Abstract: There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

Abstract: There is provided a composition for forming a novel resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film comprising a copolymer having a structural unit of the following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent. (wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1?(b+c)?5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Abstract: The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.

Abstract: There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

Abstract: A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a fourth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

Abstract: A resist underlayer film-forming composition containing a copolymer having a structural unit of Formula (1) and a structural unit of Formula (2), a cross-linkable compound, a cross-linking catalyst, and a solvent. wherein A is a divalent organic group containing a triazine ring, X1 is an —S— group or an —O— group, Q is a linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 15, the hydrocarbon group may have at least one sulfur atom or oxygen atom in a main chain and at least one hydroxy group as a substituent, n is 0 or 1, R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is a divalent group having at least one sulfur atom or oxygen atom, and when X1 is an —O— group, Z is a divalent group having at least one sulfur atom.

Abstract: A resist underlayer film-forming composition containing a copolymer having a structural unit of Formula (1) and a structural unit of Formula (2), a cross-linkable compound, a cross-linking catalyst, and a solvent. wherein A is a divalent organic group containing a triazine ring, X1 is an —S— group or an —O— group, Q is a linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 15, the hydrocarbon group may have at least one sulfur atom or oxygen atom in a main chain and at least one hydroxy group as a substituent, n is 0 or 1, R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is a divalent group having at least one sulfur atom or oxygen atom, and when X1 is an —O— group, Z is a divalent group having at least one sulfur atom.

Abstract: There is provided a resist underlayer film-forming composition having excellent solubility in a solvent containing propylene glycol monomethyl ether as a main component. A resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1a) or Formula (1c) and a structural unit of Formula (1b) and a solvent containing more than 50% by mass of propylene glycol monomethyl ether, wherein in the polymer, the structural unit of Formula (1a) or Formula (1c) and the structural unit of Formula (1b) are arranged alternately. (In Formulae (1a) and (1b), Q is a phenylene group or a naphthylene group, m is 1 or 2, and each of n is independently 0 or 1).

Abstract: A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

Abstract: There is provided a resist underlayer film-forming composition having excellent solubility in a solvent containing propylene glycol monomethyl ether as a main component. A resist underlayer film-forming composition comprising a polymer having a structural unit of Formula (1a) or Formula (1c) and a structural unit of Formula (1b) and a solvent containing more than 50% by mass of propylene glycol monomethyl ether, wherein in the polymer, the structural unit of Formula (1a) or Formula (1c) and the structural unit of Formula (1b) are arranged alternately. (In Formulae (1a) and (1b), Q is a phenylene group or a naphthylene group, m is 1 or 2, and each of n is independently 0 or 1.

Abstract: A chair is provided with a base 6 fixed at an upper end of a leg pillar 5, a back support unit 13 attached to the base 6 so as to tilt backward, a backrest 3 attached to the back support unit 13, and a spring unit 14 supporting the backward tilt of the back support unit 13. The spring unit 14 is to expand and contract in a back and forth direction when viewed from above and arranged further behind than a tilt supporting point 16a of the back support unit 13. The back support unit 13, the spring unit 14, and the base 6 constitute a kind of link mechanism and the spring unit 14 will expand and contract mainly at the front end, while tilting backward.

Abstract: A chair is provided with a base 6 fixed at an upper end of a leg pillar 5, a back support unit 13 attached to the base 6 so as to tilt backward, a backrest 3 attached to the back support unit 13, and a spring unit 14 supporting the backward tilt of the back support unit 13. The spring unit 14 is to expand and contract in a back and forth direction when viewed from above and arranged further behind than a tilt supporting point 16a of the back support unit 13. The back support unit 13, the spring unit 14, and the base 6 constitute a kind of link mechanism and the spring unit 14 will expand and contract mainly at the front end, while tilting backward.