Abstract: There is provided a laminate including: a support substrate; a semiconductor substrate having a bump on a side of the support substrate; an inorganic material layer interposed between the support substrate and the semiconductor substrate and in contact with the semiconductor substrate; and an adhesive layer interposed between the support substrate and the inorganic material layer and in contact with the support substrate and the inorganic material layer, in which the laminate is used for an application in which the support substrate and the semiconductor substrate are separated from each other after processing of the semiconductor substrate in the laminate, and an adhesive force between the inorganic material layer and the adhesive layer when the support substrate and the semiconductor substrate are separated from each other is smaller than an adhesive force between the inorganic material layer and the semiconductor substrate.

Abstract: The laminate of the invention has a semiconductor substrate, a support substrate, a release layer disposed so as to come into contact with the semiconductor substrate, and an adhesive layer disposed between the support substrate and the release layer, characterized in that the release layer is a film formed from a releasing agent composition containing a polyorganosiloxane component essentially containing polydimethylsiloxane; the polyorganosiloxane component has a viscosity of 5.50 × 103 Pa·s to 0.75 × 103 Pa·s, as measured at 25° C.; and the film has a thickness of 0.01 µm to 4.90 µm.

Abstract: A laminate having a semiconductor substrate, a support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate, wherein the release layer is a film formed from a releasing agent composition containing an organic resin, a branched-chain polysilane, and a solvent.

Abstract: A laminate having a semiconductor substrate, a UV-ray-transmissive support substrate, and an adhesive layer and a release layer disposed between the semiconductor substrate and the support substrate. The release layer is a film formed from a releasing agent composition containing a polymer of an ethylenic unsaturated monomer having a tert-butoxycarbonyl group, a photoacid generator, and a solvent.

Abstract: A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (wherein each of L1 and L2 represents a C2 to C4 alkyl group, and L3 represents O or S) in an amount of 80 mass % or more.

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

Abstract: The invention provides a laminate having a first substrate formed of a semiconductor substrate; a second substrate formed of a light-transmissive support substrate; and an adhesive layer and a release layer disposed between the first substrate and the second substrate, characterized in that the release layer is a film formed from a releasing agent composition containing a polynuclear phenol derivative represented by formula (P) (wherein Ar represents an arylene group), a cross-linking agent, and at least one of an acid generator and an acid.

Abstract: A composition for forming a resist underlayer film which enables to form a flat film with a favorable coating even on a so-called stepped substrate and a small film thickness difference after embedding, and also a polymer as an important component of the composition for forming a resist underlayer film, a resist underlayer film formed using the composition for forming a resist underlayer film, and a method of producing a semiconductor device. The composition for forming a resist underlayer film, includes a compound of the following Formula (1) and a solvent: (wherein, Ar1, Ar2, Ar3 and Ar4 are each independently a substitutable monovalent aromatic hydrocarbon group, a, b, c, and d are each 0 or 1, and a+b+c+d=1).

Abstract: The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L1 and L2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L1 and that of the alkyl group L2 is 6 or less) in an amount of 80 mass % or more.

Abstract: A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

Abstract: The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, characterized in that the remover composition contains a solvent but no salt; the solvent includes one or more species selected from among an aliphatic hydrocarbon compound, an aromatic hydrocarbon compound, an ether compound, a thioether compound, an ester compound, and an amine compound, each having a molecular weight less than 160; and the remover composition exhibits a contact angle smaller than 31.5° with respect to the adhesive layer.

Abstract: The invention provides a cleaning agent composition for use in removing an adhesive residue, characterized in that the composition contains a quaternary ammonium salt, a metal corrosion inhibitor, and an organic solvent, and the metal corrosion inhibitor is formed of a C7 to C40 saturated aliphatic hydrocarbon compound monocarboxylic acid, a C7 to C40 saturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride, a C7 to C40 unsaturated aliphatic hydrocarbon compound monocarboxylic acid, or a C7 to C40 unsaturated aliphatic hydrocarbon compound dicarboxylic acid or anhydride.

Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: The invention provides an adhesive composition containing an adhesive component (S) and a release component (H) formed of a polyorganosiloxane having a complex viscosity of 3,400 (Pa·S) or higher.

Abstract: A composition for forming a resist underlayer film exhibits strong etching resistance, has a good dry etching rate ratio and a good optical constant, and is capable of forming a film that provides good coverage over a so-called multilevel substrate and that is flat with reduced difference in thickness after embedding. A resist underlayer film uses said composition for forming a resist underlayer film; and a method for producing a semiconductor device. The composition for forming a resist underlayer film contains: a polymer having the partial structure represented by formula (1); and a solvent. (In the formula, Ar represents an optionally substituted C6-20 aromatic group.

Abstract: A resist underlayer film forming composition contains a reaction product of an aromatic compound (A) having 6 to 60 carbon atoms and a compound represented by formula (B), and a solvent. (In the formula, X represent an oxygen atom or a nitrogen atom; Y represents a single bond, an oxygen atom or a nitrogen atom; X and Y may combine with each other to form a ring; and each of R1, R2, R3 and R4 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cyclic alkyl group having 3 to 8 carbon atoms or an aromatic group having 6 to 10 carbon atoms; provided that R2 is present only in cases where X is a nitrogen atom, and R4 is present only in cases where Y is a nitrogen atom.

Abstract: A resist underlayer film forming composition wherein a flat film forms exhibiting high etching resistance, a good dry etching rate ratio and optical constant, has good coverage, and a small difference in film thickness after embedding. Also included are a resist underlayer film using the resist underlayer film forming composition; and a method for producing a semiconductor apparatus. This resist underlayer film forming composition includes: at least one compound of formula (A); at least one polymer of formula (B); and a solvent. (In formula (A), X represents a C2-C50 n-valent organic group, and n Y's represent a C6-C60 aromatic hydrocarbon group having at least one hydroxyl group, n represents an integer of 1-4.) [In formula (B), R1 represents a hydrogen atom or methyl group, and R2 represents at least one group from formulae (B-1) to (B-3). (In formulae (B-1) to (B-3), * represents a bond with an adjacent oxygen atom.