Abstract: The radiography apparatus of the present invention includes a CPU 71 having a function of a lighting time limitation means to control the lighting time of light sources in such a way as to maintain a temperature at or below a predetermined temperature. In order to discriminate the type of light source connected to the device body, the setting of No. 5 pin on the CPU 71 to a high logic state or a low logic state is detected. This enables the detection of whether the light source connected to a control board 70 is a halogen lamp H or a light emitting diode (LED) L. Thus, the type of the light source is discriminated. The CPU 71 changes the controlled limiting lighting time based on the result of discrimination. This prevents the risk of incorrectly carrying out settings and enables the automatic setting for switching light sources.

Abstract: A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

Abstract: A titanium oxide compound according to the present invention comprises bronze-type titanium oxide or titanium oxide mainly composed of bronze-type titanium oxide, and contains calcium and/or silicon. The titanium oxide compound contains 0.005 to 2.5 mass % inclusive of calcium or 0.15 to 0.55 mass % inclusive of silicon, or contains 0.005 to 1.2 mass % inclusive of calcium and 0.15 to 0.2 mass % inclusive of silicon, or contains 0.005 to 0.1 mass % inclusive of calcium and 0.15 to 0.5 mass % inclusive of silicon.

Abstract: An X-ray diagnostic device has an attachment-and-detachment detection element that detects an attachment-and-detachment of the attachment-and-detachment member, a rotation detection element that detects the rotation of the motor, a torque adjustment element that adjusts the torque of the motor, and a torque detection element that detects the torque when the rotation of the motor suspends; wherein when attachment-and-detachment is detected, the brake is released; when the brake is released, the rotation of the motor due to an out of balance condition between the up-and-down moving element and the counterweight is detected and the motor torques is adjusted so as to suspend the detected rotation of the motor; the torque when the rotation of the motor suspends is continuously provided, so that the balance between the up-and-down moving element and the counterweight can be kept positioned.

Abstract: A mobile X-ray imaging apparatus has an angle sensor and a movement calculation circuit that controls the driving of drive wheels based on the turning angle of auxiliary wheels relative to a straight moving direction of the base unit when a fine movement switch instructs movement of the base unit in the fine movement mode. The turning angle of auxiliary wheels is detected by a turning angle sensor and the rotation of the pair of drive wheels is controlled by the movement calculation circuit as the auxiliary wheels turns to the straight moving direction.

Abstract: A metal-resin composite structure (106) is obtained by bonding a metal member (103) and a resin member (105) formed of a thermoplastic resin composition (P) to each other. Regarding six linear portions in total on a surface (110) of the metal member (103) including three arbitrary linear portions which are parallel to each other and another three arbitrary linear portions which are perpendicular to the former three linear portions, a surface roughness measured according to JIS B0601 (corresponding international standard: ISO4287) satisfies the following requirements (1) and (2) at the same time: (1) material ratio of the roughness profile (Rmr) of one or more linear portions at a cutting level of 20% and an evaluation length of 4 mm are lower than or equal to 30%; and (2) ten point average roughnesses (Rz) of all the linear portions at an evaluation length of 4 mm are greater than 2 ?m.

Abstract: A titanium oxide compound according to the present invention comprises bronze-type titanium oxide or titanium oxide mainly composed of bronze-type titanium oxide, and contains calcium and/or silicon. The titanium oxide compound contains 0.005 to 2.5 mass % inclusive of calcium or 0.15 to 0.55 mass % inclusive of silicon, or contains 0.005 to 1.2 mass % inclusive of calcium and 0.15 to 0.2 mass % inclusive of silicon, or contains 0.005 to 0.1 mass % inclusive of calcium and 0.15 to 0.5 mass % inclusive of silicon.

Abstract: A manufacturing method of a metal/resin composite structure of the invention is a manufacturing method for manufacturing a metal/resin composite structure obtained by bonding a steel member and a thermoplastic resin member formed of a thermoplastic resin or a resin composition including the thermoplastic resin, to each other, the method comprising.

Abstract: In a touch panel in which a sensor electrode array, frame wiring set that is located outside the sensor electrode array and connected to the sensor electrode array, and a first outer ground wiring line located outside the frame wiring set are formed on a transparent substrate of the touch panel, shielding wiring covering the frame wiring set is provided, with an insulating layer placed between the frame wiring set and the shielding wiring, and a second outer ground wiring line is provided outside the shielding wiring. The shielding wiring is connected to a ground wiring line included in the frame wiring set through a hole formed in the insulating layer and is insulated from the second outer ground wiring line.

