Abstract: The method for regenerating a carbonyl sulfide (COS) hydrolysis catalyst according to the present invention is a method for regenerating a Ba/TiO2 based carbonyl sulfide (COS) hydrolysis catalyst by hydrolyzing COS which is contained in a gas obtained by gasifying a carbon raw material, wherein a spent COS hydrolysis catalyst is washed with water, dried, immersed in an aqueous solution of a barium salt for a prescribed amount of time, dried, and calcined so as to re-support the active component on the surface of the COS hydrolysis catalyst, thus enabling the regeneration of the COS hydrolysis catalyst.

Abstract: [Problems] Prior art technology has a problem in that when a plant is cultivated for a long period of time on a polyvinyl alcohol (PVA) film having its lower surface positioned in contact with a nutrient fluid, plant roots that have formed penetrate through the film. [Means to solve the problems] A plant cultivation system wherein the PVA film has an equilibrium degree of swelling in the range of from 125 to 250% as measured in water at 30° C. and has a loss tangent (tan ?) in the range of from 0.005 to 0.2 as measured in an equilibrium swollen state in water at 30° C., and a method for cultivating a plant by using this plant cultivation system. [Industrial applicability] Plant cultivation can be performed for a long period of time while avoiding infection by bacteria and the like causative of plant diseases. Therefore, the present invention is useful in, e.g., agriculture and the manufacture of pharmaceuticals.

Abstract: A method for regenerating a carbonyl sulfide (COS) hydrolysis catalyst for hydrolyzing COS which is contained in a gas obtained by gasifying a carbon material, wherein a spent COS hydrolysis catalyst is immersed in an acid solution for a prescribed time thereby removing poisoning substances adhering to the surface of the COS hydrolysis catalyst; and thus regenerating the COS hydrolysis catalyst.

Abstract: The method for regenerating a carbonyl sulfide (COS) hydrolysis catalyst according to the present invention is a method for regenerating a Ba/TiO2 based carbonyl sulfide (COS) hydrolysis catalyst by hydrolyzing COS which is contained in a gas obtained by gasifying a carbon raw material, wherein a spent COS hydrolysis catalyst is washed with water, dried, immersed in an aqueous solution of a barium salt for a prescribed amount of time, dried, and calcined so as to re-support the active component on the surface of the COS hydrolysis catalyst, thus enabling the regeneration of the COS hydrolysis catalyst.

Abstract: A thin-film semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film above the substrate; forming an amorphous film (amorphous silicon film) above the substrate; forming a crystalline film (crystalline silicon film) including a first crystal and a second crystal, by crystallizing the amorphous film, the first crystal (i) containing subgrains formed with different crystal orientations in a single crystal and (ii) including a subgrain boundary formed by plural crystal planes between the subgrains, the second crystal having an average crystal grain size smaller than an average crystal grain size of the first crystal; thinning the crystalline film; and forming a source electrode and a drain electrode above the substrate.

Abstract: A medical image exchange system connects a transmission system to an image relay server. The medical image exchange system includes a device configured to input a transmission destination of image data and select image data, in response to a request from the in-hospital terminal. The medical image exchange system includes a device configured to generate an image relay form including relay information on the transmission destination and information for identifying the selected image data. The image relay server transmits a request to acquire the image to the transmission system based on the image relay form. The image transmission system acquires the image in response to the acquisition request, and transmits the image to the image relay server.

Abstract: A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.

Abstract: An electronic component package has a first sealing member main surface with mounted electronic element, and a second sealing member. An outer circumference portion of a second sealing member is molded into a tapered shape, providing a tapered area in at least part of the outer circumference. A flat area adjacent to the tapered area is provided in at least part of a flat portion inward of the outer circumference portion of the surface of the second sealing member. A first area corresponding to the tapered area and a second area corresponding to the flat area are provided adjacent to each other on a first main surface of the first sealing member with mounted electronic component element. A width W2 of the second area is 0.66 to 1.2 times a width W4 of the flat area. First and second bonding layers are formed and bonded with each other by heating.

