Patents by Inventor Hiroshi Inada

Hiroshi Inada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7968963
    Abstract: A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array 10 according to the present invention has an anti-crosstalk portion B dividing each adjacent pair of photodiodes S, the anti-crosstalk portion B and the photodiodes S individually have a p-type area 16 extending inward from the surface side of a semiconductor laminate, and the inner end of the p-type area of the anti-crosstalk portion, namely the front, is closer to the back surface of the semiconductor laminate than the front of the p-type area of each of the photodiodes.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: June 28, 2011
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Hiroshi Inada
  • Publication number: 20110147707
    Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 ?m.
    Type: Application
    Filed: December 10, 2010
    Publication date: June 23, 2011
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hiroshi INADA, Yasuhiro IGUCHI, Youichi NAGAI, Hiroki MORI, Kouhei MIURA
  • Publication number: 20110140082
    Abstract: Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same. A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3 having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016 cm?3 or less.
    Type: Application
    Filed: July 24, 2009
    Publication date: June 16, 2011
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yasuhiro Iguchi, Kohei Miura, Hiroshi Inada, Youichi Nagai
  • Patent number: 7938814
    Abstract: A disposable diaper comprising a liquid permeable topsheet 2, a liquid impermeable backsheet 3, and a liquid retentive absorbent member 4 and having a substantially oblong shape, the absorbent member 4 in the crotch portion having a middle absorbent portion 42 which occupies the middle 3/7 of the width of the absorbent member 4 and side absorbent portions 43 which each occupy the outermost 1/7 of the width of the absorbent member 4, wherein each side absorbent portion 43 has a larger unit absorption capacity than the middle absorbent portion 42, hydrophobic sheets 3 and 21 are disposed on the lateral outer edge of each side absorbent portion 43 to cover from the upper to lower surfaces of the edge, and an elastic member 71 is disposed in the part having each side absorbent portion 43 in the longitudinal direction of the side absorbent portion 43.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: May 10, 2011
    Assignee: Kao Corporation
    Inventors: Takao Koyama, Hidekazu Ito, Hiroshi Inada, Takahiro Arimura
  • Publication number: 20110057354
    Abstract: In an imprinting method for transferring a pattern of a mold to a resin coated on a substrate by using an imprinting apparatus including a mold holding unit and a resin coating unit, the resin is coated in n shot areas arranged in a direction parallel to a direction in which the holding unit and the coating unit are arranged where n is an integer equal to or greater than 2, and the pattern is transferred to the shot areas on a one-by-one basis. A distance D between the coating unit and the mold and a width W of each shot area as seen in the direction parallel to the direction in which the holding unit and the coating unit are arranged are selected so as to satisfy a condition D>(3/2?1/n)W, and the coating and the transferring are performed repeatedly on the substrate.
    Type: Application
    Filed: September 3, 2010
    Publication date: March 10, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Akio Aoki, Hiroshi Inada
  • Publication number: 20110031577
    Abstract: A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.
    Type: Application
    Filed: October 18, 2010
    Publication date: February 10, 2011
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai
  • Publication number: 20100258707
    Abstract: A photodiode array includes a plurality of photodiodes arranged in a single semiconductor laminate including a first conductivity-type semiconductor layer and an absorption layer overlying the first conductivity-type semiconductor layer. The photodiode array also includes a functional portion among the photodiodes in a predetermined proportion. The functional portion acts as a monitor light receiving portion and/or a charge sweep portion. Each of the photodiodes and functional portion has a second conductivity-type region reaching the absorption layer from the surface of the semiconductor laminate and an electrode in ohmic contact with the second conductivity-type region.
    Type: Application
    Filed: April 8, 2009
    Publication date: October 14, 2010
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiroshi INADA
  • Publication number: 20100258894
    Abstract: A photodiode array with reduced optical crosstalk and an image pickup device using it are provided. The photodiode array 10 according to the present invention has an anti-crosstalk portion B dividing each adjacent pair of photodiodes S, the anti-crosstalk portion B and the photodiodes S individually have a p-type area 16 extending inward from the surface side of a semiconductor laminate, and the inner end of the p-type area of the anti-crosstalk portion, namely the front, is closer to the back surface of the semiconductor laminate than the front of the p-type area of each of the photodiodes.
    Type: Application
    Filed: April 8, 2009
    Publication date: October 14, 2010
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiroshi INADA
  • Publication number: 20100233377
    Abstract: An imprint apparatus which includes an imprint head configured to hold a mold, and performs an imprint process including dispensing of a resin to a shot region on a substrate and pressing of the mold and the dispensed resin with each other, comprises a controller configured to control an order of the imprint process for a plurality of selected shot regions on the substrate, and a first dispenser and a second dispenser configured to dispense the resin, wherein the first dispenser is arranged on a side of a first direction with respect to the imprint head, and the second dispenser is arranged on a side of a second direction opposite to the first direction with respect to the imprint head.
    Type: Application
    Filed: March 11, 2010
    Publication date: September 16, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Akio Aoki, Hiroshi Inada, Tohru Kohda, Hideki Ina, Hiroshi Sato
  • Publication number: 20100181484
    Abstract: A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 ?m and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 ?m.
    Type: Application
    Filed: January 19, 2010
    Publication date: July 22, 2010
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hiroshi INADA, Youichi NAGAI
  • Publication number: 20100171097
    Abstract: A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member.
