Patents by Inventor Hiroshi Goto

Hiroshi Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9406139
    Abstract: There is provided an image processing device including a depth acquisition unit configured to acquire depth information of an object included in a captured image, an image combining unit configured to combine the object with an image object having depth information according to each piece of the depth information, and an effect processing unit configured to execute effect processing according to the depth information of the object.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: August 2, 2016
    Assignee: Sony Corporation
    Inventors: Atsushi Shionozaki, Junichi Rekimoto, Hiroshi Goto
  • Publication number: 20160217350
    Abstract: To provide a technology capable of having another object related to one object easily recognized after detection of the one object, there is provided an information processing apparatus including a detection unit configured to detect a predetermined detection object, a data obtaining unit configured to obtain instruction information ordering that a predetermined imaging object according to the detection object fall within an imaging range of an imaging unit, and a display control unit configured to cause a display unit to display the instruction information.
    Type: Application
    Filed: August 26, 2014
    Publication date: July 28, 2016
    Applicant: SONY CORPORATION
    Inventors: Atsushi SHIONOZAKI, Hiroshi GOTO
  • Patent number: 9343586
    Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: May 17, 2016
    Assignee: Kobe Steel, Ltd.
    Inventors: Hiroshi Goto, Aya Miki, Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya
  • Publication number: 20160117028
    Abstract: This interconnection film for touch panel sensors is configured of a laminate structure that is composed of a first layer which is formed on a transparent conductive film and is comprising pure Cu or a Cu alloy that is mainly composed of Cu, and a second layer which is formed on the first layer and is formed of pure Al or an Al alloy that contains at least one element selected from a group consisting of Ta, Nd and Ti in an amount of 10 atomic % or smaller.
    Type: Application
    Filed: May 26, 2014
    Publication date: April 28, 2016
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
    Inventors: Yoko SHIDA, Hiroshi GOTO, MOTOTAKA OCHI
  • Patent number: 9324882
    Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: April 26, 2016
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Hiroshi Goto, Aya Miki, Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya, Byung Du Ahn, Gun Hee Kim, Yeon Hong Kim
  • Patent number: 9318507
    Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: April 19, 2016
    Assignee: Kobe Steel, Ltd.
    Inventors: Aya Miki, Shinya Morita, Hiroshi Goto, Hiroaki Tao, Toshihiro Kugimiya
  • Publication number: 20160104549
    Abstract: An Ag alloy film used for a reflecting electrode or an interconnection electrode, the Ag alloy film exhibiting low electrical resistivity and high reflectivity and having exceptional oxidation resistance under cleaning treatments such as an O2 plasma treatment or UV irradiation, wherein the Ag alloy film contains either In in an amount of larger than 2.0 atomic % to 2.7 atomic % or smaller; or Zn in an amount of larger than 2.0 atomic % to 3.5 atomic % or smaller; or both. The Ag alloy film may further contain Bi in an amount of 0.01 to 1.0 atomic %.
    Type: Application
    Filed: June 11, 2014
    Publication date: April 14, 2016
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
    Inventors: Yoko SHIDA, Hiroshi GOTO, Mototaka OCHI
  • Publication number: 20160099357
    Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.
    Type: Application
    Filed: May 26, 2015
    Publication date: April 7, 2016
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
    Inventors: Hiroshi GOTO, Aya MIKI, Tomoya KISHI, Kenta HIROSE, Shinya MORITA, Toshihiro KUGIMIYA
  • Publication number: 20160079437
    Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.
    Type: Application
    Filed: June 24, 2014
    Publication date: March 17, 2016
    Applicant: KABUSHIKI KAISHA KOBE SHO (KOBE STEEL, LTD.)
    Inventors: Mototaka OCHI, Shinya MORITA, Yasuyuki TAKANASHI, Hiroshi GOTO, Toshihiro KUGIMIYA
  • Patent number: 9252321
    Abstract: Technologies are generally described for manufacturing an optical device by attaching a light-emitting element to an optical element through a resin. In various examples, a method is described, where a substrate is provided to have a through-hole at a position in the substrate where an optical element is to be mounted. A resin in liquid state may be injected into the through-hole in the substrate. Further, an optical element having a light-emitting portion may be mounted on the substrate such that a center of the tight-emitting portion is self-aligned with a center of the through-hole due to a surface tension of the resin in liquid state. The resin may be cured such that the optical element is fixed to the substrate.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: February 2, 2016
    Assignee: Empire Technology Development LLC
    Inventor: Hiroshi Goto
  • Publication number: 20150343578
    Abstract: A guide rod, which has a diameter expandable tip end portion and restricts the oscillation of a connecting rod and a piston, is inserted into a cylinder bore via an opening adjacent to a crank chamber of the cylinder bore, and the piston is inserted into the cylinder bore via a cylinder head mounting side opening with the connecting rod positioned at a leading end. The diameter of the tip end portion of the guide rod is increased in a hole of a semi-circular arc-shaped end portion positioned at tip end of the connecting rod in the insertion direction, and thus the connecting rod is engaged with the guide rod. The guide rod moves and the connecting rod is pulled into the cylinder bore until the semi-circular arc-shaped end portion of the connecting rod sits on a crankpin of a crankshaft.
