Abstract: Provided are a hemoglobin-containing liposome having a specific membrane composition which secures high encapsulation efficiency of hemoglobin and exhibits excellent physical stability and in-vivo stability; and a method for producing the hemoglobin-containing liposome. A hemoglobin-containing liposome includes a hemoglobin solution as an internal fluid of a liposome, in which the membrane of the liposome is constituted of a lipid mixture of a phospholipid, cholesterol, and a saturated higher fatty acid, and a molar ratio of the cholesterol to the phospholipid (cholesterol/phospholipid) is 0.7 to 1.0, and the content of stearic acid in the lipid mixture is 25 to 30 mol %. Preferably, the membrane of the liposome further contains a polyethylene glycol-bound phospholipid in an amount of 0.8 mol % or more relative to the total amount of the lipids constituting the membrane, and the polyethylene glycol-bound phospholipid is bound onto the outer surface of the membrane.

Abstract: Technologies are generally described for fabricating a wafer level optical device using a plurality of substrates made of materials with a substantially compatible (e.g., same or similar) thermal expansion coefficient. An example device may include a first substrate including light-receiving or light-emitting elements, and a second substrate including optical elements located within through-holes of the second substrate. The through-holes can be configured to substantially align each of the light-receiving or light-emitting elements with a corresponding one of the optical elements. A thermal expansion coefficient of the second substrate can be configured to be substantially the same to a thermal expansion coefficient of the first substrate.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.

Abstract: A liquid composition, which contains: a water-soluble organic acid represented by the following general formula (1); a water-soluble amine represented by the following general formula (2); a water-soluble organic solvent; and water, wherein an amount of the water-soluble amine contained in the liquid composition is 0.9 or larger molar equivalent relative to acid groups contained in the water-soluble organic acid, where R1 is a hydroxyl group, a methyl group, or a hydrogen atom; and R2 is a hydroxyl group, or a methyl group, where R3 is a hydroxymethyl group; R4 is a methyl group, an ethyl group, or a hydroxymethyl group; and R5 is a hydrogen atom, a C1-4 alkyl group, or a hydroxymethyl group. The water-soluble organic acid and the water-soluble amine form a salt in the composition.

Abstract: Technologies are generally described for detecting acceleration by sensing a movement of a liquid contained in at least one liquid flow path arranged in a film-type material. An example device may be configured to detect acceleration based at least in part on an output signal from at least one strain sensor formed on at least one surface of a film layer. The film layer may include at least one liquid flow path containing a liquid and arranged in the film layer. The strain sensor may be formed on the at least one surface of the film layer in the vicinity of the least one liquid flow path, and may be configured to detect deformation on the at least one surface of the film layer.

Abstract: A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.

Abstract: A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.

Abstract: A heat-sensitive adhesive material contains a substrate and a heat-sensitive adhesive layer that contains a thermoplastic resin and a solid plasticizer, and the heat-sensitive adhesive material is so configured as to be heated and applied to an adherend, wherein the heat-sensitive adhesive material exhibits such an adhesive strength to the adherend as to increase with time from immediately after applying the heat-sensitive adhesive material to the adherend.

Abstract: A micropattern is joined to a substrate (W1) by: a first group of covering step and micropattern forming step by etching in a transfer step; and a second group of covering step and micropattern forming step by etching in the transfer step.

Abstract: A system for delivering an oxygen carrier, whereby a deoxygenated oxygen carrier can be oxygenated and efficiently delivered to an ischemic tissue, an oxygenation device for an oxygen carrier, and a housing for an oxygen carrier. A system for delivering an oxygen carrier, the system including: a housing in which a hemoglobin-based oxygen carrier is housed in a deoxygenated state; an oxygenation part for oxygenating the deoxygenated oxygen carrier; and a long element which can be inserted into a living organism and can release the oxygenated oxygen carrier through a lumen that is formed inside thereof.

Abstract: An inkjet ink, which contains water, an organic solvent, a surfactant, and a colorant, wherein the organic solvent contains at least one polyhydric alcohol having an equilibrium moisture content of 30% by mass or higher at a temperature of 23° C.

Abstract: Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient ? of the specific resistance is 0.02 or less.

Abstract: Provided are an oxide sintered body and a sputtering target which are suitable for use in producing an oxide semiconductor film for display devices and combine high electroconductivity with a high relative density and with which it is possible to form an oxide semiconductor film having a high carrier mobility. In particular, even when used in production by a direct-current sputtering method, the oxide sintered body and the sputtering target are less apt to generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible. This oxide sintered body is an oxide sintered body obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta, and sintering the mixture, the oxide sintered body having a Vickers hardness of 400 Hv or higher.

Abstract: To provide an inkjet treatment liquid, containing: a water-soluble coagulant; a water-soluble organic solvent; water; and an amide compound represented by the following general formula: where R is a C1-C6 alkyl group.

Abstract: Disclosed is a wiring structure that attains excellent low-contact resistance even if eliminating a barrier metal layer that normally is disposed between a Cu alloy wiring film and a semiconductor layer, and wiring structure with excellent adhesion. The wiring structure is provided with a semiconductor layer, and a Cu alloy layer, on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer, and the Cu alloy layer. The laminated structure is composed of a (N, C, F, O) layer which contains at least one element selected from among a group composed of nitrogen, carbon, fluorine, and oxygen, and a Cu—Si diffusion layer which includes Cu and Si, in this order from the substrate side. At least one element selected from among the group composed of nitrogen, carbon, fluorine, and oxygen that composes the (N, C, F, O) layer is bonded to Si in the semiconductor layer.

Abstract: An air bag jacket includes a first portion corresponding to a breast and an upper back portion of a user in a wearing state and a second portion corresponding to a belly and a waist of the user in a wearing state. A recessed portion is cut upwardly from a skirt is formed in the second portion at a position corresponding to either a right or left side of the user. An inflator is arranged on the inside of the recessed portion.

Abstract: Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.

Abstract: Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100?70. In equation (1), A represents the XRD peak intensity in the vicinity of 2?=34°, B represents the XRD peak intensity in the vicinity of 2?=31°, C represents the XRD peak intensity in the vicinity of 2?=35°, and D represents the XRD peak intensity in the vicinity of 2?=26.5°.

Abstract: The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 ?m or more and 3 ?m or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 ?m or more and 2 ?m or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from ¼t (t: thickness) to ¾t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.