    Type: Application
    Filed: January 4, 2010
    Publication date: July 8, 2010
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Youichi NAGAI, Hiroshi INADA
  • Patent number: 7745895
    Abstract: The present invention provides a semiconductor light emitting device capable of easily realizing stable output characteristics within a wide temperature range. The semiconductor light emitting device includes a semiconductor laser element, and a semiconductor photodiode having an absorption layer disposed on a semiconductor substrate, a second conductivity type region formed in a cap layer and the absorption layer, and a transmissive reflection film disposed on the back side of the semiconductor substrate. The semiconductor photodiode is mounted with the epitaxial layer side down, and the transmissive reflection film is irradiated with a laser beam emitted from the semiconductor laser element so that light reflected from the transmissive reflection film is used as output light, and transmitted light is received by the semiconductor photodiode and used for controlling the output of the semiconductor laser element.
    Type: Grant
    Filed: December 7, 2006
    Date of Patent: June 29, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Youichi Nagai, Yasuhiro Iguchi, Hiroshi Inada
  • Publication number: 20100156450
    Abstract: A semiconductor integrated circuit device 100A includes: an integrated circuit body 106A having a plurality of MOSFETs on a semiconductor substrate; a plurality of elements 102A to be measured placed on the same substrate as the plurality of MOSFETs; a monitor circuit 105A for selecting an element to be measured whose measured parameter value is in a predetermined rank among the plurality of elements 102A to be measured as an element 101A to be measured for monitoring; and an operation parameter adjustment circuit 107 for adjusting an operation parameter 108 supplied to the integrated circuit body 106A based on the measured parameter 104A of the element to be measured for monitoring.
    Type: Application
    Filed: February 23, 2010
    Publication date: June 24, 2010
    Applicant: Panasonic Corporation
    Inventors: Hiroshi INADA, Akio Hirata
  • Patent number: 7710191
    Abstract: A semiconductor integrated circuit device 100A includes: an integrated circuit body 106A having a plurality of MOSFETs on a semiconductor substrate; a plurality of elements 102A to be measured placed on the same substrate as the plurality of MOSFETs; a monitor circuit 105A for selecting an element to be measured whose measured parameter value is in a predetermined rank among the plurality of elements 102A to be measured as an element 101A to be measured for monitoring; and an operation parameter adjustment circuit 107 for adjusting an operation parameter 108 supplied to the integrated circuit body 106A based on the measured parameter 104A of the element to be measured for monitoring.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: May 4, 2010
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Inada, Akio Hirata
  • Publication number: 20100075500
    Abstract: The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X1)n-L wherein X1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X1s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).
    Type: Application
    Filed: March 17, 2009
    Publication date: March 25, 2010
    Applicant: FUJIFILM Corporation
    Inventors: Masaru Yoshikawa, Tadashi Inaba, Hiroshi Inada, Takamitsu Tomiga
  • Publication number: 20100032265
    Abstract: An article conveying device 10 in which a floor surface 21 of each of a plurality of fixed floors 20 is arranged so as to form a descending slope towards a downstream side in a conveying direction with respect to each other, each of a plurality of moving floors 30 is adjacently arranged on a side in the conveying direction with respect to each fixed floor 20, and a raising/lowering operation of simultaneously positioning the respective floor surface 31 of each moving floor 30 at a high position and a low position with respect to the floor surface 21 of the adjacent fixed floor 20 is repeated to arrange the floor surface 31 of each moving floor 30 positioned at the high position so as to form a descending slope towards the downstream side in the conveying direction with respect to each other.
    Type: Application
    Filed: December 13, 2007
    Publication date: February 11, 2010
    Applicant: KAO CORPORATION
    Inventors: Kouichi Hatano, Hiroshi Inada, Katsuo Takahashi, Hidenori Shirai
  • Publication number: 20090325103
    Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin having at least two of repeating units represented by general formula (1) below and exhibiting increased solubility in an alkali developer when acted on by an acid, and (B) a compound that generates an acid when exposed to actinic rays or radiation. In the formula, each of R, A, R0, Z, L and n represents the same as defined in the claims and in the specification.
    Type: Application
    Filed: June 29, 2009
    Publication date: December 31, 2009
    Applicant: FUJIFILM CORPORATION
    Inventors: Kenichiro SATO, Akinori Shibuya, Shuhei Yamaguchi, Hiroshi Inada
  • Publication number: 20090295960
    Abstract: A photodiode that can obtain a clear signal or image in a case in which noise that is not limited to a dark current is high, a photodiode array, and an image pickup device are provided. The photodiode includes a sensor section that is provided on a first semiconductor having a band gap energy which allows input light to be received; a modulated light-emitting section that is positioned behind the sensor section with respect to the input light, and that emits modulated light to the sensor section; and a signal processor that is formed on a second semiconductor which transmits the modulated light, and that is positioned between the sensor section and the modulated light emitting section.
    Type: Application
    Filed: May 28, 2009
    Publication date: December 3, 2009
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hiroshi INADA, Youichi NAGAI
  • Patent number: 7608825
    Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 ?m.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: October 27, 2009
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Youichi Nagai, Yasuhiro Iguchi, Hiroshi Inada
  • Patent number: 7595089
    Abstract: A clamping jig for mounting semiconductor laser bars includes: multiple supporting bars for holding laser bars therebetween; a pair of supporting plates each of which has a mounting face for mounting the supporting bars in a row; a pressing member for pressing the supporting bars for holding the laser bar; pressing cover members for covering both ends of each supporting bar to prevent supporting bars from falling from the supporting plate; and a supporting frame for detachably supporting the supporting plates and pressing cover members. Each supporting bar is formed with a longitudinal length greater than the laser bar, within a predetermined length so as to be mounted within the supporting frame. Both of the pair of supporting plates may be mounted so as to face one another, or just one may be mounted with the pressing cover members being mounted on the supporting frame instead of the other supporting plate.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: September 29, 2009
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuyuki Mitsui, Hiroshi Inada