Abstract: When a potential D of an output node is drawn out to the level of ground potential GND by an n channel pull-down output transistor, a pull-down gate control transistor is rendered conductive. The output node and the n channel pull-down output transistor conduct.

Abstract: A semiconductor integrated circuit device has an internal circuit node reset signal generation circuit for inverting an output signal with a predetermined time lag immediately after application of power. The internal circuit node reset generation circuit comprises an initial stage power on reset signal generation circuit, an initial stage signal transmission circuit for inputting a signal outputted by the initial stage power on reset signal generation circuit, a final stage power on reset signal generation circuit for inputting a signal outputted by the initial stage signal transmission circuit, and a final stage signal transmission circuit for inputting a signal outputted by the power on reset signal and outputting the output signal.

Abstract: A reference voltage generated in a Vref1 generating circuit is supplied from a corresponding applied voltage selector to respective backgates of access transistors in each SRAM cell constituting a column which is selected by a column decoder. On the other hand, a substrate voltage generated in a Vbb generating circuit is supplied from a corresponding applied voltage selector to respective backgates of access transistors in each SRAM cell constituting a column which is not selected by the column decoder.

Abstract: A synchronous semiconductor memory device includes a clock input circuit receiving an externally applied clock signal to produce an internal clock signal, a signal input circuit taking in an externally applied signal to produce an internal signal, a first delay circuit delaying an externally applied snooze mode signal by a first delay time for supplying to a clock input circuit, and a second delay circuit delaying the externally applied snooze mode signal by a second delay time for supplying to the signal input circuit. The clock input circuit and the signal input circuit are disabled when the internal snooze mode signal is active. The semiconductor memory device takes in the external signal and produces an internal signal in synchronization with the internal clock signal. Upon switching over to the snooze mode, the operation is performed in accordance with the external signal in the cycle in which the snooze mode is designated, and the internal operation is inhibited in the subsequent cycles.

Abstract: In the present invention, a row address processing circuit and a column address processing circuit operate in synchronism with an externally applied synchronous signal in a semiconductor memory device. The row address processing circuit and the column address processing circuit each include an address buffer and a decoder. The address buffer or decoder operates in synchronism with the synchronous signal.

Abstract: A level converting circuit has a function of converting an input signal of a first logic level into an output signal of a second logic level. The level converting circuit includes a first transistor responsive to an input signal IN for charging an output node to the ground potential, a second transistor responsive to the input signal IN for lowering the potential of the output node to the negative potential VEE, a third transistor responsive to the potential of the output node for controlling operations of the second transistor, and fourth and fifth transistors responsive to a delay signal with delay to an output of the level converting circuit for controlling the amount of current flowing through the output node. An inverted, amplified signal of the output node is applied to the gate of the fourth transistor, and a non-inverted, amplified signal of the output node is applied to the gate of the fifth transistor.