Abstract: A travel controller detects a non-lane zone within a predetermined distance ahead of a current position of a vehicle. The non-lane zone lacks lanes. The travel controller controls travel of the vehicle in the non-lane zone so as to keep the position of the vehicle relative to the width of a whole road. When an expected position of the vehicle at the end of the non-lane zone straddles a lane line, the travel controller controls travel of the vehicle so as to move to a lane having a larger overlap with the vehicle, prior to control of travel of the vehicle to keep the position of the vehicle relative to the width of the whole road.

Abstract: A route selection device includes a processor configured to identify a position of a lane on which a vehicle is traveling; search for candidate partial routes leading from a current position of the vehicle to a waypoint on a route leading from a start point to a destination, the waypoint being located between the current position and the destination; determine a lane change location where a lane change will be made for each of the candidate partial routes found by searching; and select, as a partial route, a candidate partial route having a minimum total score regarding the lane change location from the candidate partial routes found by searching. The score is weighted depending on the position of the determined lane change location or whether a lane change at the lane change location can be controlled by a travel controller.

Abstract: A semiconductor wafer evaluation method includes acquiring a reflection image as a bright-field image by receiving reflected light which is obtained when irradiating one surface side of a semiconductor wafer to be evaluated with light; acquiring a scattered image as a dark-field image by receiving scattered light which is obtained when irradiating the surface side of the semiconductor wafer with light; and obtaining a distance between a bright zone that is observed in the reflection image and a bright zone that is observed in the scattered image. The semiconductor wafer to be evaluated is a semiconductor wafer in which a chamfered surface is formed in a wafer outer peripheral edge section, and the method includes evaluating a shape of a boundary part between a main surface on the surface side irradiated with the light of the semiconductor wafer to be evaluated and a chamfered surface adjacent to the main surface.

Abstract: A tongue (7) includes a plate (20) having a longitudinal portion (21) that is insertable into a buckle (8), and a broader portion (22) that is located on an opposite side from a tip end (24) of the longitudinal portion (21) and is formed wider than the longitudinal portion (21). The broader portion (22) is covered at least in part. The broader portion (22) has a base (23) that is connected to the longitudinal portion (21), a beam (25) that extends in a long-side direction of the broader portion (22), a connecting portion (39) that connects the base (23) to the beam (25), and a through hole (71) that is defined by the base (23), the beam (25), and the connecting portion (39) and through which a seat belt is inserted. An edge, located at the side portion (35, 36) of the beam (25) forming the through hole (71), is subjected to a beveling press or is chamfered. The edge faces one side of the seat belt (4) passing through the through hole to a shoulder anchor (6).

Abstract: A vehicle seat includes an ISOFIX anchor for fixing a child seat which is provided in a through-hole that extends in a front and rear direction and is formed in a seat body. The vehicle seat further includes: a cover member which covers an opening on a seat front side of the through-hole in an openable and closable manner; and a plug member which is capable of being pushed into the opening on the seat front side of the through-hole in a drawable manner, wherein the plug member is configured to block an air-flowing channel of an air which flows in from an opening on a seat back side of the through-hole and flows out from the opening on the seat front side of the through-hole in a state where the plug member is pushed into the opening.

Abstract: A vehicle seat includes: a cover member that covers an ISOFIX anchor for fixing a child seat; an intermediate portion that is exposed at a position between the cover member and the ISOFIX anchor in a state where the cover member is opened; and a stopper that retains the cover member in a state where the cover member is opened, wherein the stopper has an engagement part and an abutting part, wherein the engagement part of the stopper is detachably engaged with at least one of the rear surface and the intermediate portion in a state where the cover member is opened, and wherein the abutting part of the stopper abuts on the other of the rear surface and the intermediate portion so as to prevent the cover member from being moved in a closing direction.

Abstract: A vehicle seat includes: a cover member that covers an ISOFIX anchor for fixing a child seat; an intermediate portion that is exposed at a position between the cover member and the ISOFIX anchor in a state where the cover member is opened; and a stopper that retains the cover member in a state where the cover member is opened, wherein the stopper has an engagement part and an abutting part, wherein the engagement part of the stopper is detachably engaged with at least one of the rear surface and the intermediate portion in a state where the cover member is opened, and wherein the abutting part of the stopper abuts on the other of the rear surface and the intermediate portion so as to prevent the cover member from being moved in a closing direction.