Abstract: A thin-film semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film above the substrate; forming an amorphous film (amorphous silicon film) above the substrate; forming a crystalline film (crystalline silicon film) including a first crystal and a second crystal, by crystallizing the amorphous film, the first crystal (i) containing subgrains formed with different crystal orientations in a single crystal and (ii) including a subgrain boundary formed by plural crystal planes between the subgrains, the second crystal having an average crystal grain size smaller than an average crystal grain size of the first crystal; thinning the crystalline film; and forming a source electrode and a drain electrode above the substrate.

Abstract: A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.

Abstract: A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Abstract: A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.

Abstract: To provide a system for producing safe and high nutrition vegetables at low cost. A plant cultivation system for cultivating a plant on a nonporous hydrophilic film, which comprises a nonporous hydrophilic film and a feeding means for supplying water or a nutrient fluid to the lower surface of the film in the absence of a hydroponic tank for accommodating water or a nutrient fluid and cultivating a plant therein. As the feeding means, use is made of a water absorbing material which is in contact with the film and which is disposed between the film and a water impermeable material. A system for producing safe and high nutrition vegetables at low cost can be obtained by disposing the water impermeable material directly on ground soil, whereupon the water absorbing material and an irrigation tube are disposed, followed by disposing the film thereon.

Abstract: A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.

Abstract: A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Abstract: [Problems] To provide a system for producing safe and high nutrition vegetables at low cost. [Means to solve the problems] A plant cultivation system for cultivating a plant on a nonporous hydrophilic film, which comprises a nonporous hydrophilic film and a feeding means for supplying water or a nutrient fluid to the lower surface of the film in the absence of a hydroponic tank for accommodating water or a nutrient fluid and cultivating a plant therein. As the feeding means, use is made of a water absorbing material which is in contact with the film and which is disposed between the film and a water impermeable material. A system for producing safe and high nutrition vegetables at low cost can be obtained by disposing the water impermeable material directly on ground soil, whereupon the water absorbing material and an irrigation tube are disposed, followed by disposing the film thereon.

Abstract: A fluid supply nozzle includes a fluid flow-in section into which a fluid flows in, a reservoir section for storing the fluid, a flow velocity control wall provided between the fluid flow-in section and the reservoir section and including an orifice for making the fluid flow in the reservoir section while reducing a flow velocity, and a discharging section including a slit for discharging the fluid with pressure of the fluid applied to the reservoir section. A substrate processing apparatus is formed so as to include the fluid supply nozzle. Moreover, a substrate processing method includes the step of discharging a fluid in a single-layered, continuous film to supply the fluid onto a substrate. Thus, the substrate is processed. To perform this method, the fluid supply nozzle of the present invention can be used.

Abstract: A rotary encoder includes a shaft which serves as a rotation axis, a disc supporting plate fixed to the shaft, an encoder disc having a center hole, a first side face, and a second side face opposing the first side face, an elastic member contacting and pressing the second side face of the encoder disc, and a retaining member retaining the second side face of the encoder disc via the elastic member. The first side face is contacted with a surface of the disc supporting plate. The shaft is inserted into the hole. A belt conveyance apparatus includes an endless belt, a roller configured to rotate the endless belt, including a shaft and the rotary encoder. The rotary encoder is provided on the shaft of the roller. An electrophotographic image forming apparatus includes an image forming unit and the belt conveyance apparatus.

Abstract: A process for forming a resist pattern according to the invention is a process for forming a resist pattern in which a photoresist is coated on a first substrate, the coated photoresist is exposed to light of a predetermined pattern, and afterwards developing is performed, wherein in at least one of the processes of coating, exposing, and developing, whenever lots to which the first substrate belongs change, the atmosphere residing in the lot is changed.

Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.