Abstract: The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

Abstract: A thin-film capacitor(2) in which a lower electrode(6), a dielectric thin-film(8), and an upper electrode(10) are formed in order on a substrate(4). The dielectric thin-film(8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate surface and which is expressed by a formula: (Bi2O2)2+(Am?1BmO3m+1)2?, or Bi2Am?1BmO3m+3 wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the temperature characteristics of the dielectric constant are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: BiFeO3 precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent elements of Bi, Fe and O and has crystal lattice of a tetragonal or orthorhombic system.

Abstract: A decoupling capacitor connected to a power source for reducing power source noise.

Abstract: A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.

Abstract: A lead zirconate titanate-based thin film is an epitaxial crystal thin film and has a chemical composition represented by the general formula Pb1-xLnxZryTi1-yO3 (wherein Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin; and 0?x<1, 0.43?y?0.65) and whose orientation is {111} (including orientations whose tilt angle from the direction perpendicular to the substrate surface is within 15°).

Abstract: Among a plurality of parameters concerning a film forming condition, different parameter values are set for one parameter and the same predetermined values are set for other parameters to manufacture two pieces of film structures including a high-dielectric constant film or ferroelectric film formed on a substrate. The film characteristics of the respective film structures are analyzed by a spectroscopic ellipsometer, a film structure in which the ratio of the presence of an accompanying dielectric film is smaller, is determined to be good by comparing the analysis results, and a parameter value set for the manufacture of the good film structure is determined. Then similar processing is performed, to specify an optimal parameter value for one parameter, and similar processing is also performed for other parameters to specify an optimal parameter value for the other parameters.

Abstract: The spectroscopic ellipsometer, by a computer program incorporated therein, applies voltage to a sample placed on a stage, with a power supply device and conducting probe stands, polarizes multi-wavelength light, with a light polarizer, generated by a xenon lamp and irradiates the polarized light to the sample. The sample is provided with a multilayer film and electrodes formed on a substrate and the sample's surface, and light reflected from the sample is received by the light receiver and measured by the spectrometer. The computer analyzes the optical characteristic of the sample individually for each layer of the multilayer film on the basis of the measurement result and a value calculated from a model which is formed according to the sample structure.

Abstract: A dielectric member including, on a substrate, a lower electrode, an oriented dielectric layer, and an upper electrode, in which at least either of the electrodes has an at least two-layered structure constituted of perovskite type oxide conductive layers, and has an orientation.

Abstract: To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate. A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.

Abstract: A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)2+(Am−1BmO3m+1)2−, or Bi2Am−1BmO3m+3 wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: A thin-film capacitor(2) in which a lower electrode(6), a dielectric thin-film(8), and an upper electrode(10) are formed in order on a substrate(4). The dielectric thin-film(8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate surface and which is expressed by a formula: (Bi2O2)2+(Am−1BmO3m+1)2−, or Bi2Am−1BmO3m+3 wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the temperature characteristics of the dielectric constant are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: A substrate of which the crystal planes are orientated perpendicular to a main surface thereof and made of the same kind of ion is prepared. Then, film forming operation is performed on the main surface of the substrate to epitaxially grow a Fe—Si based thin film thereon.

Abstract: A lead zirconate titanate-based thin film is an epitaxial crystal thin film and has a chemical composition represented by the general formula Pb1-xLnxZryTi1-yO3 (wherein Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin; and 0≦x<1, 0.43≦y≦0.65) and whose orientation is {111} (including orientations whose tilt angle from the direction perpendicular to the substrate surface is within 15°).

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;,&bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;,&bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: This invention provides a thin film deposition process making it possible to form a thin film having a desired composition with good reproducibility and high efficiency; a thin film deposition device therefor; a FTIR gas analyzer used in the thin film deposition process; and a mixed gas supplying device used in the thin film deposition process. The thin film deposition process comprises the steps of mixing a plurality of organic metal gases in a gas mixing chamber and supplying the mixed gas into a reaction chamber to deposit a thin film on a substrate positioned in the reaction chamber, wherein the mixture ratio between/among the organic metal gases supplied into the gas mixing chamber is measured with a FTIR gas analyzer fitted to either the gas mixing chamber or the reaction chamber and then on the basis of results of the measurement, the flow rates of the organic metal gases are individually adjusted.