Abstract: A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.

Abstract: A photodiode array includes a plurality of photodiodes arranged in a single semiconductor laminate including a first conductivity-type semiconductor layer and an absorption layer overlying the first conductivity-type semiconductor layer. The photodiode array also includes a functional portion among the photodiodes in a predetermined proportion. The functional portion acts as a monitor light receiving portion and/or a charge sweep portion. Each of the photodiodes and functional portion has a second conductivity-type region reaching the absorption layer from the surface of the semiconductor laminate and an electrode in ohmic contact with the second conductivity-type region.

Abstract: A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array 10 according to the present invention has an anti-crosstalk portion B dividing each adjacent pair of photodiodes S, the anti-crosstalk portion B and the photodiodes S individually have a p-type area 16 extending inward from the surface side of a semiconductor laminate, and the inner end of the p-type area of the anti-crosstalk portion, namely the front, is closer to the back surface of the semiconductor laminate than the front of the p-type area of each of the photodiodes.

Abstract: An imprint apparatus which includes an imprint head configured to hold a mold, and performs an imprint process including dispensing of a resin to a shot region on a substrate and pressing of the mold and the dispensed resin with each other, comprises a controller configured to control an order of the imprint process for a plurality of selected shot regions on the substrate, and a first dispenser and a second dispenser configured to dispense the resin, wherein the first dispenser is arranged on a side of a first direction with respect to the imprint head, and the second dispenser is arranged on a side of a second direction opposite to the first direction with respect to the imprint head.

Abstract: A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 ?m and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 ?m.

Abstract: A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member.

Abstract: The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.

Abstract: A semiconductor integrated circuit device 100A includes: an integrated circuit body 106A having a plurality of MOSFETs on a semiconductor substrate; a plurality of elements 102A to be measured placed on the same substrate as the plurality of MOSFETs; a monitor circuit 105A for selecting an element to be measured whose measured parameter value is in a predetermined rank among the plurality of elements 102A to be measured as an element 101A to be measured for monitoring; and an operation parameter adjustment circuit 107 for adjusting an operation parameter 108 supplied to the integrated circuit body 106A based on the measured parameter 104A of the element to be measured for monitoring.

Abstract: A semiconductor integrated circuit device 100A includes: an integrated circuit body 106A having a plurality of MOSFETs on a semiconductor substrate; a plurality of elements 102A to be measured placed on the same substrate as the plurality of MOSFETs; a monitor circuit 105A for selecting an element to be measured whose measured parameter value is in a predetermined rank among the plurality of elements 102A to be measured as an element 101A to be measured for monitoring; and an operation parameter adjustment circuit 107 for adjusting an operation parameter 108 supplied to the integrated circuit body 106A based on the measured parameter 104A of the element to be measured for monitoring.

Abstract: The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X1)n-L wherein X1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X1s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).

Abstract: An article conveying device 10 in which a floor surface 21 of each of a plurality of fixed floors 20 is arranged so as to form a descending slope towards a downstream side in a conveying direction with respect to each other, each of a plurality of moving floors 30 is adjacently arranged on a side in the conveying direction with respect to each fixed floor 20, and a raising/lowering operation of simultaneously positioning the respective floor surface 31 of each moving floor 30 at a high position and a low position with respect to the floor surface 21 of the adjacent fixed floor 20 is repeated to arrange the floor surface 31 of each moving floor 30 positioned at the high position so as to form a descending slope towards the downstream side in the conveying direction with respect to each other.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin having at least two of repeating units represented by general formula (1) below and exhibiting increased solubility in an alkali developer when acted on by an acid, and (B) a compound that generates an acid when exposed to actinic rays or radiation. In the formula, each of R, A, R0, Z, L and n represents the same as defined in the claims and in the specification.

Abstract: A photodiode that can obtain a clear signal or image in a case in which noise that is not limited to a dark current is high, a photodiode array, and an image pickup device are provided. The photodiode includes a sensor section that is provided on a first semiconductor having a band gap energy which allows input light to be received; a modulated light-emitting section that is positioned behind the sensor section with respect to the input light, and that emits modulated light to the sensor section; and a signal processor that is formed on a second semiconductor which transmits the modulated light, and that is positioned between the sensor section and the modulated light emitting section.

Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 ?m.

Abstract: A clamping jig for mounting semiconductor laser bars includes: multiple supporting bars for holding laser bars therebetween; a pair of supporting plates each of which has a mounting face for mounting the supporting bars in a row; a pressing member for pressing the supporting bars for holding the laser bar; pressing cover members for covering both ends of each supporting bar to prevent supporting bars from falling from the supporting plate; and a supporting frame for detachably supporting the supporting plates and pressing cover members. Each supporting bar is formed with a longitudinal length greater than the laser bar, within a predetermined length so as to be mounted within the supporting frame. Both of the pair of supporting plates may be mounted so as to face one another, or just one may be mounted with the pressing cover members being mounted on the supporting frame instead of the other supporting plate.

Abstract: A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided.

Abstract: A metal polishing slurry which is capable of simultaneously realizing a high polishing speed and reduced dishing in the polishing of a subject to be polished is provided. The metal polishing slurry includes a compound represented by the following general formula (1): wherein X represents a heterocyclic group containing at least one nitrogen atom, Y represents hydrogen atom, an aliphatic hydrocarbon group, an aryl group, or a —C(?O)Z? wherein Z? is as defined for Z, and Z represents hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, an optionally substituted heterocyclic group, —NZ1Z2, or —OZ3 wherein Z1, Z2, and Z3 independently represent hydrogen atom, an optionally substituted aliphatic hydrocarbon group, an optionally substituted aryl group, or an optionally substituted heterocyclic group, with the proviso that Y and Z may together form a ring; an oxidizing agent; and an organic acid.

Abstract: A forward light monitoring photodiode having a high reflection film with low dark current for detecting forward light emitted from a laser diode and power of the laser diode in spite of the change of temperatures or yearly degradation. The high reflection film is made by depositing an SiON layer upon an InP window layer or an InP substrate by a plasma CVD method. Al2O3/Si reciprocal layers or Al2O3/TiO2 reciprocal layers are produced upon the SiON layer. The high reflection film reflects 80%-90% of a 45 degree inclination incidence beam and allows 20%-10% of the incidence beam to pass the film and arrive at the InP window or substrate.

Abstract: A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode. Each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.

Abstract: The invention provides an organic electronic functional material which comprises a 1,3,5-tris(4-(N,N-diarylamino)phenyl)benzene represented by the general formula (I) wherein A and B are each preferably a phenyl group having an alkyl group of 1-6 carbons or a cycloalkyl group of 5 or 6 carbons at the 4-position.