Abstract: A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, a failure analyzer 13 for analyzing a failure of the semiconductor device, and an analysis screen display controller 14 for letting a display device 40 display information about a result of the analysis. The failure analyzer 13 sets an analysis region with reference to the failure observed image P2, and extracts a net passing the analysis region, from a plurality of nets included in a layout of the semiconductor device. This substantializes a semiconductor failure analysis apparatus, analysis method, and analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device.

Abstract: Using a solid immersion lens (SIL) having a spherical lens surface with a radius of curvature RL from a material having a refractive index nL, an image of a sample is observed. A geometric aberration characteristic caused by the SIL is evaluated by using a predetermined optical system. Using a coefficient k (0<K<1) set to satisfy a condition where the average image surface becomes flat or a condition yielding a favorable chromatic aberration characteristic, the sample is observed with the solid immersion lens while a surface, orthogonal to the optical axis, including a point located downstream of the spherical center C of the lens surface 10 by k×(RL/nL) along the optical axis is employed as a sample observation surface 20. This realizes a sample observation method that can observe the image of the sample favorably with a solid immersion lens, and the solid immersion lens.

Abstract: An image pickup system is equipped with a cylindrical lens CL, which, for a light flux emitted from light source 1, converges only light flux components of a single direction within a section perpendicular to the direction of propagation of the light flux, an objective lens OL, on which the light flux emitted from cylindrical lens CL is made incident after the light flux has passed the convergence position of cylindrical lens CL, and a galvanomirror 3a, which is disposed along the optical path of the abovementioned light flux between cylindrical lens CL and objective lens OL. Light flux emitted from a sample S in accordance with the incidence of a slit-shaped light flux onto sample S is captured by a TV camera 7.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index n0 and a thickness t0 of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index n0 and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: The present invention relates to a laser beam inspection apparatus for inspecting a defect on a sample such as semiconductor integrated circuits by using a laser beam. The laser beam inspection apparatus irradiates a laser beam to a sample supplied with a constant current or applied by a constant voltage, and then detects indirectly a change in current or a change in electric field corresponding to a change in the value of resistance developed by scanning the laser beam along the surface of the sample. For example, the change in current is conducted indirectly in such a manner that a magnetic field detecting apparatus detects the change in the magnetic field caused by a current flowing the power supply line provided between a constant voltage source and a sample, and whereby it becomes possible to specify the defective area of the sample based on the detection of the change in the magnetic field.

Abstract: Using a solid immersion lens (SIL) 1 having a spherical lens surface 10 with a radius of curvature RL from a material having a refractive index nL, an image of a sample 2 is observed. In this sample observation, a geometric aberration characteristic caused by the SIL 1 is evaluated by using a predetermined optical system. Using a coefficient k (0<k<1) set so as to satisfy a condition where the average image surface becomes flat or a condition yielding a favorable chromatic aberration characteristic, the sample is observed with the solid immersion lens 1 while a surface, orthogonal to the optical axis Ax, including a point located downstream of the spherical center C of the lens surface 10 by k×(RL/nL) along the optical axis Ax is employed as a sample observation surface 20. This realizes a sample observation method which makes it possible to observe the image of the sample favorably with a solid immersion lens, and the solid immersion lens.

Abstract: Using a solid immersion lens (SIL) having a spherical lens surface with a radius of curvature RL from a material having a refractive index nL, an image of a sample is observed. A geometric aberration characteristic caused by the SIL is evaluated by using a predetermined optical system. Using a coefficient k (0>k>1) set to satisfy a condition where the average image surface becomes flat or a condition yielding a favorabl chromatic aberration characteristic, the sample is observed with the solid immersion lens while a surface, orthogonal to the optical axis, including a point located downstream of the spherical center c of the lens surface 10 by (k×(RL/nL) along the optical axis, is employed as a sample observation surface 20. This realizes a sample observation method that can observe the image of the sample favorably with a solid immersion lens, and the solid immersion lens.

Abstract: In a wavelength-variable light outputting apparatus, a diffraction grating 8 and a shielding member 11 which make wavelength and light quantity variable are attached to galvanometric scanners 12, 13, respectively, and the latter are swung, whereby the wavelength can be made variable at a high speed while in a state where the light quantity is kept constant. Such an apparatus is useful for capturing a fluorescent image of a biological sample in particular. By way of the shielding member 11, light is made incident on the optical fiber 10 and is outputted therefrom, whereby a biological sample SM can effectively be irradiated with light.

Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3.

Abstract: Pulse excitation light, emitted from a laser light source 10, is scanned in a first direction by a first scanning means 100, scanned in a second direction, perpendicular to the first direction, by a second scanning means 120, converged by an objective optical system 140, and illuminated onto sample 50. Fluorescences, emitted from sample 50, are output from objective optical system 140 to second scanning means 120, scanned in the second direction, perpendicular to the first direction, and output to a light separation means 110 by second scanning means 120, output from light separation means 110 to a streak camera, and recorded as variations of time of the fluorescence intensities by streak camera 30. Fluorescence lifetimes are calculated based on these variations with time of the fluorescence intensities and a fluorescence lifetime distribution image is prepared.

Abstract: An arrangement, equipped with a holder 9, which supports a solid immersion lens 3 in the gravity direction with the bottom surface of solid immersion lens 3 being protruded downward through an opening 9b, is provided. With this arrangement, when solid immersion lens 3 is set on an observed object, solid immersion lens 3 is put in a state in which it is raised by the observed object and is made free with respect to holder 9. Also in this state, an excessive pressure will not be applied to the observed object and yet solid immersion lens 3 is put in close contact in conformance with the observed object and temperature drifts at the holder 9 side or the observed object side are cut off from the counterpart side and thus the influences of such temperature drifts are eliminated. A solid immersion lens holder, with which the damaging of the observed object can be eliminated and which enables high-precision observation, is thus provided.

Abstract: Optical contact liquid containing an amphipathic molecule is dripped onto a semiconductor device which is a sample as an inspection object (S104), and a solid immersion lens is set thereon (S105). The inserted position of the solid immersion lens is then adjusted (S106). The optical contact liquid is then dried (S108), and thereby the solid immersion lens is brought into optically-close contact with the semiconductor device. As a result, a sample observation method and a microscope or the like can be realized, in which the solid immersion lens can be easily aligned to a desired position on the sample, and the solid immersion lens can be securely brought into optically-close contact with the sample.

Abstract: Using a solid immersion lens (SIL) 1 having a spherical lens surface 10 with a radius of curvature RL from a material having a refractive index nL, an image of a sample 2 is observed. In this sample observation, a geometric aberration characteristic caused by the SIL 1 is evaluated by using a predetermined optical system. Using a coefficient k (0<k<1) set so as to satisfy a condition where the average image surface becomes flat or a condition yielding a favorable chromatic aberration characteristic, the sample is observed with the solid immersion lens 1 while a surface, orthogonal to the optical axis Ax, including a point located downstream of the spherical center C of the lens surface 10 by k×(RL/nL) along the optical axis Ax is employed as a sample observation surface 20. This realizes a sample observation method which makes it possible to observe the image of the sample favorably with a solid immersion lens, and the solid immersion lens.

Abstract: For a semiconductor device S as a sample of an observed object, there are provided an image acquisition part 1 for carrying out observation of the semiconductor device S, and an optical system 2 comprising an objective lens 20. A solid immersion lens (SIL) 3 for magnifying an image of the semiconductor device S is arranged movable between an insertion position where the solid immersion lens includes an optical axis from the semiconductor device S to the objective lens 20 and is in close contact with a surface of the semiconductor device S, and a standby position off the optical axis. Then an image containing reflected light from SIL 3 is acquired with the SIL 3 at the insertion position, and the insertion position of SIL 3 is adjusted by SIL driver 30, with reference to the image.

Abstract: A semiconductor light amplifier device emits, from an exit end processed to yield no reflection, outgoing light with a light quantity corresponding to a driving signal input from a driving circuit. This outgoing light irradiates, by way of an optical system, an object to be measured; whereas the reflected light, scattered light, and diffracted light generated by the object trace back the optical system and are made incident on the exit end of the semiconductor light amplifier device in a feedback manner as return light. Accordingly, the light amplifier device performs optical amplification as the return light is incident thereon, thereby increasing the light quantity of the outgoing light. This change in light quantity of the outgoing light is detected by the light-receiving device and output therefrom as a light-receiving signal.