Abstract: A balloon catheter that includes an elongated main body, a balloon connected to the elongated main body, and a base layer on the outer surface of the balloon. The base layer includes a water-soluble low-molecular weight compound. The balloon catheter also includes a plurality of elongate bodies extending radially away from the outer surface of the balloon. The elongate bodies are crystals of a water-insoluble drug. The elongate bodies each possesses an independent longitudinal axis. At least part of at least some of the elongate bodies are located in the interior of the base layer on the outer surface of the balloon.

Abstract: A balloon catheter includes an elongated main body extending in an axial direction and a balloon connected to the elongated main body. The balloon is inflatable and deflatable in the radial direction. The outer surface of the balloon includes a plurality of recesses that are spaced apart from one another. The balloon catheter also includes a plurality of elongate bodies on the outer surface of the balloon. The elongate bodies are crystals of a water-insoluble drug extending in the radial direction of the balloon away from the interior of the balloon. The elongate bodies each possess an independent long axis. At least two elongate bodies of the elongate bodies are positioned in one of the recesses in the outer surface of the balloon. These two elongate bodies extend from within the recess to a surrounding environment in the radial direction of the balloon.

Abstract: A fastener stringer includes a row of elements on which cured coating film is formed at sites where it is difficult to be coated by a roll coating method, preferably over the entire exposed surface, without incorporating any conductive wire in a fastener tape. A fastener stringer includes a row of elements and a fastener tape, at least one side edge of the fastener tape having insulation properties, the row of the elements being attached to the one side edge of the fastener tape, wherein each element includes a pair of leg portions and a head portion, the head portion having an engaging region for engaging with an opposing element when constructing a fastener chain, and wherein cured coating film is formed at least at a center portion in a front and back direction of the fastener tape on an end surface of the head portions.

Abstract: A safety cabinet has a second operation chamber in a first operation chamber and into which clean air is supplied, a second suction opening for sucking in air in the second operation chamber and a portion of the air in the first operation chamber, and a second operation opening part that is provided facing a first operation opening part and communicates the second operation chamber with the first operation chamber. Airflow containment (air barrier) is doubled with respect to the outside of a safety cabinet. In cases where decontamination and disinfection operations are carried out according to the changeover procedures, intensive decontamination and disinfection of the second operation chamber is sufficient, and decontamination and disinfection of the first operation chamber is hardly required. Decontamination and disinfection operations in the changeover procedures and the like can be carried out in a greatly reduced time.

Abstract: This thin film transistor has a gate electrode, a gate insulating film, an oxide semiconductor thin film, an etch stop layer for protecting the oxide semiconductor thin film, a source and drain electrodes, and a passivation film in this order on a substrate. The oxide semiconductor thin film is formed of an oxide configured from In, Ga and Sn as metal elements, and O, and has an amorphous structure, and the etch stop layer and/or the passivation film includes SiNx. The thin film transistor has an extremely high mobility of approximately 40 cm2/Vs or more.

Abstract: This thin film transistor comprises, on a substrate, at least a gate electrode, a gate insulating film, an oxide semiconductor layer, a source-drain electrode, and two or more protective films. The oxide semiconductor layer comprises Sn, O and one or more elements selected from the group consisting of In, Ga and Zn. In addition, the two or more protective films are composed of at least a first protective film that is in contact with the oxide semiconductor film, and one or more second protective films other than the first protective film. The first protective film is a SiOx film having a hydrogen concentration of 3.5 atomic % or lower.

Abstract: Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.

Abstract: A guide rod, which has a diameter expandable tip end portion and restricts the oscillation of a connecting rod and a piston, is inserted into a cylinder bore via an opening adjacent to a crank chamber of the cylinder bore, and the piston is inserted into the cylinder bore via a cylinder head mounting side opening with the connecting rod positioned at a leading end. The diameter of the tip end portion of the guide rod is increased in a hole of a semi-circular arc-shaped end portion positioned at tip end of the connecting rod in the insertion direction, and thus the connecting rod is engaged with the guide rod. The guide rod moves and the connecting rod is pulled into the cylinder bore until the semi-circular arc-shaped end portion of the connecting rod sits on a crankpin of a crankshaft.

Abstract: The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Abstract: A balloon coating method is disclosed, which includes an application step in which, where a flexible dispensing tube for supplying a coating solution containing the water-insoluble drug and a solvent is formed at its end portion with an opening portion for discharging the coating solution therethrough and when the opening portion-formed end portion side of the dispensing tube is kept in contact with the outer surface of the balloon in such a manner as to be oriented in a direction opposite to a rotating direction of the balloon while the balloon is rotated about an axis of the balloon, the coating solution is discharged through the opening portion and applied to the outer surface of the balloon while the dispensing tube is moved relative to the balloon in an axial direction X of the balloon.

