Abstract: [Problems] An object of the present invention is to provide a cleaning liquid composition which removes residual liquid and contaminants after chemical-mechanical polishing (CMP) of the surface of a semiconductor substrate in the production process of a semiconductor circuit device; and a cleaning method using the cleaning liquid composition. [Means for Solution] The cleaning liquid composition according to the present invention comprises a quaternary ammonium hydroxide, 1-ethinyl-1-cyclohexanol, a complexing agent, diethylenetriamine pentamethylene phosphonate and water and has a pH of 9 to 13. By cleaning a wiring material with the cleaning liquid composition according to the present invention, the wiring material can be protected against contamination, corrosion, oxidation and generation of foreign substance that are originated from the production process of a semiconductor circuit device or the environment, so that a clean wiring surface can be obtained.

Abstract: An object arranged in a virtual world is caused to move in accordance with data based on a load applied to a load detection device. Then, based on attitude data outputted from a portable display device and a position of the object in the virtual world, a first virtual camera for generating an image of the virtual world is controlled, and a first image representing the virtual world viewed from the first virtual camera is displayed on the portable display device.

Abstract: A load applied to a first input device is sequentially detected, and a first display image to be displayed on a portable display device is sequentially generated based on load data. The portable display device obtains image data representing the first display image, and sequentially displays the first display image represented by the obtained image data. In this exemplary embodiment, when a user performs an operation based on his/her action and thereby a process based on the user's action is performed, the user is allowed to view the result of the process in a favorable situation.

Abstract: It is determined, based on attitude data, whether or not a direction of a predetermined axis set in a portable display device is within a first range. When the result of the determination is that the direction of the predetermined axis is within the first range, an action of a first object arranged in a virtual world is controlled based on the direction of the predetermined axis. When it is determined that the direction of the predetermined axis is outside the first range, at least an action of a second object arranged in the virtual world is controlled based on the direction of the predetermined axis. Then, a first image showing the virtual world including at least the first object and the second object is displayed on the portable display device.

Abstract: A movement direction of an object arranged in a virtual world is set based on attitude data. Further, the object is moved in the movement direction in the virtual world in accordance with data based on a load applied to a load detection device. An image showing the virtual world including at least the object or an image showing the virtual world viewed from the object is displayed as a first image on a portable display device.

Abstract: In an information system, a web server records web access logs of a client outside of a LAN. A mail server records transmission/reception logs of e-mails. A DB server records access right operation logs. A task application server records DB access log. An administrative server collects logs recorded in the web server, the mail server, the DB server, and the task application server, and operation logs of the client terminals to trace a person and an operation related to information leakage using the collected logs.

Abstract: A method of manufacturing a wheel support bearing assembly having a plastically deformed portion engageable with an inclined surface portion of an annular stepped area in the inner race segment. The method includes that the plastically deformed portion, which is of a cylindrical configuration before it is deformed, is formed by pressing a crimping punch, of which front end portion outer peripheral surface is a tapered shape, axially into an inner peripheral surface of the inboard end portion of the hub axle to allow the cylindrical plastically deformed portion to be crimped in the diameter expanded condition.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from the group consisting of an ammonium halide having a fluoroalkyl group, a betaine compound having a fluoroalkyl group, and an amine oxide compound having a fluoroalkyl group, and a method for producing a fine metal structure using the same.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

Abstract: There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure, contains a phosphate ester and/or a polyoxyalkylene ether phosphate ester, and the method for producing a fine metal structure, uses the same.

Abstract: A method for drying lumber in a short time with less use of energy. The method of drying lumber includes: enclosing lumber in a batch container having a pressure release valve; filling fluid into the batch container under pressure; maintaining a temperature and a pressure at or above a critical point of the fluid for a certain period of time; and then opening the pressure release valve of the batch container to reduce the internal pressure to atmospheric pressure.

Abstract: Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminium (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it. The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).

Abstract: A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.

Abstract: To provide a wheel support bearing assembly, in which the sufficient proof strength of an inner race during assemblage onto the vehicle body can be secured without its function being lowered, the wheel support bearing assembly includes an outer member, an inner member, and rows of rolling elements interposed therebetween. The inner member includes an hub axle having a flange and an inner race on an inner race mount, with raceways defined in the hub axle and the inner race. The inner race has a counterbore at its inboard end. The hub axle has a plastically deformed portion which engages an axially oriented surface of the counterbore when radially outwardly crimped and does not protrude outwardly beyond an inboard end face of the inner race. The difference P between the inner race mount and an outer peripheral face of the plastically deformed portion is 0.13 mm or more.

Abstract: A game apparatus being one example of an information processing apparatus includes a CPU. The CPU detects a coordinate position designated on a monitor screen on the basis of a signal from a controller to be operated by a user, detects a barycentric position of the user on the basis of a signal from a load controller on which the user rides, and performs processing in relation to a test on a balance function and progress of the game on the basis of the detected coordinate position and the detected barycentric position.

Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.

Abstract: A composition for removing a residue from a wiring board containing an oxidizing agent and an azole compound and having a pH of from 1 to 7 and a cleaning method of a wiring board for removing a residue after dry etching by using this composition are provided. By using the composition for removing a residue of the present invention, in manufacturing a wiring board, residues remaining after dry etching which are derived from a resist or metals can be effectively removed without corroding titanium or titanium alloys with high corrosiveness. In particular, a semiconductor device using a wiring board containing titanium or titanium alloys can be efficiently manufactured.