Abstract: A method of manufacturing a semiconductor device forming a pad on the semiconductor substrate. A rewiring is formed that is electrically connected to the pad and led to a region outside the pad. A resin layer is formed on the rewiring. An external terminal is electrically connected to the rewiring via the resin layer. The resin layer is formed so as to enter the inside of a slit formed in a region along the periphery of the external terminal in the rewiring.

Abstract: A method of manufacturing a semiconductor device forming a pad on the semiconductor substrate. A rewiring is formed that is electrically connected to the pad and led to a region outside the pad. A resin layer is formed on the rewiring. An external terminal is electrically connected to the rewiring via the resin layer. The resin layer is formed so as to enter the inside of a slit formed in a region along the periphery of the external terminal in the rewiring.

Abstract: In a complex of the invention, a resin member made of a resin material including a polyolefin and a metal member are joined together through a primer layer. In addition, the resin member is obtained by molding the resin material by injection, a coexistence layer in which a primer resin material configuring the primer layer and the resin material coexist is formed between the primer layer and the resin member, and a thickness of the coexistence layer is in a range of more than or equal to 5 nm and less than or equal to 50 nm.

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate, a pad formed on the semiconductor substrate, a rewiring that is electrically connected to the pad and led to a region outside the pad, a resin layer formed on the rewiring, and an external terminal electrically connected to the rewiring via the resin layer, and the resin layer is formed so as to enter the inside of a slit formed in a region along the periphery of the external terminal in the rewiring.

Abstract: In a touch panel in which a sensor electrode array, frame wiring set that is located outside the sensor electrode array and connected to the sensor electrode array, and a first outer ground wiring line located outside the frame wiring set are formed on a transparent substrate of the touch panel, shielding wiring covering the frame wiring set is provided, with an insulating layer placed between the frame wiring set and the shielding wiring, and a second outer ground wiring line is provided outside the shielding wiring. The shielding wiring is connected to a ground wiring line included in the frame wiring set through a hole formed in the insulating layer and is insulated from the second outer ground wiring line.

Abstract: A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

Abstract: A semiconductor device suitable for preventing malfunction is provided. The semiconductor device includes a semiconductor chip 1, a first electrode pad 21 laminated on the semiconductor chip 1, an intermediate layer 4 having a rectangular shape defined by first edges 49a and second edges, and a plurality of bumps 5 arranged to sandwich the intermediate layer 4 by cooperating with the semiconductor chip 1. The first edges 49a extend in the direction x, whereas the second edges extend in the direction y. The plurality of bumps 5 include a first bump 51 electrically connected to the first electrode pad 21 and a second bump 52 electrically connected to the first electrode pad 21. The first bump 51 is arranged at one end in the direction x and one end in the direction y.

Abstract: A storage battery includes a terminal portion for storage batteries having a plurality of bolt insertion holes bored in one or a plurality of directions, a nut insertion opening through which a nut is inserted, a hollow in communication with the bolt insertion holes and the nut insertion opening and the nut having at least one screw hole threaded in a direction coincident with at least one or the plurality of directions. A fixation portion is formed to fix the nut by deforming the terminal portion with the nut being inserted through the nut insertion opening into the hollow and the at least one screw hole of the nut being in communication respectively with the at least one of the plurality of bolt insertion holes.

Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Abstract: A metal/resin composite structure (106) of the invention is formed by bonding a metal member (103) and a resin member (105) to each other. A concavo-convex shape satisfying the following characteristics (i) and (ii) is formed on a bonding surface (104) of the metal member (103) to be bonded to the resin member (105). (i) A mean width of the profile elements (RSm) is equal to or greater than 150 ?m and equal to or smaller than 1500 ?m and a maximum height roughness (Rz) is equal to or greater than 170 ?m and equal to or smaller than 800 ?m (ii) A mean width of the profile elements (RSm) is equal to or greater than 100 nm and equal to or smaller than 10000 nm and a maximum height roughness (Rz) is equal to or greater than 100 nm and equal to or smaller than 10000 nm.

Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.