Abstract: A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero, and then an actuator device of the actual vehicle and the model vehicle are operated based on the control inputs. The FB distribution law determines a control input for operating the model such that a state amount error is approximated to zero while restraining a predetermined restriction object amount from deviating from a permissible range. A vehicle control device capable of enhancing robustness against disturbance factors or their changes while performing operation control of actuators that is as suited to behaviors of an actual vehicle as possible is provided.

Abstract: A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a road surface reaction force and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied.

Abstract: A basic required manipulated variable Mfbdmd_a is determined on the basis of a state amount error, which is the difference between a state amount of a motion of an actual vehicle 1 and a reference state amount, then a driving/braking force manipulation control input Fxfbdmd_n of a wheel is determined on the basis of the above basic required manipulated variable. At this time, a change in a driving/braking force operation control input Fxdmd_n of a front wheel and a rear wheel, respectively, of a particular set is made to be proportional to a change in the basic required manipulated variable Mfbdmd_a, and the ratio (gain) of a change in Fxdmd_n with respect to a change in Mfbdmd_a is made to change on the basis of gain adjustment parameters, such as side slip angles ?f_act and ?r_act.

Abstract: An FB distribution rule 20 determines an actual vehicle actuator operation control input and a vehicle model operation control input such that a difference between a reference state amount determined by a vehicle model 16 and an actual state amount of an actual vehicle 1 (a state amount error) approximates to zero, and the control inputs are used to operate an actuator device 3 of the actual vehicle 1 and the vehicle model 16. In the FB distribution law 20, when an actual vehicle feedback required amount based on the state amount error exists in a dead zone, then an actual vehicle actuator operation control input is determined by using the required amount as a predetermined value. A vehicle model manipulated variable control input is determined such that a state amount error is brought close to zero, independently of whether an actual vehicle feedback required amount exists in a dead zone.

Abstract: A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.

Abstract: A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a state amount error which is a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero. An actuator device of the actual vehicle and the model vehicle, respectively, are then operated based on the control inputs. The FB distribution law estimates an external force acting on the actual vehicle due to a control input for operating an actual vehicle actuator, and determines a control input for operating the vehicle model on the basis of the estimated value and a basic value of a control input for operating the vehicle model for approximating the state amount error to zero.

Abstract: A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate.

Abstract: According to the embodiments, a semiconductor device using SiC and having a high breakdown voltage, a low on-resistance, and excellent reliability is provided.

Abstract: A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.

Abstract: According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate.

Abstract: A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second thermal oxidation treatment at an oxidation speed of at most 5 nm/hour in a second oxidizing atmosphere having a lower oxygen concentration than the first oxidizing atmosphere, to increase film thickness of the gate oxide film, after the first thermal oxidation treatment, and forming a gate electrode on the gate oxide film with the increased film thickness.

Abstract: An FB distribution rule 20 determines an actual vehicle actuator operation control input and a vehicle model operation control input such that a difference between a reference state amount determined by a vehicle model 16 and an actual state amount of an actual vehicle 1 (a state amount error) approximates to zero, and the control inputs are used to operate an actuator device 3 of the actual vehicle 1 and the vehicle model 16. In the FB distribution law 20, when an actual vehicle feedback required amount based on the state amount error exists in a dead zone, then an actual vehicle actuator operation control input is determined by using the required amount as a predetermined value. A vehicle model manipulated variable control input is determined such that a state amount error is brought close to zero, independently of whether an actual vehicle feedback required amount exists in a dead zone.

Abstract: A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law 20 on the basis of a difference between a reference state amount determined by a vehicle model 16 and an actual state amount of an actual vehicle 1 (state amount error) such that the state amount error is approximated to zero, and then an actuator device 3 of the actual vehicle 1 and the model vehicle 16, respectively, are operated on the basis of the control inputs. The FB distribution law 20 estimates an external force acting on the actual vehicle 1 due to a control input for operating an actual vehicle actuator, and determines a control input for operating the vehicle model on the basis of the estimated value and a basic value of a control input for operating the vehicle model for approximating the state amount error to zero.

Abstract: A basic required manipulated variable Mfbdmd_a is determined on the basis of a state amount error, which is the difference between a state amount of a motion of an actual vehicle 1 and a reference state amount, then a driving/braking force manipulation control input Fxfbdmd_n of a wheel is determined on the basis of the above basic required manipulated variable. At this time, a change in a driving/braking force operation control input Fxdmd_n of a front wheel and a rear wheel, respectively, of a particular set is made to be proportional to a change in the basic required manipulated variable Mfbdmd_a, and the ratio (gain) of a change in Fxdmd_n with respect to a change in Mfbdmd_a is made to change on the basis of gain adjustment parameters, such as side slip angles ?f_act and ?r_act.

Abstract: A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a road surface reaction force and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied.

Abstract: A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law based on a difference between a reference state amount determined by a vehicle model and an actual state amount of an actual vehicle such that the state amount error is approximated to zero, and then an actuator device of the actual vehicle and the model vehicle are operated based on the control inputs. The FB distribution law determines a control input for operating the model such that a state amount error is approximated to zero while restraining a predetermined restriction object amount from deviating from a permissible range. A vehicle control device capable of enhancing robustness against disturbance factors or their changes while performing operation control of actuators that is as suited to behaviors of an actual vehicle as possible is provided.

Abstract: A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate.

Abstract: An actual vehicle actuator operation control input and a model operation control input are determined by an FB distribution law such that the difference between a reference state amount determined in a vehicle model and an actual state amount of an actual vehicle approximates zero, and then an actuator device of the actual vehicle and the vehicle model are operated on the basis of the control inputs. The value of a parameter of the vehicle model is set according to an actual vehicle motional state such that the attenuation property of a reference state amount when a drive manipulated variable is changed is higher than the attenuation property of an actual state amount. Accordingly, the actual vehicle actuator device is properly controlled independently of an actual vehicle motional state such that a state amount related to an actual vehicle motion approximates a vehicle state amount on a dynamic characteristic model.

Abstract: A driving/braking force manipulation control input of a k-th wheel, which denotes one or more specific wheels among a plurality of wheels of a vehicle, is determined such that a required condition concerning a relationship among a road surface reaction force that may act from a road surface on the k-th wheel on the basis of the detected values or estimated values of a side slip angle and a friction characteristic of the k-th wheel, a feedback control input related to the driving/braking force of the k-th wheel for bringing a difference between a state amount of the vehicle and a reference state amount close to zero, a driving/braking force feedforward control input based on a drive manipulated variable supplied by a driver of the vehicle, and a k-th wheel driving/braking force manipulation control input is satisfied.

Abstract: A light emitting device comprises: a light emitting element; a plurality of lead frames to which the light emitting element is electrically connected; and a package that includes in its interior at least part of said lead frames which protrude outward at one end, that is equipped with an opening for taking off light from the light emitting element, and that extends in the lengthwise direction, wherein a concave portion is formed in the outer surface of at least part of the package wall, the lead frames protruding outward from the package are accommodated in this concave portion, and the walls that constitute said opening and are across from each other in the widthwise direction of the package comprise at least a first wall that is across from the light emitting element, a second wall that is raised up by a step from the first wall, and a third wall that links the first wall and the second wall, and the second wall and third wall are formed thicker than the first wall.