    Type: Application
    Filed: November 13, 2013
    Publication date: December 3, 2015
    Inventors: Hiroshi Goto, Yoichi Kamiyama, Satoshi Kanbayashi, Hisashi Takahashi
  • Patent number: 9182545
    Abstract: Technologies are generally described for fabricating a wafer level optical device using a plurality of substrates made of materials with a substantially compatible (e.g., same or similar) thermal expansion coefficient. An example device may include a first substrate including light-receiving or light-emitting elements, and a second substrate including optical elements located within through-holes of the second substrate. The through-holes can be configured to substantially align each of the light-receiving or light-emitting elements with a corresponding one of the optical elements. A thermal expansion coefficient of the second substrate can be configured to be substantially the same to a thermal expansion coefficient of the first substrate.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: November 10, 2015
    Assignee: Empire Technology Development LLC
    Inventor: Hiroshi Goto
  • Publication number: 20150318400
    Abstract: Provided is a back-channel etch (BCE) thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor layer of the TFT has excellent resistance to an acid etchant used when forming a source-drain electrode, and has excellent stress stability. The TFT comprises a gate electrode, a gate insulator film, an oxide semiconductor layer, a source-drain electrode, and a passivation film which protects the source-drain electrode, on a substrate. The oxide semiconductor layer comprises one or more elements selected from a group consisting tin, indium, gallium and zinc; and oxygen; and a value in a cross-section in the lamination direction of the TFT, as determined by [100×(the thickness of the oxide semiconductor layer directly below a source-drain electrode end?the thickness in the center portion of the semiconductor layer)/the thickness of the semiconductor layer directly below the source-drain electrode end], is not more than 5%.
    Type: Application
    Filed: December 26, 2013
    Publication date: November 5, 2015
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinya MORITA, Mototaka OCHI, Hiroshi GOTO, Toshihiro KUGIMIYA, Kenta HIROSE, Hiroaki TAO, Yasuyuki TAKANASHI
  • Patent number: 9175380
    Abstract: Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100?70. In equation (1), A represents the XRD peak intensity in the vicinity of 2?=34°, B represents the XRD peak intensity in the vicinity of 2?=31°, C represents the XRD peak intensity in the vicinity of 2?=35°, and D represents the XRD peak intensity in the vicinity of 2?=26.5°.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: November 3, 2015
    Assignee: KOBELCO RESEARCH INSTITUTE, INC.
    Inventors: Moriyoshi Kanamaru, Yuki Iwasaki, Minoru Matsui, Hiroshi Goto, Akira Nambu
  • Patent number: 9164121
    Abstract: Technologies are generally described for detecting acceleration by sensing a movement of a liquid contained in at least one liquid flow path arranged in a film-type material. An example device may be configured to detect acceleration based at least in part on an output signal from at least one strain sensor formed on at least one surface of a film layer. The film layer may include at least one liquid flow path containing a liquid and arranged in the film layer. The strain sensor may be formed on the at least one surface of the film layer in the vicinity of the least one liquid flow path, and may be configured to detect deformation on the at least one surface of the film layer.
    Type: Grant
    Filed: November 7, 2012
    Date of Patent: October 20, 2015
    Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
    Inventor: Hiroshi Goto
  • Publication number: 20150295058
    Abstract: Provided is a back-channel etch type thin-film transistor (TFT) without an etch stopper layer, wherein an oxide semiconductor of the TFT has excellent resistance to an acid etchant and stress stability. The oxide semiconductor layer is a laminate having a first layer comprising tin, indium, and gallium or zinc, and oxygen, and a second layer comprising one or more elements selected from a group consisting indium, zinc, tin and gallium; and oxygen. The TFT is formed, in the following order, a gate insulator film, the second semiconductor layer and the first semiconductor layer; and having a value in a cross section in the lamination direction of the TFT, as determined by [100×(the first layer thickness of directly below a source-drain electrode end?a center portion thickness of the first layer)/the first layer thickness of directly below the source-drain electrode end], of not more than 5%.
    Type: Application
    Filed: December 27, 2013
    Publication date: October 15, 2015
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
    Inventors: Shinya Morita, Mototaka Ochi, Hiroshi Goto, Toshihiro Kugimiya, Kenta Hirose
  • Publication number: 20150255627
    Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.
    Type: Application
    Filed: May 26, 2015
    Publication date: September 10, 2015
    Inventors: Hiroshi GOTO, Aya MIKI, Tomoya KISHI, Kenta HIROSE, Shinya MORITA, Toshihiro KUGIMIYA
  • Patent number: 9116260
    Abstract: Techniques described herein generally relate to optical devices and methods of manufacturing optical devices. An example optical device includes a first substrate having a first optical element, a second substrate coupled to the first substrate, and cured resin. The first substrate has a first optical element. The second substrate has at least one supporting structure and a second optical element supported by the at least one supporting structure. The at least one supporting structure has at least one receptor. The cured resin is arranged in the at least one receptor of the at least one supporting structure effective to position the second optical element relative to the first optical element.
    Type: Grant
    Filed: April 10, 2012
    Date of Patent: August 25, 2015
    Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
    Inventor: Hiroshi Goto
  • Patent number: 9109129
    Abstract: An inkjet ink of the present invention including: water; an organic solvent; a surfactant; and a colorant, wherein the organic solvent comprises the following (1), (2) and (3): (1) at least one polyhydric alcohol having an equilibrium moisture content of 30% by mass or higher at a temperature of 23° C. and humidity of 80% RH; (2) an amide compound expressed by the Structural Formula (I); (3) a compound expressed by the Structural Formula (II); a compound expressed by the Structural Formula (III), or a compound represented by the General Formula (I), or any combination thereof.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: August 18, 2015
    Assignee: Ricoh Company, Ltd.
    Inventors: Hiroshi Goto, Hidetoshi Fujii, Yuuki Yokohama
  • Publication number: 20150228674
    Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.
    Type: Application
    Filed: August 30, 2013
    Publication date: August 13, 2015
    Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.), Samsung Display Co., Ltd.
    Inventors: Aya Miki, Shinya Morita, Hiroshi Goto, Hiroaki Tao, Toshihiro Kugimiya, Byung Du Ahn, Gun Hee Kim, Jin Hyun Park, Yeon Hong Kim