Abstract: Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

Abstract: The invention relates to an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. When the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.

Abstract: Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract: A novel fluorescent compound having a high light fastness, high fluorescence quantum yield and sharp absorption spectrum, which emits fluorescence having a wavelength in long wavelength region, as well as its use as a labeling agent, is disclosed. In Formula [I] below, by forming a specific hetero ring(s) with R1 and R2, and/or R6 and R7, shift of the wavelength of the fluorescence to longer wavelength and increase in molar extinction coefficient are attained maintaining the high light fastness, high fluorescence quantum yield and sharp absorption spectrum which the fluorescent dyes having the boron dipyrromethene skeleton have.

Abstract: Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

Abstract: Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

Abstract: It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.

Abstract: An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.

Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.

Abstract: A trajectory of motion of the mechanical element is designed by using a three-dimensional curve, referred to as a three-dimensional clothoid curve, in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable. A trajectory of a machine tool or a contour shape of a workpiece is expressed by using a three-dimensional curve, referred to as a three-dimensional clothoid curve, in which each of a pitch angle and a yaw angle in a tangential direction is given by a quadratic expression of a curve length or a curve length variable to control motion of the machine tool based on the three-dimensional curve.

Abstract: A plasma generator has a first member 2 containing a dielectric material, and an electrode group composed of a plurality of electrodes and including a first assembly 6 partially including a plurality of electrodes and a second assembly 7 partially including a plurality of electrodes. In accordance with an AC voltage, the first assembly 6 generates a plasma in a first space 23 contacting the first member 2. In accordance with a DC voltage, the second assembly 7 generates an electric field in a second space 24 contacting the first member 2 and communicating with the first space 23. At least one or more electrodes of a portion of the first assembly 6 and at least one or more electrodes of a portion of the second assembly 7 are provided on the surface of or in the inside of the first member 2.

Abstract: There is a need for inspecting a heightwise variation in a sample. A holder holds a sample. A charge control unit charges the sample held by the holder. A retarding power supply applies a voltage to the sample held by the holder. An electro-optic system radiates an electron beam to the sample applied with a voltage by the retarding power supply and images a mirror electron returning near the surface of the sample. An image processing unit processes a mirror image resulting from imaging the mirror electron. The image processing unit outputs information corresponding to a difference between mirror images, i.e., a mirror image acquired by imaging the mirror electron and a mirror image for a prepared standard preparation, as a heightwise variation in a sample.

Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.

Abstract: A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5.

Abstract: The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.

Abstract: One embodiment of the present invention discloses an additive for polishing composition, which can ensure stable polishing properties. The additive for polishing composition contains one or more amine compounds and an alcohol. The one or more amine compounds contain a quaternary ammonium salt. In one embodiment, when the one or more amine compounds are contained in high concentration, the occurrence of precipitation of the amine compound can be prevented by including the alcohol.

Abstract: An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.