanced functionality achieved by detecting the behavior of an object to be clamped, using a stroke-end position detector that has been used for switching stroke operations. A clamp device 1 has an output member 12 which executes a stroke movement causing a change in the distance by which a coil 15 is inserted into a hole 14 having a bottom. A converter 23 outputs a measurement value of the inductance of the coil 15. The inductance of the coil 15 when a work W has been clamped by the output member 12 is stored in a work clamp point memory 22e, and a clamp area indicating a variation range permitted with respect to a work clamp point is set in a clamp area memory. During processing of the work, a control unit 2 measures the inductance of the coil 15, determines whether the work clamp point is within the range of the clamp area, and, if the range is exceeded, issues a signal indicating an emergency stop.

Abstract: Methods, systems, and devices for command triggered power gating for a memory device are described. Row logic circuitry for a memory array may be powered up (on) or powered down (off) independent of at least some other components of a memory device. For example, the row logic circuitry may be on when a bank of the memory array is an active state but may be off when the bank is in a stand-by or power-down state. Additionally or alternatively, error correction circuitry for a memory array may be powered up (on) or powered down (off) independent of at least some other components of a memory device. For example, the error correction circuitry may be on during an access portion of an access sequence but may otherwise be off.

Abstract: Apparatuses including a level shifter circuit are disclosed. An example apparatus according to the disclosure includes a plurality of array access control circuits and a level shifter circuit. The plurality of array access control circuits receive an access control signal and a respective plurality of section enable signals. An array access control circuit of the plurality of array access control circuits provides a section access control signal responsive to the access control signal when a respective section enable signal is in an active state. The level shifter circuit receives a control signal and provides an access control signal responsive to the first signal. A first logic level of the control signal is represented by a first power supply voltage and a first logic level of the access control signal is represented by a second power supply voltage greater than the first power supply voltage.

Abstract: According to one or more embodiments, an apparatus comprising a plurality of dice latches, dice latch control logic, and a plurality of data input logic is provided. The dice latches are coupled in parallel and latch respective data. The dice latch control logic receives a load control signal and a reset control signal, provides a reset signal and further provides first and second load signals to the dice latches. The reset signal is based on the reset control signal. The first and second load signals are based on the load control signal and the reset control signal. The data input logic each are coupled to a respective one of the dice latches. Each of the data input logic receives a precharge control signal and respective input data and further provides data and complementary data to the respective one of the dice latches.

Abstract: Charge transfer between gate terminals of sub-threshold current reduction circuit (SCRC) transistors and related apparatuses and methods are disclosed. An apparatus includes a first output terminal electrically connected to a pull-up gate terminal of at least one pull-up SCRC transistor and a second output terminal electrically connected to a pull-down gate terminal of at least one pull-down SCRC transistor. The apparatus also includes a first resistive path between a first input terminal and the first output terminal and a second resistive path between the second input terminal and the second output terminal. The apparatus further includes a charge transfer gate electrically connected between the first resistive path and the second resistive path.

Abstract: Apparatuses and methods including dice latches in a semiconductor device are disclosed. Example dice latches have a circuit arrangement that include a reduced number of circuits, such as transistors, and provides a compact layout. Operation of example dice latches and other dice latches may be controlled by separately provided control signals for loading and latching of data, and in some examples, for a reset operation. Example layouts include circuit elements aligned along a direction with at least one other circuit element offset from the other aligned circuit elements.

Abstract: Apparatuses and methods including dice latches in a semiconductor device are disclosed. Example dice latches have a circuit arrangement that include a reduced number of circuits, such as transistors, and provides a compact layout. Operation of example dice latches and other dice latches may be controlled by separately provided control signals for loading and latching of data, and in some examples, for a reset operation. Example layouts include circuit elements aligned along a direction with at least one other circuit element offset from the other aligned circuit elements.

Abstract: Methods, systems, and devices for generating memory array control signals are described. A timing component may be configured to generate signals for operating a memory array. The timing component may include first logic that indicates when input signals are different, second logic that indicates when at least one of the input signals has a particular state, and third logic that indicates when the input signals have the same state. The output of the second logic and third logic may be controllable by other input signals. An output of the timing component may be set by one of the input signals and reset by the other input signals using the first logic, second logic, and third logic.

Abstract: A device may include a level shifter including an at least one input and at least one output. The device may also include a logic circuit coupled to an output of the at least one output of the level shifter and configured to receive a power up reset signal. The logic circuit may be configured to isolate an output of the logic circuit from a supply voltage responsive to the power up reset signal and during at least a portion of a power up sequence. Associated circuits, systems, and methods are also disclosed.

