Abstract: The invention relates to a method of manufacturing a superconducting device, which comprises the steps of forming on a principal surface of a substrate a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide superconductor thin film and a flat-top projection at its center portion, forming a c-axis oriented oxide superconductor thin film having an extremely thin thickness on the non-superconducting oxide layer so as to form a superconducting channel on the projecting portion of the non-superconducting oxide layer, forming an insulating layer on the c-axis oriented oxide superconductor thin film so as to form a gate insulating layer on the superconducting channel, and forming an a-axis oriented oxide superconductor thin film so as to form a superconducting source region and a superconducting drain region of which upper surfaces have the same level as that of the superconducting channel.

Abstract: A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, an extremely thin superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor.

Abstract: A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of c-axis oriented oxide superconductor thin films on the non-superconducting oxide layer separated from each other and gently inclining to each other, a third superconducting region formed of an extremely thin c-axis oriented oxide superconductor thin film between the first and the second superconducting regions, which is continuous to the first and the second superconducting regions.

Abstract: An organic electroluminescent device comprises an organic emitting layer and a hole transport layer laminated with each other and arranged between a cathode and an anode, in characterized in that the hole transport layer made of the triphenylbenzene derivative. This hole transport layer has the high heart-resistant property and high conductivity to improve the durability and thus this device emits light at a high luminance and a high efficiency upon application of a low voltage.

Abstract: A superconducting device includes a superconducting channel constituted in an oxide superconductor the film deposited on a deposition surface of a substrate. A source electrode and a drain electrode are formed on the oxide superconductor thin film at opposite ends of the superconducting channel, so that a superconducting current can flow through be superconducting channel between the superconductor source electrode and the superconductor drain electrode. A gate electrode is formed through a gate insulator layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The gate electrode is in the form of a thin film and stands upright with respect to the gate insulator layer.

Abstract: A dental porcelain material free of yellow coloring or opacification upon firing is produced. A powder mixture is prepared by adding 0.1 to 2.0 wt % of antimony trioxide and 0.01 to 5 wt % of nitric acid or its salt or salt, to a porcelain starting material. The powder mixture is heat-treated at a temperature not lower than the softening temperature of the powder mixture to produce a fused mass which is pulverized and water-washed. 0.01 to 5 wt % of nitric acid or its salt or salts may be added again during the pulverizing step.

Abstract: A method of manufacturing a superconducting device involves forming a thin film on the surface of a substrate, forming a superconducting gate electrode on a portion of the thin film, etching the portions of the thin film using the gate electrode as a mask thereby providing a superconducting channel under the gate, forming a step portion on the superconducting channel and under the gate, converting the oxide portion of the step portion into a gate insulation portion by heating the substrate in a vacuum, forming a second oxide superconducting film on the exposed surface of the channel so that superconducting source and drain electrodes are formed on each side of the gate such that the drain and source have a thickness greater than that of the channel and are electrically isolated from the gate electrode.

Abstract: A thin film of oxide superconductor consisting of more than two portions (10, 11, 12) each possessing a predetermined crystal orientation and deposited on a common surface of a substrate (2). At least one selected portion (10) of the thin film of oxide superconductor is deposited on a thin under-layer (4, 100) which facilitates crystal growth of the selected portion and which is deposited previously on the substrate. The selected portions (10) may consist of a-axis oriented thin film portions while non-selected portions (11, 12) may consists of c-axis oriented thin film portions. The thin under-layer can be a buffer layer (4) or a very thin film (100) of oxide superconductor.

Abstract: A superconducting device has a stacked structure including a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in this given order. The stacked structure has an end surface portion extending from the first insulating layer to the second insulating layer. A fourth superconducting layer is formed to cover the end surface of the stacked structure. A third insulating layer separates the stacked structure end surface and the fourth superconducting layer. The fourth superconducting layer is electrically connected to the first and third superconducting layers but is isolated from the second superconducting layer by the third insulating layer. The first through fourth superconducting layers are formed of an oxide superconductor thin film.

Abstract: A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, a superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor.

Abstract: For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode are formed on the first and second oxide superconducting regions. The superconducting device thus formed can function as a super-FET.

Abstract: A Josephson junction device comprises a single crystalline substrate including a principal surface having a first and a second regions of which at least lattice distance of exposed lattices are slightly different from each other and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second portions respectively positioned on the first and the second regions of the substrate, which are constituted of single crystals of the oxide superconductor, lattices of the one shifts at angle of 45.degree. to that of the other, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.

Abstract: For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

Abstract: A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other.

Abstract: A superconducting thin film formed on a substrate, comprising an a-axis orientated oxide superconductor layer, a c-axis orientated oxide superconductor layer and an oxide semiconductor layer inserted between the a-axis orientated oxide superconductor layer and the c-axis orientated oxide superconductor layer, in contact with them in which superconducting current can flow between the a-axis orientated oxide superconductor layer and the c-axis orientated oxide superconductor layer through the oxide semiconductor layer by a long-range proximity effect.

Abstract: A superconducting device has a superconducting channel formed of an oxide superconductor on the principal surface of a substrate. A source electrode and a drain electrode likewise formed of oxide superconductor, are electrically connected by the channel to provide for superconducting current flow. A superconducting gate electrode is isolated by a side insulating region which completely covers each of opposite side surfaces of the gate electrode. The relative thicknesses of both the source and drain electrodes are much greater than that of the channel thickness. The superconducting channel and the gate insulator are both formed by one oxide thin film, and in a preferred embodiment, the gate electrode likewise is provided by the same film which forms the gate insulator and channel.

Abstract: A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film on the non-superconducting oxide layer, a superconducting source region and a superconducting drain region formed of an a-axis oriented oxide superconductor thin film at the both sides of the superconducting channel separated from each other, which are electrically connected each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, and a gate electrode of a material which includes silicon through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the gate electrode is embedded between the supercondu

Abstract: A semiconductor device such as a semiconductor acceleration sensor of an electrostatic capacity type and a method of manufacturing the same are disclosed, wherein a silicon layer is bonded to first and second glass layers by means of an anodic bonding process in such a manner as to be positioned between the first and second glass layers. The first glass layer has an overhung portion protruded from an edge of the second glass layer. At least an interconnection is formed between the silicon layer and the first glass layer and has a bonding pad positioned on the inner surface of the overhung portion of the first glass layer. Before the anodic bonding process, an anodic-bonding-inhibition-layer such as aluminum layer is positioned between a second glass wafer forming the second glass layer and a silicon wafer forming the silicon layer, and faces to a predetermined portion of a first glass wafer forming the first glass layer.

Abstract: For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

Abstract: A superconducting device comprises a substrate having a principal surface and a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, which has a projection at its center portion. A superconducting source region and a superconducting drain region formed of an .alpha.-axis oriented oxide superconductor thin film are positioned at the both sides of the projection of the non-superconducting oxide layer separated from each other and an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film is positioned on the projection of the non-superconducting oxide layer. The superconducting channel electrically connects the superconducting source region to the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region.