Patents by Inventor Hiroshi Nakajima

Hiroshi Nakajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Data input method and data input device
    Publication number: 20040054819
    Abstract: When a user inputs data to a device having a plurality of data input units such as a text data input unit, e.g., a keyboard, a screen or the like and a voice data input unit, e.g., a microphone or the like, an optimal input method is automatically selected and provided to the user in accordance with an item of the data to be inputted by the user. A data input method selects an optimal input unit for the user from the text data input unit and the voice data input unit to control a data input operation in accordance with information such as the type of an item of data to be inputted, a data amount, an ambient noise state, a recognition result at the time of inputting data with voice, and the like.
    Type: Application
    Filed: July 17, 2003
    Publication date: March 18, 2004
    Inventors: Hiroshi Daimoto, Hirohide Ushida, Hiroshi Nakajima, Masahiko Hosono, Tatsuya Ishikawa
  • Connecting structure of air duct of vehicular air conditioning unit
    Publication number: 20040046424
    Abstract: In a connecting structure of an air duct of a vehicular air conditioning unit, an end of the air duct is engaged with an air conditioning case when an instrument panel is mounted on a vehicle body with the air duct. Therefore, a sealing member such as packing is not required between the connecting portions of the end of the air duct and an air outlet port of the case.
    Type: Application
    Filed: September 5, 2003
    Publication date: March 11, 2004
    Inventor: Hiroshi Nakajima
  • Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof
    Patent number: 6686611
    Abstract: In a nitride semiconductor of BpAlqGarInsN (0≦p≦1, 0≦q≦1, 0≦r≦1, 0≦s≦1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1×1019 cm−3 or more. This makes it possible to obtain a high carrier concentration at room temperature.
    Type: Grant
    Filed: March 8, 2002
    Date of Patent: February 3, 2004
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Hiroshi Nakajima, Fumihiko Nakamura
  • Voice recognition system, device, voice recognition method and voice recognition program
    Publication number: 20040010409
    Abstract: There are provided a voice recognition system, a device, a voice recognition method, a voice recognition program and a computer-readable recording medium in which the audio recognition program is recorded in order to be able to implement at least one of audio recognition above vocabulary processed by one device and retention of appropriate vocabulary stored in one device. Audio data received by a client are recognized by an audio recognition engine and when its recognition result is rejected, the audio data is transmitted to a server and the recognition result in the server is transmitted to the client. The client updates a recognition dictionary according to the number of recognitions and integrates the recognition results in a result integration part. The client may be used instead of the server.
    Type: Application
    Filed: April 1, 2003
    Publication date: January 15, 2004
    Inventors: Hirohide Ushida, Hiroshi Nakajima, Hiroshi Daimoto, Tsutomu Ishida
  • Methods of differentiating dementing diseases
    Publication number: 20030190678
    Abstract: The present invention relates to methods for differentiating demential diseases comprising measuring the concentration of human lipocalin-type prostaglandin D synthase in a sample of a body fluid collected from a subject and kits for differentiating demential diseases comprising an antibody specific to human lipocalin-type prostaglandin D synthase.
    Type: Application
    Filed: January 21, 2003
    Publication date: October 9, 2003
    Inventors: Mitsuhito Mase, Hiroya Nakau, Takashi Inui, Naomi Eguchi, Yoshihiro Urade, Kosuke Seiki, Hiroshi Oda, Hiroshi Nakajima, Nobuyuki Sato
  • Dialog system and dialog control system
    Publication number: 20030182129
    Abstract: It is an object to carry out an operation in a voice by using a voice recognition, a contact input, a voice output and a screen display together by means of a terminal having a low performance. A dialog system is constituted to have a voice device (3) for transmitting voice information, a screen device (8) for transmitting screen information and a dialog control device (7) for transmitting/receiving information to/from the devices (3) and (8). The devices (3), (7) and (8) are connected to a public circuit switched network (1) and a network (4), respectively. A voice terminal (2) is connected to the circuit (1) and a screen terminal (5) is connected to the network (4) so that a communication can be carried out between the terminal (2) and the device (3) and between the terminal (5) and the device (8), and the mutual communication of the devices (3) and (8) is controlled by the dialog control device (7).
    Type: Application
    Filed: March 14, 2003
    Publication date: September 25, 2003
    Inventors: Hirohide Ushida, Hiroshi Nakajima, Hiroshi Daimoto
  • Surface defect tester
    Patent number: 6617603
    Abstract: An image of a scanning position on a faceplate on a light receiving region defined by an arrangement of n light receiving elements such that an amount of light received by the light receiving region becomes a peak at a center of the light receiving region in an arranging direction of the light receiving elements and is gradually reduced substantially symmetrically toward both ends thereof in the same direction. Therefore, if there is no defect in the surface of the faceplate, levels of light receiving signals of the light receiving elements arranged substantially symmetrically in position on both sides of the light receiving region with respect to the center thereof as a reference are substantially equal and there is no substantial difference therebetween.
