Abstract: Systems including and methods for forming a backplane for an electronic display are presented. The backplane includes interlaced crystallized regions, and the interlaced crystallized regions include at least a left column of crystallized regions and a right column of crystallized regions. The left and right columns include rows of crystallized regions with gaps disposed between each of the rows. Furthermore, each crystallized region in the left column extends into a corresponding gap in the right column, and each crystallized region in the right column extends into a corresponding gap in the left column.

Abstract: Provide is a portable image display device which allows a user to perform many different operation inputs with ease. The portable image display device includes: a display screen having a substantially rectangular shape; and a plurality of touch sensors provided along at least two sides defining a circumference of the display screen, for each detecting a position touched by a finger of a user. The portable image display device changes an image displayed on the display screen in accordance with a combination of the positions of a plurality of the fingers which are respectively detected by the plurality of touch sensors.

Abstract: Provided is a controller device capable of performing various operation inputs to an information processor via an attachment despite the attachment not being provided with an electrical circuit. The controller device includes a core unit having a touch sensor disposed on a surface thereof, and an attachment that is attached to the core unit so as to cover the touch sensor. The attachment is provided with an operation member that is configured so as to be able to contact the touch sensor in a state where the attachment is attached to the core unit, the contact mode with respect to the touch sensor changing in accordance with user operation.

Abstract: A block tool, which can be assembled by a user, is configured with multiple types of blocks and is shot by a camera for capturing a still image or a moving image. The position coordinates of a marker of the square-pillar block in a three-dimensional space are obtained by image recognition. Also, a connecting position and the type of each block, a gradient vector of the square-pillar block, an angle between two blocks constituting the square-pillar block, and the respective blocks' lengths are obtained so as to derive the shape, posture, and position of the block tool, and corresponding information processing is then performed.

Abstract: An obstacle detecting unit detects an obstacle for a user wearing a head mounted display from an image of the outside world. A distance calculating unit calculates the distance from a detected obstacle to the user wearing the head mounted display. An obstacle replacing unit replaces the detected obstacle with a virtual object. A virtual object synthesizing unit generates a virtual object at a position within a virtual space displayed on the head mounted display, in which the position is determined according to the distance to the obstacle.

Abstract: The present invention provides a measurement apparatus which measures a measurement surface based on an interference signal obtained by causing measurement light reflected by the measurement surface and reference light reflected by a reference surface to interfere with each other, the apparatus including an interference optical system including a lens for focusing the measurement light to be incident on the measurement surface, and configured to cause the measurement light and the reference light to interfere with each other, and an adjusting device configured to adjust a focusing state of the measurement light focused by the lens such that a measurement point on the measurement surface positions within a range of a depth of focus of the lens, wherein the interference signal is obtained with the focusing state adjusted by the adjusting device.

Abstract: There is provided an operation device that can be stably operated without taking up a lot of space when tilted by a user during the operation. The operation device includes: a support part (12) formed to be pressable against a supporting object in a state in which the user is holding the operation device; a pressing detection part (13) for detecting a state in which the support part (12) is pressed against the supporting object; and a tilt detection part for detecting a tilt of the operation device. The user changes the tilt of the operation device in a state in which the support part (12) is pressed against the supporting object to thereby implement the operation with respect to a connection apparatus.

Abstract: The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film.

Abstract: Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film (15) including a dopant is laminated on a p-type semiconductor layer (14) of a gallium nitride-based compound semiconductor device (1). The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film (15).

Abstract: Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer 14 of a gallium nitride-based compound semiconductor device 1. The transparent conductive oxide film 15 is subjected to a laser annealing process using a laser after the lamination of the transparent conductive oxide film 15.

Abstract: Provided is a calibration apparatus, including: a holder for fixing an electronic device; a first motor for rotating the holder with a first rotation axis as a center; a second motor for rotating the holder with a second rotation axis perpendicular to the first rotation axis as a center; and a stopper for restricting a rotational position of the holder about the second rotation axis to a range between a reference position and a perpendicular position reached by rotating the holder by 90 degrees from the reference position, in which the first motor rotates the holder to which the electronic device is fixed at a predetermined speed in each of states in which the rotational position of the holder about the second rotation axis falls in the reference position and in which the rotational position of the holder about the second rotation axis falls in the perpendicular position.

Abstract: There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element (1) which includes an n-type semiconductor layer (12), a light emission layer (13), a p-type semiconductor layer (14), and a titanium oxide-based conductive film layer (15), laminated in order on one face of a substrate (11), wherein a first oxide containing an element that is any one of In, Al, and Ga and a second oxide containing either Zn or Sn are present between the p-type semiconductor layer (14) and the titanium oxide-based conductive film layer (15), and the mass ratio of the second oxide to the total of the first oxide and the second oxide is in a range of 1 to 20 mass %.

Abstract: The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H2).

Abstract: The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

Abstract: The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate 11; an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15 that are composed of gallium nitride based compound semiconductors and formed on the substrate 11 in this order; a transparent positive electrode 16 that is formed on the p-type semiconductor layer 15; a positive electrode bonding pad 17 that is formed on the transparent positive electrode 16; a negative electrode bonding pad 18 that is formed on the n-type semiconductor layer 13; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surface 16a of the transparent positive electrode 16.

Abstract: Provide is a portable image display device which allows a user to perform many different operation inputs with ease. The portable image display device includes: a display screen having a substantially rectangular shape; and a plurality of touch sensors provided along at least two sides defining a circumference of the display screen, for each detecting a position touched by a finger of a user. The portable image display device changes an image displayed on the display screen in accordance with a combination of the positions of a plurality of the fingers which are respectively detected by the plurality of touch sensors.

Abstract: There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer 12, a light-emitting layer 13, a p-type semiconductor layer 14, and a titanium oxide-based conductive film layer 15 laminated in this order, wherein a random concavo-convex surface 15 is formed on at least a part of the surface of the titanium oxide-based conductive film layer.

Abstract: A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

Abstract: Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer.