Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

Abstract: Provided is a head-mounted video presentation device which has a visible light wavelength conversion and is designed for a user having degraded sensitivity to a first wavelength band as a part of a visible light wavelength band as compared with a second wavelength band as the remaining part of the visible light wavelength band.

Abstract: A sensor protector configured including a mount, a plate shaped cover, and an electromagnetic wave shield is provided. The mount is mounted at a bracket configured to fix a sensor, provided at an inner side of a bumper cover, to a body of a vehicle. The plate shaped cover that extends from a lower portion of the mount toward the bumper cover with an end portion of the cover, at an outer side in a vehicle front-rear direction ,separated from the bumper cover, and covers a lower portion of the sensor as viewed from a lower side of the vehicle. The electromagnetic wave shield is provided to at least a portion of the cover.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Abstract: A method of adjusting a sensitivity parameter value for substrate defect inspection used in a substrate defect inspection apparatus compares, for each pixel value of a selected virtual inspection substrate, using reference pixel data to be used after adjustment, the deviation amount from an allowable range corresponding to the position thereof and the sensitivity parameter value before the adjustment when each pixel value is deviated from the allowable range, and updates the deviation amount as a new sensitivity parameter value when the deviation amount exceeds the sensitivity parameter value and a difference between the deviation amount and the sensitivity parameter value is equal to or less than a threshold value.

Abstract: A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

Abstract: A method for adjusting a chemical liquid supply device of supplying a chemical liquid through a nozzle for removing a coating film on a peripheral portion of a substrate having the coating film formed on a surface thereof and horizontally held by a holding table is provided. The method includes discharging the chemical liquid from the nozzle, performing, by an image pickup part, continuous image pickup on a region including a leading end of the nozzle and a region in which the chemical liquid discharged from the leading end forms a liquid stream in the air, acquiring area change data representing a temporal change in area of the chemical liquid in an image pickup region based on an image pickup result obtained by the image pickup part, and adjusting a supply control device installed in a chemical liquid supply path connected to the nozzle based on the area change data.

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.

Abstract: In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing a second liquid into the first liquid, and bringing the first metallic film or a second metallic film different from the first metallic film into contact with a liquid in which the first liquid and the second liquid are mixed together to etch the first or second metallic film. The first liquid includes an oxidizing agent, a complexing agent, and water (H2O) of a first content rate to etch the first metallic film. The second liquid includes water (H2O) at a second content rate higher than the first content rate after the etching has started.

Abstract: A reactor includes a coil body, an exterior case, and a filler. The coil body includes a core and a coil wound around the core. The exterior case includes a metal structure and a resin frame. The metal structure has a bottom surface and a side wall provided to stand upright from the bottom surface. The bottom surface and the side wall of the metal structure are unitarily formed with each other. The frame is disposed at an opposite side to the bottom surface of the metal structure. The exterior case houses the core and the coil. The filler is filled between the exterior case and the coil body.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: A method of adjusting a sensitivity parameter value for substrate defect inspection used in a substrate defect inspection apparatus compares, for each pixel value of a selected virtual inspection substrate, using reference pixel data to be used after adjustment, the deviation amount from an allowable range corresponding to the position thereof and the sensitivity parameter value before the adjustment when each pixel value is deviated from the allowable range, and updates the deviation amount as a new sensitivity parameter value when the deviation amount exceeds the sensitivity parameter value and a difference between the deviation amount and the sensitivity parameter value is equal to or less than a threshold value.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: An edge exposure apparatus includes: an imaging unit that images a front surface of a substrate; a substrate holding unit; an exposure unit that exposes an edge portion of the substrate held on the substrate holding unit; a first moving mechanism that moves and rotates the substrate holding unit; a second moving mechanism that moves the exposure unit; and a control unit that controls the first moving mechanism and the second moving mechanism, wherein the first moving mechanism and the second moving mechanism are controlled so as to acquire array information of shots of a pattern on the substrate from a substrate image of a substrate, which has already been subjected to pattern exposure, imaged by the imaging unit, and expose the edge portion of the substrate, based on the acquired array information.

Abstract: According to one embodiment, a semiconductor device includes a stacked body, a semiconductor body, and a stacked film. The stacked body includes a plurality of tungsten layers and a plurality of alloy layers of tungsten and molybdenum. At least portions of the tungsten layers are stacked with an air gap interposed. The alloy layers are provided on surfaces of the tungsten layers opposing the air gap. The semiconductor body extends in a stacking direction through the stacked body. The stacked film is provided between the semiconductor body and the tungsten layers. The stacked film includes a charge storage portion.