    Type: Grant
    Filed: March 1, 2002
    Date of Patent: September 9, 2003
    Assignee: Hitachi Electronics Engineering Co., Ltd.
    Inventors: Takayuki Ishiguro, Hiroshi Nakajima
  • Heavy wall steel material having superior weldability and method for producing the same
    Publication number: 20030145917
    Abstract: A tough high strength heavy wall steel material having superior weldability is provided, said steel material has a diameter or a side 5 mm or more in length, and comprises oxides 1 &mgr;m or less in particle diameter homogeneously dispersed at a dispersion density in a range of from 10,000 to 100,000 particles/mm2 and uniform ferrite grains 2 &mgr;m or less in grain diameter formed over the entire plane making a right angle with respect to the rolling direction.
    Type: Application
    Filed: February 28, 2003
    Publication date: August 7, 2003
    Inventors: Hiroshi Nakajima, Shiro Torizuka, Kaneaki Tsuzaki, Kotobu Nagai
  • Semiconductor light emitting device
    Patent number: 6603147
    Abstract: A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer is made of two or more semiconductor layers different in band gap, and a part of the p-type cladding layer near one of its boundaries nearer to the active layer is made of a semiconductor layer having a large band gap than that of the remainder part. More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer is made of a p-type Alx1Ga1−x1N layer in contact with a p-type GaN optical guide layer, and a p-type Alx2Ga1−x2N layer overlying the p-type Alx1Ga1−x1N layer (where 0≦x2<x1≦1).
    Type: Grant
    Filed: June 2, 2000
    Date of Patent: August 5, 2003
    Assignee: Sony Corporation
    Inventors: Shigeki Hashimoto, Katsunori Yanashima, Masao Ikeda, Hiroshi Nakajima
  • Nitrde semiconductor element and production method thereof
    Publication number: 20030139037
    Abstract: Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15).
    Type: Application
    Filed: November 19, 2002
    Publication date: July 24, 2003
    Inventors: Toshimasa Kobayashi, Katsunori Yanashima, Takashi Yamaguchi, Hiroshi Nakajima
  • Borehole tool actuating mechanism
    Patent number: 6588542
    Abstract: A borehole tool including a tool body having and an anchoring mechanism, the anchoring mechanism having a drive mechanism including a motor, drive shaft, and clutch; an anchor arm moveable between first and second positions relative to the tool body; a push rod connecting the anchor arm to the drive mechanism; and a spring acting to bias the arm into a first position relative to the tool body. The push rod extends through the clutch mechanism and is engaged by the spring to bias the arm into the first position, and is also driven by the drive mechanism through the clutch to move the arm between the first and second position. The push rod may be connected to the anchor arm by a link. Measurement devices may be used to determine the position of the anchor arm or the tool body.
    Type: Grant
    Filed: April 20, 2001
    Date of Patent: July 8, 2003
    Assignee: Schlumberger Technology Corporation
    Inventors: Hiroshi Nakajima, Tatsuki Endo
  • Nitride semiconductor growing process
    Publication number: 20030038302
    Abstract: A process of growing a nitride semiconductor on a crystalline nitride semiconductor substrate is disclosed, which is carried out by heating the substrate and initiating supply of source gases onto a surface of the substrate before the substrate temperature exceeds 1200° C., to initiate growth of the nitride semiconductor on the substrate. The nitride semiconductor growth is initiated after the substrate temperature has reached 300° C., and also after supply of a nitrogen source gas has been initiated and before the substrate temperature exceeds 1200° C.
    Type: Application
    Filed: August 12, 2002
    Publication date: February 27, 2003
    Inventors: Katsunori Yanashima, Hiroshi Nakajima
  • Ball bearing
    Patent number: 6513983
    Abstract: A ball bearing comprises an inner ring, an outer ring and a plurality of balls disposed between inner and outer rings. The number of the balls is made to be not smaller than 10. Lubricant is also enclosed between the inner and outer rings in such a manner that the amount of the lubricant is regulated not more than 8% of the volume of a space between the inner and outer rings.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: February 4, 2003
    Assignee: NSK Ltd.
    Inventors: Katsuhiko Tanaka, Keisuke Kimura, Kazuhiro Uemura, Shoji Noguchi, Hiroshi Nakajima, Toru Takamizawa
  • Lithium secondary battery
    Publication number: 20020192559
    Abstract: A first lithium secondary battery of the present invention is formed by placing at least a positive electrode, a negative electrode, and a non-aqueous electrolyte in a battery case in which a positive electrode connecting member to which the positive electrode is connected and a negative electrode connecting member to which the negative electrode is connected are electrically separated, wherein said positive electrode connecting member is composed of clad material comprising one of aluminum or aluminum alloy and one of austenitic stainless steel or ferrite stainless steel, and the aluminum or aluminum alloy in the clad material is in the positive electrode side.
