Abstract: A composition for forming a resist underlayer film includes: (A) a cross-linking compound that is represented by formula (I); and (D) a solvent. [In formula (I), m is an integer from 1 to 30, T is a single bond, a saturated hydrocarbon group, an aromatic group, or an unsaturated cyclic hydrocarbon group, G1, G2, G3, G4, G5, and G6 are each independently (i) or (ii), the n's are each independently an integer from 1 to 8, the n R's are each independently a hydrogen atom, an aliphatic hydrocarbon group, or an alicyclic hydrocarbon group, the A's are each independently an aryl group that may be interrupted by an alkylene group, and Z1, Z2, Z3, Z4, Z5, and Z6 are each independently an alkyl group, an aryl group, a hydroxy group, an epoxy group, or a hydrogen atom.

Abstract: A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent: (in Formulae (1) and (2), R1 is a functional group of Formula (3); in Formula (3), Q1 and Q2 are each independently a hydrogen atom or a C1-5 alkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), X1 is a C1-50 organic group, and i and j are each independently 0 or 1).

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Abstract: A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3?1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.

Abstract: A resist underlayer film-forming composition including: a resin having a repeating structural unit including at least one —C(?O)—O— group in a main chain and a repeating structural unit including at least one hydroxy group in a side chain, or including at least one —C(?O)—O— group in a main chain and at least one hydroxy group in a side chain, wherein none of these units have an organic group containing an epoxy or oxetane ring; an acid catalyst or salt thereof in an amount of 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, when the catalyst is a monovalent acid, an acid dissociation constant pKa is ?0.5 or less in 25° C. water, or when a multivalent acid, an acid dissociation constant pKa1 is ?0.5 or less in 25° C. water; and a solvent, wherein the composition does not include a monomer crosslinking agent.

Abstract: The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R1-R4 represents a C2-C10 alkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C1-C5 alkoxyethyl groups, C1-C5 alkylsulfanyl groups and organic groups containing an ester bond, or a C2-C10 alkenyl group; the R1-R4 moieties may be the same as or different from each other; and each of R5 and R6 represents a hydrogen atom or a group selected from among C1-C10 alkyl groups and a phenyl group.

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X1 is a substituent reacting with the crosslinker, R0 is a direct bond or a C1-2 alkylene group, X2 is a C1-2 alkyl group, C1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1?(b+c)?5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Abstract: A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

Abstract: A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.

Abstract: A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group.

Abstract: A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Abstract: A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.

Abstract: A resist underlayer film forming composition contains a resin containing a unit structure represented by formula (1): [in formula (1), R1 represents a thiadiazole group which is optionally substituted with a C1-6 alkyl group optionally interrupted by a carboxy group, a C1-6 alkyl group optionally substituted with a hydroxyl group, or a C1-4 alkylthio group, and R2 represents a hydrogen atom or formula (2): (in formula (2), R1 is the same as defined above, and * represents a binding moiety)]. The resist underlayer film forming composition provides a resist underlayer film which has excellent solvent resistance, excellent optical parameters, an excellent dry etching rate, and excellent embeddability.

Abstract: A novel resist underlayer film forming composition containing a compound has a hydantoin ring. A resist underlayer film forming composition has a compound having at least two substituents of the following formula (1): (wherein R1 and R2 are each independently a hydrogen atom or a methyl group, and X1 is a C1-3 hydroxyalkyl group or a C2-6 alkyl group having one or two ether bonds in a main chain) in the molecule, and a solvent.

Abstract: A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1a) or (1b): wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3?1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.

Abstract: A resist underlayer film-forming composition including a solvent and a copolymer including a structural unit of the following Formula (1): wherein X is a divalent chain hydrocarbon group having a carbon atom number of 2 to 10, and the divalent chain hydrocarbon group optionally has at least one sulfur atom or oxygen atom in a main chain, or optionally has at least one hydroxy group as a substituent; R is a chain hydrocarbon group having a carbon atom number of 1 to 10; and each n is 0 or 1.

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Abstract: A resist underlayer film-forming composition capable of providing a resist underlayer film exerting a sufficient anti-reflection function particularly in a KrF process, a high solvent resistance and a high dry etching speed, and enables the formation of a photoresist pattern having a good cross-sectional shape. The composition includes a copolymer containing: structural unit (A) derived from a diepoxy compound; and structural unit (B) derived from a compound represented by formula (1) [wherein: A represents a benzene or cyclohexane ring; X represents a hydrogen atom, alkyl or alkoxy group having 1 to 10 carbon atoms and optionally substituted by a halogen atom, or an alkoxycarbonyl group having 2 to 11 carbon atoms; and Y represents —COOH or -L-NHCO—Z—COOH (wherein: Z represents an alkylene group having 3 to 10 carbon atoms and optionally substituted by an oxygen atom, sulfur atom or nitrogen atom; and L represents a single bond or a spacer)].