Patents by Inventor Hiroshi Funakubo
Hiroshi Funakubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230029023Abstract: It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same. There are provided a ferroelectric thin film represented by a chemical formula M11-XM2XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.Type: ApplicationFiled: December 20, 2020Publication date: January 26, 2023Inventors: Masato UEHARA, Marito AKIYAMA, Hiroshi YAMADA, Hiroshi FUNAKUBO, Takao SHIMIZU, Shinnosuke YASUOKA
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Publication number: 20230012093Abstract: The invention provides a non-volatile storage element and non-volatile storage device employing a ferroelectric material with low power consumption, excellent high reliability, and especially write/erase endurance, which can be mixed with advanced CMOS logic. The non-volatile storage element has at least a first conductive layer, a second conductive layer, and a ferroelectric layer composed of a metal oxide between both conductive layers, with a buffer layer having oxygen ion conductivity situated between the ferroelectric layer and the first conductive layer and/or second conductive layer.Type: ApplicationFiled: December 4, 2020Publication date: January 12, 2023Applicant: Tokyo Institute of TechnologyInventors: Kuniyuki KAKUSHIMA, Hiroshi FUNAKUBO, Shun-ichiro OHMI, Joel MOLINA REYES, Ichiro FUJIWARA, Atsushi HORI, Takao SHIMIZU, Yoshiko NAKAMURA, Takanori MIMURA
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Publication number: 20220178012Abstract: Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C.Type: ApplicationFiled: April 27, 2020Publication date: June 9, 2022Applicant: Tokyo Institute of TechnologyInventors: Hiroshi FUNAKUBO, Takao SHIMIZU, Takanori MIMURA, Yoshiko NAKAMURA, Reijiro SHIMURA, Yu-ki TASHIRO
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Publication number: 20220059753Abstract: Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction do of a surface of the dielectric thin film 3.Type: ApplicationFiled: September 11, 2019Publication date: February 24, 2022Applicants: TDK Corporation, TOKYO INSTITUTE OF TECHNOLOGYInventors: Yusuke SATO, Mirai ISHIDA, Wakiko SATO, Hiroshi FUNAKUBO, Takao SHIMIZU, Miyu HASEGAWA, Keisuke ISHIHAMA
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Patent number: 9842992Abstract: A transistor includes: a piezoresistor through which carriers conduct; a source that injects the carriers into the piezoresistor; a drain that receives the carriers from the piezoresistor; a piezoelectric material that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate that applies a voltage to the piezoelectric material so that the piezoelectric material applies a pressure to the piezoresistor.Type: GrantFiled: March 6, 2015Date of Patent: December 12, 2017Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Satoshi Sugahara, Yusuke Shuto, Minoru Kurosawa, Hiroshi Funakubo, Shuichiro Yamamoto
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Patent number: 9543501Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.Type: GrantFiled: August 5, 2013Date of Patent: January 10, 2017Assignees: Canon Kabushiki Kaisha, Kyoto University, Tokyo Institute of Technology, Sophia University, University of Yamanashi, National Institute of Advanced Industrial Science and Technology, Tokyo University of Science Educational Foundation Administrative OrganizationInventors: Makoto Kubota, Kaoru Miura, Toshihiro Ifuku, Jumpei Hayashi, Masaki Azuma, Olga Alexandrovna Smirnova, Hiroshi Funakubo, Hiroshi Uchida, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
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Publication number: 20170005265Abstract: A transistor includes: a piezoresistor through which carriers conduct; a source that injects the carriers into the piezoresistor; a drain that receives the carriers from the piezoresistor; a piezoelectric material that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate that applies a voltage to the piezoelectric material so that the piezoelectric material applies a pressure to the piezoresistor.Type: ApplicationFiled: March 6, 2015Publication date: January 5, 2017Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Satoshi Sugahara, Yusuke Shuto, Minoru Kurosawa, Hiroshi Funakubo, Shuichiro Yamamoto
