Abstract: A film formation system for continuously forming metal films with desired thickness on the surfaces of substrates, and increase the film forming speed while suppressing abnormality of the metal films. A film formation system includes an anode; a solid electrolyte membrane between the anode and a substrate serving as a cathode such that a metal ion solution is disposed on the anode side thereof; and a power supply portion for applying a voltage across the anode and the substrate. A voltage is applied across the anode and the substrate o deposit metal out of the metal ions contained in the solid electrolyte membrane onto the substrate surface, thereby forming a metal film made of the metal ions. The anode has a base material, which is insoluble in the metal ion solution, and a metal plating film made of the same metal as the metal film, formed over the base material.

Abstract: A method of manufacturing a semiconductor device includes: arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and melting and solidifying the solder material to form Cu6Sn5 on the surface of the nickel layer using tin of the solder material and the copper layer.

Abstract: A method of forming a wiring pattern includes: a) forming a metal underlayer including a first underlying wiring layer which is in contact with an electrode, a second underlying wiring layer which is not in contact with the electrode, and an underlying connection layer which connects the first underlying wiring layer to the second underlying wiring layer; b) forming a metal plating layer on the metal underlayer through electroplating; and c) removing a metal connection portion through etching. The metal connection portion is the underlying connection layer covered with the metal plating layer. The etching includes bringing a solid electrolyte material that contains a solution into which metal of the metal connection portion is dissolved, into contact with the metal connection portion and applying a voltage between the metal connection portion and the solid electrolyte material.

Abstract: Provided is film formation apparatus of a metal film and a film formation method therefor capable of forming a homogeneous metal film of a uniform thickness stably, while being less affected by the surface state of the anode. A film formation apparatus 1A includes: an anode 11; a solid electrolyte membrane 13 disposed between the anode 11 and a base B serving as a cathode; and a power supply unit 14 to apply voltage between the anode 11 and the base B, the film formation apparatus being configured so that, when the solid electrolyte membrane 13 is brought into contact with a surface of the base B, and voltage is applied between the anode 11 and the base B, metal is deposited on the surface of the base B from metal ions included inside of the solid electrolyte membrane 13, so that the metal film F made of the metal is formed.

Abstract: A film forming apparatus includes: an anode; a solid electrolyte membrane that is arranged between the anode and an substrate that serves as a cathode, and that contains metal ions; a power supply that applies a voltage between the anode and the substrate in a state in which the solid electrolyte membrane is in contact with the substrate from above; and an oscillating portion configured to oscillate at least the anode in the state in which the solid electrolyte membrane is in contact with the substrate.

Abstract: A coating forming device for forming a metal coating on a surface of a substrate includes: an anode; a power supply; and a solid electrolyte membrane disposed between the anode and the substrate and contains metal ions. The solid electrolyte membrane includes: a contact surface that is a region contacting a coating-forming region where the metal coating is formed; and a concave portion recessed relative to the contact surface such that, when the contact surface contacts the coating-forming region, the solid electrolyte membrane is not in contact with a portion of the surface of the substrate excluding the coating-forming region. The metal ions are reduced to form the metal coating on the coating-forming region by the power supply applying a voltage between the anode and the substrate.

Abstract: Provided is a nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. Specifically, provided is a nickel solution for forming a film, the nickel solution being adapted to, when disposing a solid electrolyte membrane between an anode and a substrate that functions as a cathode, bringing the solid electrolyte membrane into contact with the substrate and applying a voltage across the anode and the substrate so as to deposit nickel onto a surface of the substrate from nickel ions contained in the solid electrolyte membrane, thereby forming a nickel film containing the nickel on the surface of the substrate, supply the nickel ions to the solid electrolyte membrane. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1.

Abstract: A solid electrolyte membrane (13) is arranged on a surface of an anode (11) between the anode (11) and a substrate (B) that serves as a cathode. The solid electrolyte membrane (13) is brought into contact with the substrate (B). At the same time, a metal film (F) is formed on the surface of the substrate (B) by causing metal to precipitate onto the surface of the substrate (B) from metal ions through application of voltage between the anode (11) and the substrate (B) in a first contact state where the solid electrolyte membrane (13) contacts the substrate (B). The metal ions are contained inside the solid electrolyte membrane (13).

Abstract: A film deposition device (1A) of a metal film (F) includes a positive electrode (11), a solid electrolyte membrane (13), and a power supply part (14) that applies a voltage between the positive electrode (11) and a base material (B) to be a negative electrode. The solid electrolyte membrane (13) allows a water content to be 15% by mass or more and is capable of containing a metal ion. The power supply part (14) applies a voltage between the positive electrode and the base material in a state where the solid electrolyte membrane is disposed on a surface of the positive electrode such that metal made of metal ions contained inside the solid electrolyte membrane (13) is precipitated on a surface of the base material (B).