Abstract: Methods, systems, and devices for leakage current reduction in electronic devices are described. Electronic devices may be susceptible to leakage currents when operating in a first mode, such as an inactive (e.g., a standby) mode. To mitigate leakage current, an electronic device may include transistors coupled in cascode configuration where a gate of a drain-side transistor in the cascode configuration is configured to be biased by an adjustable (e.g., a dynamic) control signal. When the transistors are inactive (e.g., “off”), the control signal may be adjusted to prevent leakage associated with the inactive transistors. Further, a source-side transistor in the cascode configuration may be configured to have a high threshold voltage (e.g., relative to the drain-side transistor).

Abstract: An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a row decoder configured to configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections. The row decoder may be further configured to stop an access operation associated with the prime row from proceeding based on a comparison of subset of match signals from either the first or second pluralities of row sections.

Abstract: Apparatuses and methods related to power domain boundary protection in memory. A number of embodiments can include using a voltage detector to monitor a floating power supply voltage used to power a number of logic components while a memory device operates in a reduced power mode, and responsive to the voltage detector detecting that the floating power supply voltage reaches a threshold value while the memory device is in the reduced power mode, providing a control signal to protection logic to prevent a floating output signal driven from one or more of the logic components from being provided across a power domain boundary to one or more of a different number of logic components.

Abstract: A memory mat architecture is presented where a column decoder is disposed within the memory array. The location of the column decoder reduces a distance between the column decoder and a target memory cell and thus reduces a distance that a column select signal travels from the column decoder to the target memory cell. A single predecoder is disposed in a bank controller for the memory array. The column decoder may be disposed in the middle of the memory array or offset from the middle near the far edge of the memory array opposite the bank controller. The location of the column decoder enables a reduced array access time to obtain data from the target memory cell.

Abstract: An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a row decoder configured to configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections. The row decoder may be further configured to stop an access operation associated with the prime row from proceeding based on a comparison of subset of match signals from either the first or second pluralities of row sections.

Abstract: An example apparatus may perform concurrent threshold voltage compensation in a memory array with distributed row redundancy. The example apparatus may include a memory cell array having a mat having a plurality of row sections that each include respective prime memory cell rows and a respective redundant memory cell row. The example apparatus may further include a row decoder configured to receive an access command and a prime row address. The row decoder may be configured to, in response to a determination that the prime row address matches a defective prime row address, concurrently initiate a threshold voltage compensation operation on both of a prime row of the respective plurality of prime rows of memory cells of a first row section of the plurality of row sections corresponding to the prime row address and the respective redundant row of a second row section of the plurality of row sections.

Abstract: An onboard power supply device includes capacitors, a holder holding the capacitors, a mounting board having the capacitors mounted thereon and having the holder fixed thereto, and a heat-generating component mounted on the mounting board. Each of the capacitors includes a capacitor body and a lead terminal extending from the capacitor body. The holder includes a base part, first holding parts bundled by the base part and holding the capacitors, second holding parts each connected to a corresponding one of the first holding parts, and a fixing part extending from an outer edge of the base part toward the mounting board and fixed to the mounting board. The capacitor body of each of the capacitors is held by a corresponding one of the first holding parts. The lead terminal of each of the capacitors is held by a corresponding one of the second holding parts. The mounting board has a through-hole therein through which the lead terminal passes. The through-hole is connected to the lead terminal.

Abstract: Methods, systems, and devices for command triggered power gating for a memory device are described. Row logic circuitry for a memory array may be powered up (on) or powered down (off) independent of at least some other components of a memory device. For example, the row logic circuitry may be on when a bank of the memory array is an active state but may be off when the bank is in a stand-by or power-down state. Additionally or alternatively, error correction circuitry for a memory array may be powered up (on) or powered down (off) independent of at least some other components of a memory device. For example, the error correction circuitry may be on during an access portion of an access sequence but may otherwise be off.

Abstract: A memory mat architecture is presented where a column decoder is disposed within the memory array. The location of the column decoder reduces a distance between the column decoder and a target memory cell and thus reduces a distance that a column select signal travels from the column decoder to the target memory cell. A single predecoder is disposed in a bank controller for the memory array. The column decoder may be disposed in the middle of the memory array or offset from the middle near the far edge of the memory array opposite the bank controller. The location of the column decoder enables a reduced array access time to obtain data from the target memory cell.

Abstract: Provided is a magnetic clamp device that is capable of more finely measuring an induced voltage generated in a coil and selecting countermeasures against reductions in magnetization force. Multiple magnet blocks 11, 21 each comprising an invertible magnet 18, the polarity of which can be inverted, and non-invertible magnet 15, are positioned on a surface of a plate PL composed of magnetic body magnetically clamping a mold M1, M2 when in a magnetized state. The magnetic flux traversing the invertible magnet 18; and a control device 33 that determines whether or not there has been a polarity inversion in the induced voltage detected from the coil 31, and if there has been a polarity inversion, warns that the adhesion of the molds M1, M2 has decreased.