Abstract: There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.

Abstract: The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.

Abstract: According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

Abstract: The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution.

Abstract: An exemplary information-processing system includes: a first measuring unit that measures body activity amount of a user; a second measuring unit that measures body activity amount of the user, the second measuring unit being different from the first measuring unit; a calculation unit that executes a predetermined calculation based on at least the body activity amount measured by the first measuring unit and the body activity amount measured by the second measuring unit; and an output unit that outputs information based on a result of the calculation executed by the calculation unit.

Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.

Abstract: A method of manufacturing a wheel support bearing assembly having a plastically deformed portion engageable with an inclined surface portion of an annular stepped area in the inner race segment. The method includes that the plastically deformed portion, which is of a cylindrical configuration before it is deformed, is formed by pressing a crimping punch, of which front end portion outer peripheral surface is a tapered shape, axially into an inner peripheral surface of the inboard end portion of the hub axle to allow the cylindrical plastically deformed portion to be crimped in the diameter expanded condition.

Abstract: An example information processing apparatus determines whether an orientation of a display unit capable of being held by a user is in a first state or in a second state. If it has been determined that the orientation of the display unit is in the first state, the information processing apparatus sets, in a predetermined area, a display range to be displayed in the display unit, in accordance with the orientation of the display unit. If it has been determined that the orientation of the display unit is in the second state, the information processing apparatus sets the display range, regardless of the orientation of the display unit.

Abstract: An outer joint member for a constant velocity universal joint is formed by a face spline forming apparatus and a face spline forming method. The face spline forming apparatus includes a punch member having a tooth portion for forming a face spline, a pedestal having an end-surface receiving surface for receiving an opening end surface of a cup section, and a shaft member having an inner-surface receiving surface for receiving a bottom-wall inner surface of the cup section. The opening end surface and the bottom-wall inner surface are brought into a simultaneous pressure receiving state. In this state, the punch member performs a rocking motion to form the face spline in a bottom-wall back surface due to plastic deformation caused by the tooth portion of the punch member.

Abstract: Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminum (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it. The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).

Abstract: The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.

Abstract: According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution.

Abstract: According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

Abstract: The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a microstructure formed of polysilicon which includes at least one compound selected from the group consisting of pyridinium halides containing an alkyl group having 12, 14 or 16 carbon atoms, and water; and a method for producing a microstructure using the processing liquid.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a microstructure formed of silicon oxide which includes at least one compound selected from the group consisting of a fluoroalkyl group-containing ammonium halide, a fluoroalkyl group-containing betaine compound and a fluoroalkyl group-containing amine oxide compound, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.

Abstract: Reference coordinates in a coordinate system and designated coordinates based on coordinate information outputted by a pointing device are provided, and a distance between the reference coordinates and the designated coordinates is calculated. When a first mode is selected, a calculated distance is converted into a predetermined parameter using a first conversion function. On the other hand, when a second mode is selected, a calculated distance is converted into a parameter using a second conversion function. According to whether the first mode is selected or the second mode is selected, a game is processed based on the aforementioned parameter.

Abstract: A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.