Abstract: A metal-film forming apparatus includes: an anode; a resin substrate having a surface on which a conductor pattern layer that serves as a cathode is formed; a solid electrolyte membrane that contains metal ions and is between the anode and the resin substrate, the solid electrolyte membrane contacting a surface of the conductor pattern layer when a metal film is formed; a power supply; and a conductive member that is arranged contacting the conductor pattern layer when the metal film is formed, such that a negative electrode of the power supply is electrically connected to the conductor pattern layer, the conductive member being detachable from the conductor pattern layer, wherein the metal ions are reduced to deposit metal that forms the metal film on the surface of the conductor pattern layer when the voltage is applied.

Abstract: Provided is a metal coating film formation device capable of forming a film using a simple device configuration and in a short time, and capable of performing the formation of a film of metal coating continuously for a long period. A film formation device 1A is provided with an anode 11, a solid electrolyte film 13 disposed between the anode 11 and the base material B, and a power supply unit 16 that applies a voltage between the anode 11 and the base material B. The anode 11 is a non-porous anode comprising the same metal as the metal of the metal coating. Between the anode 11 and the solid electrolyte film 13, a porous material 14 is disposed in contact with the anode 11 and the solid electrolyte film 13. The porous material 14 includes a plurality of pores providing communication between the anode 11 and the solid electrolyte film 13 and being supplied with a metal solution L.

Abstract: A film deposition device (1A) of a metal film includes: a solid electrolyte membrane (13) that allows metal ions to be contained; a positive electrode (11) made of a porous body; a power supply part (14) that applies a voltage between the positive electrode and a base material; and a contact pressurization part (20) that comes into contact with the positive electrode (11) and uniformly pressurizes a film deposition region of a surface of the base material by the solid electrolyte membrane (13) via the positive electrode (11). The positive electrode (11) made of the porous body is capable of transmitting a solution containing the metal ions such that the metal ions are supplied to the solid electrolyte membrane. The power supply part (14) applies a voltage between the positive electrode and the base material so that the metal film made of the metal is deposited.

Abstract: A surface treatment method includes: roughening a surface region of a substrate corresponding to a through hole provided to a masking plate by supplying a solvent to a solid electrolyte film from a second surface of a masking plate through the through hole, in a state where: a first surface of the solid electrolyte film is arranged directly on the surface of the substrate; and a first surface of the masking plate is arranged directly on a second surface of the solid electrolyte film, wherein the supplied solvent penetrates the solid electrolyte film, and dissolves the surface of the substrate.

Abstract: A method of manufacturing a semiconductor device includes: arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and melting and solidifying the solder material to form Cu6Sn5 on the surface of the nickel layer using tin of the solder material and the copper layer.

Abstract: A film formation system for continuously forming metal films with desired thickness on the surfaces of substrates, and increase the film forming speed while suppressing abnormality of the metal films. A film formation system includes an anode; a solid electrolyte membrane between the anode and a substrate serving as a cathode such that a metal ion solution is disposed on the anode side thereof; and a power supply portion for applying a voltage across the anode and the substrate. A voltage is applied across the anode and the substrate o deposit metal out of the metal ions contained in the solid electrolyte membrane onto the substrate surface, thereby forming a metal film made of the metal ions. The anode has a base material, which is insoluble in the metal ion solution, and a metal plating film made of the same metal as the metal film, formed over the base material.

Abstract: A film-forming metal solution for supplying metal ions to a solid electrolyte membrane in film formation is provided. In the film formation, the solid electrolyte membrane is disposed between an anode and a substrate as a cathode, and the solid electrolyte membrane is brought into contact with the substrate and a voltage is placed between the anode and the substrate to precipitate a metal on a surface of the substrate from the metal ions contained in the solid electrolyte membrane, so that a metal film of the metal is formed on the surface of the substrate. The film-forming metal solution contains a solvent, and the metal dissolved in the solvent in an ionic state. A hydrogen ion concentration of the film-forming metal solution is within a range of 0 to 10?7.85 mol/L at 25° C.

Abstract: A decorative coating (10) that is formed on a surface of a resin substrate F that is placed on a path an electromagnetic waves of a radar device, and the decorative coating (10) is composed of a layer (2) in which metal nanoparticles (1) are covered with an inorganic oxide material.

Abstract: Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between. the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed, The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.

Abstract: The present invention relates to a method of fabricating an insulating resin material (4) from a core/shell particle (3) having a core particle (2) containing a macromolecular compound and a shell layer (1) coating the core particle (2) and containing an inorganic compound. The method of fabrication includes mixing the core/shell particles (3) with a good solvent (10) for the macromolecular compound, infiltrating the good solvent (10) through the shell layer (1), impregnating the good solvent (10) into the macromolecular compound, molding a compact from the impregnated core/shell particles (3), and removing the good solvent from the compact by heating the molded compact.

Abstract: A decorative coating (10) that is formed on a surface of a resin substrate F that is placed on a path an electromagnetic waves of a radar device, and the decorative coating (10) is composed of a layer (2) in which metal nanoparticles (1) are covered with an inorganic oxide material.