Abstract: To provide an inkjet ink containing: a water-dispersible colorant; a surfactant; a penetrating agent; a water-dispersible resin; a wetting agent containing at least polyhydric alcohol having an equilibrium moisture content of 30% by mass or higher at 23° C., 80% RH; a compound represented by the general formula (1); water; and at least one selected from the group consisting of a compound represented by the general formulae (2) to (4), wherein the water-dispersible colorant is at least one selected from the group consisting of a self-dispersible pigment, a pigment dispersed by a pigment dispersing agent, and resin particles each containing a pigment, wherein a total amount of the water-dispersible colorant and the water-dispersible resin is 8% by mass to 35% by mass, and wherein a mass ratio of the water-dispersible resin to the water-dispersible colorant is 2 to 8.

Abstract: This wiring film for a flat panel display comprises a laminate structure which is formed by laminating a first layer, which includes at least one type of high melting-point metal selected from the group consisting of Mo, Ti, Cr, W, and Ta, and a second layer, which comprises an Al alloy that includes at least 0.01 atom % but less than 0.2 atom % of at least one from among the rare earth elements, Ni, and Co. In this wiring film, even when subjected to a thermal history of high temperatures from 400-500° C., inclusive, increase in wiring resistance is suppressed, hillocks or the like do not occur, and heat resistance is excellent.

Abstract: Provided are: a novel electrode which is suitable for use in an input device as typified by a capacitive touch panel sensor, and which has low electrical resistivity and low reflectance; and a method for producing this electrode. This electrode has a multilayer structure comprising a first layer that is formed of an Al film or an Al alloy film and a second layer that is partially nitrided and is formed of an Al alloy containing Al and at least one element selected from the group consisting of Mn, Cu, Ti and Ta.

Abstract: Provided is a thin film transistor that has high mobility and excellent stress resistance and is good typically in adaptability to wet etching process. The thin film transistor includes a substrate, and, disposed on the substrate in the following sequence, a gate electrode, a gate insulator film, oxide semiconductor layers, source-drain electrodes, and a passivation film that protects the source-drain electrodes. The oxide semiconductor layers have a first oxide semiconductor layer including In, Ga, Zn, Sn, and O, and a second oxide semiconductor layer including In, Ga, Sn, and O. The second oxide semiconductor layer is disposed on the gate insulator film. The first oxide semiconductor layer is disposed between the second oxide semiconductor layer and the passivation film. The atomic ratios in contents of the individual metal elements to all the metal elements constituting the first and the second oxide semiconductor layers are controlled to predetermined ratios.

Abstract: There is provided an image processing device including a depth acquisition unit configured to acquire depth information of an object included in a captured image, an image combining unit configured to combine the object with an image object having depth information according to each piece of the depth information, and an effect processing unit configured to execute effect processing according to the depth information of the object.

Abstract: A balloon coating method and a balloon coating apparatus are disclosed by which the thickness and/or morphological form of a drug in a coating formed on a balloon can be appropriately set. The balloon coating method can include moving a coating section for applying a coating liquid containing a drug relative to the balloon in the direction of an axis, while rotating the balloon about the axis of the balloon, thereby to apply the coating liquid to an outer surface of the balloon; detecting the distance of a dried part where the coating liquid applied to the outer surface of the balloon has been dried from the coating section; and controlling moving velocity of the coating section relative to the balloon in such a manner that the distance of the dried part from the coating section is maintained at a preliminarily set designated distance.

Abstract: A balloon coating method and apparatus are disclosed which can perform coating while freely controlling, for example, the thickness of a coating layer and/or the morphological form of a drug. The balloon coating method and the balloon coating apparatus are for forming a coating layer on a surface of a balloon. The balloon coating method includes a pulling step of pulling the balloon in the direction of an axis of the balloon to thereby straighten a bend of the balloon, and a coating step of rotating the balloon about the axis of the balloon, with the balloon maintained in the bend-straightened state, and coating an outer surface of the balloon with a coating liquid containing a drug.

Abstract: Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Abstract: Technologies are generally described for fabricating a multilayer substrate for a flexible electronic device. In example methods, at least one flexible film layer may be attached to a support film layer. At least one pattern may be formed on the at least one flexible film layer. The support film layer may be detached from the at least one flexible film layer. The support film layer may include a material with greater rigidity and lower thermal expansion coefficient than the at least one flexible film layer. The at least one flexible film layer may be attached to the support film layer using an adhesive such as a UV-curing adhesive. Further, the support film layer may be detached from the at least one flexible film layer by irradiating the UV-curing adhesive with ultraviolet light. The at least one flexible film may be attached to the support film layer using a roll-to-roll process.

Abstract: An electrode for use in an input device is formed on a transparent substrate. The electrode has a laminated structure including a first layer, a second layer and a third layer on one surface of the transparent substrate, in this order from the farthest side from the surface. The first layer includes a transparent conductive film. The second layer includes one or more members of a nitride of Mo and a nitride of an Mo alloy. The third layer includes a metal film having a reflectance of 40% or higher and a transmittance of 10% or less.