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Patent number: 9082975Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.Type: GrantFiled: February 28, 2011Date of Patent: July 14, 2015Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Sophia School CorporationInventors: Makoto Kubota, Kaoru Miura, Hisato Yabuta, Takayuki Watanabe, Jumpei Hayashi, Hiroshi Funakubo, Tomoaki Yamada, Shintaro Yasui, Keisuke Yazawa, Hiroshi Uchida, Jun-ichi Nagata
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Patent number: 9022531Abstract: The piezoelectric element includes, on a substrate: a piezoelectric film; and a pair of electrodes provided in contact with the piezoelectric film; in which the piezoelectric film contains a perovskite-type metal oxide represented by the general formula (1) as a main component: Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General Formula (1) wherein the perovskite-type metal oxide is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction, of the pair of electrodes, a lower electrode provided on the substrate side is a multilayer electrode including at least a first electrode layer in contact with the substrate and a second electrode layer in contact with the piezoelectric film, and the second electrode layer is a perovskite-type metal oxide electrode which is uniaxially (111)-oriented in pseudo-cubic notation in a thickness direction.Type: GrantFiled: February 19, 2013Date of Patent: May 5, 2015Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Sophia School CorporationInventors: Makoto Kubota, Kaoru Miura, Hisato Yabuta, Takayuki Watanabe, Jumpei Hayashi, Hiroshi Funakubo, Shintaro Yasui, Takahiro Oikawa, Jun-ichi Nagata, Hiroshi Uchida
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Patent number: 8980117Abstract: Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): A(ZnxTi(1-x))yM(1-y)O3??(1) where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4?x?0.6; and y represents a numerical value of 0.17?y?0.60.Type: GrantFiled: January 1, 2010Date of Patent: March 17, 2015Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Sophia University, National Institute of Advanced Industrial Science and TechnologyInventors: Makoto Kubota, Toshihiro Ifuku, Hiroshi Funakubo, Keisuke Yazawa, Hiroshi Uchida, Takashi Iijima, Bong-yeon Lee
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Patent number: 8872413Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1-w-x,Aw,Bx)(Nb1-y-z,Cy,Dz)O3??(P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.Type: GrantFiled: April 24, 2013Date of Patent: October 28, 2014Assignees: FUJIFILM Corporation, Tokyo Institute of TechnologyInventors: Yukio Sakashita, Hiroshi Funakubo, Minoru Kurosawa, Mutsuo Ishikawa, Hiro Einishi, Takahisa Shiraishi
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Publication number: 20130330541Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.Type: ApplicationFiled: August 5, 2013Publication date: December 12, 2013Applicants: CANON KABUSHIKI KAISHA, KYOTO UNIVERSITY, TOKYO INSTITUTE OF TECHNOLOGY, TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION, UNIVERSITY OF YAMANASHI, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCES AND TECHNOLOGY, SOPHIA UNIVERSITYInventors: Makoto Kubota, Kaoru Miura, Toshihiro Ifuku, Jumpei Hayashi, Masaki Azuma, Olga Alexandrovna Smirnova, Hiroshi Funakubo, Hiroshi Uchida, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
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Publication number: 20130234564Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1?w?x, Aw, Bx)(Nb1?y?z, Cy, Dz)O3 - - - (P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.Type: ApplicationFiled: April 24, 2013Publication date: September 12, 2013Inventors: Yukio SAKASHITA, Hiroshi FUNAKUBO, Minoru KUROSAWA, Mutsuo ISHIKAWA, Hiro EINISHI, Takahisa SHIRAISHI