    Type: Application
    Filed: January 9, 2002
    Publication date: December 19, 2002
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Seiji Yoshimura, Hiroshi Nakajima, Maruo Kamino
  • Optical system for detecting surface defects and disk tester and disk testing method utilizing the same optical system
    Publication number: 20020180959
    Abstract: A defect detecting optical system includes a light receiving optical system including an objective lens provided above the surface of the disk in parallel to the surface for receiving the scattered light and focusing an image of a test region of the disk on the light sensor through the objective lens and a plurality (n) of light illuminating systems provided around the objective lens equiangularly in a plane parallel to the disk with an angular interval of substantially 360°/n and emitting light beams to the test region with elevation angles in a range from 55° to 60° measured from the surface of the disk, where n is an integer equal to or larger than 3.
    Type: Application
    Filed: May 23, 2002
    Publication date: December 5, 2002
    Inventors: Hiroshi Nakajima, Takayuki Ishiguro
  • Lithium battery
    Publication number: 20020172864
    Abstract: In a lithium battery comprising a positive electrode for which manganese dioxide is employed, manganese dioxide containing 0.1 to 3% by weight of boron is employed as the positive electrode and a lithium alloy containing 0.05 to 2% by weight of aluminum is employed as the negative electrode.
    Type: Application
    Filed: March 1, 2002
    Publication date: November 21, 2002
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Seiji Yoshimura, Hiroshi Nakajima, Maruo Kamino
  • Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements
    Patent number: 6475820
    Abstract: The present invention provides a method for growing a semiconductor layer by which the size of generable voids is controllable, inclination of the c-axis of the semiconductor crystal is avoidable and the defects in the semiconductor layer is reducible, in which a first semiconductor layer typically made of GaN is formed in a ridge pattern on a substrate, and a second semiconductor layer typically comprising GaN is then formed on the first semiconductor layer under a condition by which the growth rate in the direction parallel to the major plane of the substrate is larger than that in the direction perpendicular thereto, which is attainable by controlling the pressure in a reaction chamber in which the vapor-phase growth proceeds at 53,200 Pa (400 Torr) or above, to allow the side planes of the second semiconductor layer incline at an acute angle to the bottom plane thereof.
    Type: Grant
    Filed: June 15, 2001
    Date of Patent: November 5, 2002
    Assignee: Sony Corporation
    Inventors: Hiroshi Nakajima, Shigeki Hashimoto, Tsunenori Asatsuma
  • Surface defect tester
    Publication number: 20020125449
    Abstract: An image of a scanning position on a faceplate on a light receiving region defined by an arrangement of n light receiving elements such that an amount of light received by the light receiving region becomes a peak at a center of the light receiving region in an arranging direction of the light receiving elements and is gradually reduced substantially symmetrically toward both ends thereof in the same direction. Therefore, if there is no defect in the surface of the faceplate, levels of light receiving signals of the light receiving elements arranged substantially symmetrically in position on both sides of the light receiving region with respect to the center thereof as a reference are substantially equal and there is no substantial difference therebetween.
    Type: Application
    Filed: March 1, 2002
    Publication date: September 12, 2002
    Inventors: Takayuki Ishiguro, Hiroshi Nakajima
  • Gelled polymer electrolyte lithium secondary cell
    Patent number: 6444369
    Abstract: The battery of this invention includes a positive electrode including a gelled polymeric electrolyte (A) and using spinel type lithium manganese oxide as an active material; a negative electrode; a gelled polymeric electrolyte (B) in the shape of a film or sheet also serving as a separator, and both the gelled polymeric electrolyte (A) and the gelled polymeric electrolyte (B) are made from a polymer of poly(alkylene oxide) series impregnated with a liquid electrolyte. Since the battery includes the positive electrode using the specific gelled polymeric electrolyte (A), a contact area between the positive electrode active material and the gelled polymeric electrolyte is large, so as to attain large initial discharge capacity (at high rate discharge in particular).
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: September 3, 2002
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Maruo Kamino, Ryuji Ohshita, Hiroshi Nakajima, Makoto Uesugi, Toshiyuki Nohma, Koji Nishio
  • Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof
    Patent number: 6429032
    Abstract: In a nitride semiconductor of BpAlqGarInsN (0≦p≦1, 0≦q≦1, 0≦r≦1, 0≦s≦1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1×1019 cm−3 or more. This makes it possible to obtain a high carrier concentration at room temperature.
    Type: Grant
    Filed: January 11, 2000
    Date of Patent: August 6, 2002
    Assignee: Sony Corporation
    Inventors: Hiroyuki Okuyama, Hiroshi Nakajima, Fumihiko Nakamura