Abstract: A vehicle seat includes an ISOFIX anchor for fixing a child seat which is provided in a through-hole that extends in a front and rear direction and is formed in a seat body. The vehicle seat further includes: a cover member which covers an opening on a seat front side of the through-hole in an openable and closable manner; and a plug member which is capable of being pushed into the opening on the seat front side of the through-hole in a drawable manner, wherein the plug member is configured to block an air-flowing channel of an air which flows in from an opening on a seat back side of the through-hole and flows out from the opening on the seat front side of the through-hole in a state where the plug member is pushed into the opening.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.

Abstract: To provide a book binding kit easy for a user to fabricate an original book, it includes one set composed of a paper having a printing surface and an adhesive surface to which a release paper having a cut line to form a cover member is attached, a front cover paperboard to be attached to a front cover region of the adhesive surface, a backbone paperboard to be attached to a backbone region of the adhesive surface, a back cover paperboard to be attached to a back cover region of the adhesive surface, and a body of pages made of a plurality of sheets bound together at one end. The release paper is divided into a front cover release paper, a front cover groove release paper, a backbone release paper, a back cover groove release paper, a back cover release paper, and a flap release paper.

Abstract: A metallic ring 45 molded by punching a copper plate having hooks 43, etc., and a carbon member 46 are brazed to each other by a brazing material having a higher melting point than the temperature for connecting a coil to conductive members 52, that is, a brazing material containing, for example, nickel and chromium. Next, resin is filled up inside the metallic ring 45 and carbon member 46 to form a resin substrate 48. Next, slits 50 are formed at the metallic ring 45 and the carbon member 46 in the radial direction, so that generally fan-shaped segments 51 insulated from each other and conductive members 52 are formed. Next, a coil is connected to hooks 43 of the conductive members 52 by soldering, welding, etc.

Abstract: A metallic ring 45 molded by punching a copper plate having hooks 43, etc., and a carbon member 46 are brazed to each other by a brazing material having a higher melting point than the temperature for connecting a coil to conductive members 52, that is, a brazing material containing, for example, nickel and chromium. Next, resin is filled up inside the metallic ring 45 and carbon member 46 to form a resin substrate 48. Next, slits 50 are formed at the metallic ring 45 and the carbon member 46 in the radial direction, so that generally fan-shaped segments 51 insulated from each other and conductive members 52 are formed. Next, a coil is connected to hooks 43 of the conductive members 52 by soldering, welding, etc.

Abstract: Disclosed is a book-like disc casing which comprises a series of a front cover, a spine and a rear cover, made of cardboard, and a plurality of pieces of paper, the front cover, spine and rear cover being folded to be like a book with the pieces of paper interleaved between the front cover and the rear cover. At least one of the front and rear covers has an intermediate member and a lining member laid on each other to form a lamination inside. The intermediate member has a disc accommodating space formed therein, and the lining member has a line of perforations and creases intercepting the line of perforations, which is partly in conformity with the disc accommodating space, thereby facilitating the making of an opening in the lining member to permit the taking-out of the disc from the disc accommodating space.

Abstract: A sinter-joining method for forming a sinter of high quality at low cost and a sintered composite member produced by the sinter-joining method.A tubular copper-base material is forced into a tubular iron-base material and these materials are sintered at temperatures equal to and higher than 600.degree. C. so that the copper-base material expands and pressure-joins to the iron-base material. Then, the materials are sintered at temperatures equal to and higher than 850.degree. C. so that the compactness of the copper-base material is increased. Through these steps, the sintered composite member containing the copper-base material joined to the inside of the iron-base material is obtained.

Abstract: A method of direct-bonding semiconductor wafers limits the time interval between a bonding step and a bonding anneal step or performs a baking step between the bonding and bonding anneal steps at a predetermined temperature for a predetermined time interval to prevent the formulation of voids on the edge regions of the wafers. The method for fabricating laminated semiconductor wafers includes a bonding step to fit together two polished semiconductor wafers by bonding jigs, and a succeeding bonding anneal step to laminate the wafers. In the method the bonding anneal step is preferably carried out within an hour following the bonding step; or a baking step at a predetermined temperature for a predetermined time interval is carried out between the bonding step and the bonding anneal step. Further, the method can prevent heavy metal impurities attached to the surface of the wafer from diffusing into the wafer by baking the wafer for over 5 minutes at above 100.degree. C.