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Patent number: 8529785Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A(ZnxTi(1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.Type: GrantFiled: July 24, 2009Date of Patent: September 10, 2013Assignees: Canon Kabushiki Kaisha, Kyoto University, Tokyo Institute of Technology, Sophia University, University of Yamanashi, National Institute of Advanced Industrial Science and Technology, Tokyo University of Science Educational Foundation Administrative OrganizationInventors: Makoto Kubota, Kaoru Miura, Toshihiro Ifuku, Jumpei Hayashi, Masaki Azuma, Olga Alexandrovna Smirnova, Hiroshi Funakubo, Hiroshi Uchida, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
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Patent number: 8518290Abstract: Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by AxB10O30 and A?x?B?10O30 are combined to form a morphotropic phase boundary has good piezoelectric property. The AxB10O30 is b(Ba5?5?Bi10?/3Nb10O30)+(1?b)(Ba4Ag2Nb10O30) (0?b?1 and 0<??0.4), and the A?x?B?10O30 is c(Sr5Nb10O30)+d(Ca5Nb10O30)+e(Ba5Nb10O30) (0?c?0.8, 0?d?0.4, 0.1?e?0.9, and c+d+e=1).Type: GrantFiled: July 24, 2009Date of Patent: August 27, 2013Assignees: Canon Kabushiki Kaisha, University of Yamanashi, Tokyo Institute of Technology, National Institute of Advanced Industrial Science and TechnologyInventors: Takayuki Watanabe, Takanori Matsuda, Hiroshi Saito, Hiroshi Funakubo, Nobuhiro Kumada, Takashi Iijima, Bong-Yeon Lee
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Patent number: 8480918Abstract: The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}?(1?X){A(2)B(2)O3}??(1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0<X<1.Type: GrantFiled: June 9, 2008Date of Patent: July 9, 2013Assignee: Canon Kabushiki KaishaInventors: Kaoru Miura, Toshihiro Ifuku, Kenichi Takeda, Tetsuro Fukui, Hiroshi Funakubo
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Publication number: 20130127298Abstract: Provided is a Bi-based piezoelectric material having good piezoelectric properties. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Ax(ZnjTi(1-j))l(MgkTi(1-k))mMnO3??General formula (1) where: A represents a Bi element, or one or more kinds of elements selected from the group consisting of trivalent metal elements and containing at least a Bi element; M represents at least one kind of an element selected from the group consisting of Fe, Al, Sc, Mn, Y, Ga, and Yb; and 0.9?x?1.25, 0.4?j?0.6, 0.4?k?0.6, 0.09?l?0.49, 0.19?m?0.64, 0.13?n?0.48, and l+m+n=1 are satisfied.Type: ApplicationFiled: February 28, 2011Publication date: May 23, 2013Applicants: CANON KABUSHIKI KAISHA, SOPHIA SCHOOL CORPORATION, TOKYO INSTITUTE OF TECHNOLOGYInventors: Makoto Kubota, Kaoru Miura, Hisato Yabuta, Takayuki Watanabe, Jumpei Hayashi, Hiroshi Funakubo, Tomoaki Yamada, Shintaro Yasui, Keisuke Yazawa, Hiroshi Uchida, Jun-ichi Nagata
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Patent number: 8198199Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1?y)B??(1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3?(1?x)BO2??(2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.Type: GrantFiled: March 5, 2008Date of Patent: June 12, 2012Assignees: Canon Kabushiki Kaisha, Tokyo Institute of TechnologyInventors: Jumpei Hayashi, Takanori Matsuda, Tetsuro Fukui, Hiroshi Funakubo
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Patent number: 8142678Abstract: A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of <100>.Type: GrantFiled: August 7, 2006Date of Patent: March 27, 2012Assignee: Canon Kabushiki KaishaInventors: Takanori Matsuda, Katsumi Aoki, Toshihiro Ifuku, Kenichi Takeda, Tetsuro Fukui, Hiroshi Funakubo, Shintaro Yokoyama
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Patent number: 8114307Abstract: The present invention provides a piezoelectric element and having a piezoelectric body and a pair of electrodes being contact with the piezoelectric body, wherein the piezoelectric body consists of an ABO3 perovskite oxide in which an A-site atom consists of Bi and a B-site atom is composed of an atom of at least two types of elements.Type: GrantFiled: September 4, 2007Date of Patent: February 14, 2012Assignee: Canon Kabushiki KaishaInventors: Katsumi Aoki, Kenichi Takeda, Tetsuro Fukui, Hiroshi Funakubo, Shintaro Yasui, Ken Nishida