Abstract: Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.

Abstract: A guide rod, which has a diameter expandable tip end portion and restricts the oscillation of a connecting rod and a piston, is inserted into a cylinder bore via an opening adjacent to a crank chamber of the cylinder bore, and the piston is inserted into the cylinder bore via a cylinder head mounting side opening with the connecting rod positioned at a leading end. The diameter of the tip end portion of the guide rod is increased in a hole of a semi-circular arc-shaped end portion positioned at tip end of the connecting rod in the insertion direction, and thus the connecting rod is engaged with the guide rod. The guide rod moves and the connecting rod is pulled into the cylinder bore until the semi-circular arc-shaped end portion of the connecting rod sits on a crankpin of a crankshaft.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A balloon coating method is disclosed, which includes an application step in which, where a flexible dispensing tube for supplying a coating solution containing the water-insoluble drug and a solvent is formed at its end portion with an opening portion for discharging the coating solution therethrough and when the opening portion-formed end portion side of the dispensing tube is kept in contact with the outer surface of the balloon in such a manner as to be oriented in a direction opposite to a rotating direction of the balloon while the balloon is rotated about an axis of the balloon, the coating solution is discharged through the opening portion and applied to the outer surface of the balloon while the dispensing tube is moved relative to the balloon in an axial direction X of the balloon.

Abstract: To provide an inkjet ink containing: a water-dispersible colorant; a surfactant; a penetrating agent; a water-dispersible resin; a wetting agent containing at least polyhydric alcohol having an equilibrium moisture content of 30% by mass or higher at 23° C., 80% RH; a compound represented by the general formula (1); water; and at least one selected from the group consisting of a compound represented by the general formulae (2) to (4), wherein the water-dispersible colorant is at least one selected from the group consisting of a self-dispersible pigment, a pigment dispersed by a pigment dispersing agent, and resin particles each containing a pigment, wherein a total amount of the water-dispersible colorant and the water-dispersible resin is 8% by mass to 35% by mass, and wherein a mass ratio of the water-dispersible resin to the water-dispersible colorant is 2 to 8.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: This wiring film for a flat panel display comprises a laminate structure which is formed by laminating a first layer, which includes at least one type of high melting-point metal selected from the group consisting of Mo, Ti, Cr, W, and Ta, and a second layer, which comprises an Al alloy that includes at least 0.01 atom % but less than 0.2 atom % of at least one from among the rare earth elements, Ni, and Co. In this wiring film, even when subjected to a thermal history of high temperatures from 400-500° C., inclusive, increase in wiring resistance is suppressed, hillocks or the like do not occur, and heat resistance is excellent.

Abstract: Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.

Abstract: There is provided an image processing device including a depth acquisition unit configured to acquire depth information of an object included in a captured image, an image combining unit configured to combine the object with an image object having depth information according to each piece of the depth information, and an effect processing unit configured to execute effect processing according to the depth information of the object.

Abstract: A balloon coating method and apparatus are disclosed which can perform coating while freely controlling, for example, the thickness of a coating layer and/or the morphological form of a drug. The balloon coating method and the balloon coating apparatus are for forming a coating layer on a surface of a balloon. The balloon coating method includes a pulling step of pulling the balloon in the direction of an axis of the balloon to thereby straighten a bend of the balloon, and a coating step of rotating the balloon about the axis of the balloon, with the balloon maintained in the bend-straightened state, and coating an outer surface of the balloon with a coating liquid containing a drug.

Abstract: A balloon coating method and a balloon coating apparatus are disclosed by which the thickness and/or morphological form of a drug in a coating formed on a balloon can be appropriately set. The balloon coating method can include moving a coating section for applying a coating liquid containing a drug relative to the balloon in the direction of an axis, while rotating the balloon about the axis of the balloon, thereby to apply the coating liquid to an outer surface of the balloon; detecting the distance of a dried part where the coating liquid applied to the outer surface of the balloon has been dried from the coating section; and controlling moving velocity of the coating section relative to the balloon in such a manner that the distance of the dried part from the coating section is maintained at a preliminarily set designated distance.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: Technologies are generally described for fabricating a multilayer substrate for a flexible electronic device. In example methods, at least one flexible film layer may be attached to a support film layer. At least one pattern may be formed on the at least one flexible film layer. The support film layer may be detached from the at least one flexible film layer. The support film layer may include a material with greater rigidity and lower thermal expansion coefficient than the at least one flexible film layer. The at least one flexible film layer may be attached to the support film layer using an adhesive such as a UV-curing adhesive. Further, the support film layer may be detached from the at least one flexible film layer by irradiating the UV-curing adhesive with ultraviolet light. The at least one flexible film may be attached to the support film layer using a roll-to-roll process.

Abstract: An electrode for use in an input device is formed on a transparent substrate. The electrode has a laminated structure including a first layer, a second layer and a third layer on one surface of the transparent substrate, in this order from the farthest side from the surface. The first layer includes a transparent conductive film. The second layer includes one or more members of a nitride of Mo and a nitride of an Mo alloy. The third layer includes a metal film having a reflectance of 40% or higher and a transmittance of 10% or less.

Abstract: There is provided an image processing device including a depth acquisition unit configured to acquire depth information of an object included in a captured image, an image combining unit configured to combine the object with an image object having depth information according to each piece of the depth information, and an effect processing unit configured to execute effect processing according to the depth information of the object.

Abstract: To provide a technology capable of having another object related to one object easily recognized after detection of the one object, there is provided an information processing apparatus including a detection unit configured to detect a predetermined detection object, a data obtaining unit configured to obtain instruction information ordering that a predetermined imaging object according to the detection object fall within an imaging range of an imaging unit, and a display control unit configured to cause a display unit to display the instruction information.

Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.

Abstract: This interconnection film for touch panel sensors is configured of a laminate structure that is composed of a first layer which is formed on a transparent conductive film and is comprising pure Cu or a Cu alloy that is mainly composed of Cu, and a second layer which is formed on the first layer and is formed of pure Al or an Al alloy that contains at least one element selected from a group consisting of Ta, Nd and Ti in an amount of 10 atomic % or smaller.

Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

Abstract: Provided is a thin film transistor comprising an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with: a gate electrode; two or more oxide semiconductor layers that are used as a channel layer; an etch stopper layer for protecting the surfaces of the oxide semiconductor layers; a source-drain electrode; and a gate insulator film interposed between the gate electrode and the channel layer. The metal elements constituting an oxide semiconductor layer that is in direct contact with the gate insulator film are In, Zn and Sn. The hydrogen concentration in the gate insulator film, which is in direct contact with the oxide semiconductor layer, is controlled to 4 atomic % or less.