Abstract: Provided is a piezoelectric material having a high Curie temperature and satisfactory piezoelectric characteristics, the piezoelectric material being represented by the following general formula (1): A(ZnxTi(1-x))yM(1-y)O3??(1) where A represents a Bi element, M represents at least one element selected from Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value of 0.4?x?0.6; and y represents a numerical value of 0.17?y?0.60.

Abstract: Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA?BO3-zA?B?O3 in which A is a Bi element; A? is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A? is at least one element selected from Ba, Sr and Ca; B? is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.

Abstract: A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

Abstract: An oxynitride piezoelectric material, which exhibits ferroelectricity and has good piezoelectric properties, and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1?xBix+?1B1?yB?y+?2O3?zNz??(1), where A represents a divalent element, B and B? each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and ?1 and ?2 each represent a numerical value of ?0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B? each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

Abstract: Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of ?10° or more to +10° or less with respect to the perpendicular direction.

Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

Abstract: Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1): xABO3-yA?BO3-zA?B?O3 in which A is a Bi element; A? is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A? is at least one element selected from Ba, Sr and Ca; B? is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.

Abstract: A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of the piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of ±10° with respect to the surface of the substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1-xBix+?1B1-yB?y+?2O3-zNz??(1) where A represents a divalent element, B and B? each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and ?1 and ?2 each represent a numerical value of ?0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B? each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

Abstract: There are disclosed an epitaxial film, comprising: heating an Si substrate provided with an SiO2 layer with a film thickness of 1.0 nm or more to 10 nm or less on a surface of the substrate; and forming on the SiO2 layer by use of a metal target represented by the following composition formula: yA(1?y)B??(1), in which A is one or more elements selected from the group consisting of rare earth elements including Y and Sc, B is Zr, and y is a numeric value of 0.03 or more to 0.20 or less, the epitaxial film represented by the following composition formula: xA2O3?(1?x)BO2??(2), in which A and B are respectively same elements as A and B of the composition formula (1), and x is a numeric value of 0.010 or more to 0.035 or less.

Abstract: Provided is a piezoelectric material which includes a compound free of lead and alkali metal and has a good piezoelectric property. The piezoelectric material where tungsten bronze structure oxides being free of lead and alkali metal and represented by AxB10O30 and A?x?B?10O30 are combined to form a morphotropic phase boundary has good piezoelectric property. The AxB10O30 is b(Ba5?5?Bi10?/3Nb10O30)+(1?b)(Ba4Ag2Nb10O30) (0?b?1 and 0<??0.4), and the A?x?B?10O30 is c(Sr5Nb10O30)+d(Ca5Nb10O30)+e(Ba5Nb10O30) (0?c?0.8, 0?d?0.4, 0.1?e?0.9, and c+d+e=1).

Abstract: Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1). A (ZnxTi1-x))yM(1-y)O3??(1) wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4?x?0.6; and y represents a numerical value satisfying 0.1?y?0.9.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta and W, or a combination of the atoms of the plurality of elements.

Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

Abstract: The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

Abstract: A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

Abstract: Among a plurality of parameters concerning a film forming condition, different parameter values are set for one parameter and the same predetermined values are set for other parameters to manufacture two pieces of film structures including a high-dielectric constant film or ferroelectric film formed on a substrate. The film characteristics of the respective film structures are analyzed by a spectroscopic ellipsometer, a film structure in which the ratio of the presence of an accompanying dielectric film is smaller, is determined to be good by comparing the analysis results, and a parameter value set for the manufacture of the good film structure is determined. Then similar processing is performed, to specify an optimal parameter value for one parameter, and similar processing is also performed for other parameters to specify an optimal parameter value for the other parameters.

Abstract: To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.